Daidousanso Co., Ltd.

Daido Hoxan Inc.

Yoshinori Ohmori

Akira Yoshino

Toshiharu Ohnishi

Kenji Okumura

Takashi Yokoyama

Kazuma Yamamoto

A method for processing semiconductor materials such as a crystalline ingot or a wafer and an apparatus employed therein. An etching gas is supplied on the surface of a semiconductor material, while laser irradiation or light quantum irradiation is applied on a predetermined part of the semiconductor material surface, whereby a component of the etching gas is excited, reacted with a component of the semiconductor material and evaporated for elimination. Thereby, semiconductor materials can be processed hygienically, easily and with high precision.

Method for processing semiconductor material

A reactant gas is fed to a dispersing chamber which is disposed under a reaction chamber, and both disposed within a vacuum chamber. The reactant gas is dispersed and then fed through a plurality of communicating holes to the reaction chamber. A second reactant gas is fed to a lower dispersing chamber. After dispersion, this second gas is fed through pipes through the first dispersing chamber and into the reaction chamber around the first reaction gas. Said first reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the first reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via communicating holes.

Method for producing semiconductors

The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method. Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer. According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening. Said reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via said communicating holes. Therefore, even if on a substrate with a large area, homogeneous semiconductor layer can be formed.

Apparatus for producing semiconductors

Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while the substrates are heated from above the reaction chamber. Continuous treatment of the substrates is provided with an increase in reactant gas utilization efficiency. Disturbance of reactant gas flow by thermal convection is prevented and semiconductor layers having smooth surfaces are formed.

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Osaka, Japan

Yoshinori Ohmori