Ushio Denki Kabushiki Kaisha

Mitsubishi Power, Ltd.

Yoshinori Nagai

Satoru Sugita

Jun Iwasaki

Kazumoto Tochihara

Takanori Nakamoto

Hiroyuki Nosaka

Yoshinori Taguchi

A thermal power generation system includes: a boiler; at least one steam turbine; a generator; a condenser; at least one low-pressure feed water; a high-pressure feed water pump; at least one high-pressure feed water heater capable of heating water pumped by the high-pressure feed water pump by utilizing extracted steam; a catalyst device including at least one kind of catalyst capable of promoting reduction reaction of nitrogen oxide and oxidation reaction of metallic mercury, the nitrogen oxide and the metallic mercury both being contained in the exhaust gas; at least one mercuric oxide removing device capable of removing mercuric oxide produced by the oxidation reaction of the metallic mercury from the exhaust gas; and an exhaust gas temperature adjustment device capable of adjusting a temperature of the exhaust gas at the catalyst device, by adjusting heating of the water by the at least one high-pressure feed water heater.

Thermal power generation system and control method for same

A device for exposing a peripheral area of a wafer, in which the area which is located within the wafer (and which need not be exposed) is prevented from being exposed regardless of the orientation the wafer which bears a notch in its periphery. The device includes an exposure light irradiation part, a wafer edge determination part, and a notch determination part are arranged integrally with each other. The wafer edge determination part moves such that it follows the edge of the wafer. The peripheral area of the edge of the wafer is exposed by exposure light emitted by the exposure light irradiation part. When the exposure sequence begins irradiation with exposure light is not immediately done, even if the means for wafer edge determination has determined the wafer edge. Instead, the wafer is rotated by a given amount and then exposure is begun. When the area irradiated with exposure light reaches the notch starting position, wafer edge determination is stopped until the end position of the notch is reached.

Device for exposure of a peripheral area of a wafer

Growing community of inventors

Yokohama, Japan

Yoshinori Nagai