Rohm Co., Ltd.

Ryukoku University

Yoshinori Miyamae

Mutsumi Kimura

Hiroshi Sekiguchi

Koji Taniuchi

Sumio Sugisaki

Fumiya Nagasawa

A single-photon source includes a substrate of a wide-bandgap semiconductor provided with a light-emission region including only one target point detect, a cover mask arranged on a main surface of the substrate and having an opening to which the light-emission region in the substrate is exposed, and an excitation system configured to shift an electron in a defect-ground state to an excited state at the point defect in the light-emission region. A single photon released from the point defect in the light-emission region when the electron in the excited state is shifted to the ground state is output through the opening in the cover mask.

Single-photon source and method of outputting single photon

Provided is a memristor that can be manufactured at a low temperature, and does not include metals of which resources might be depleted. This memristor includes a first electrode, a second electrode, and a memristor layer of an oxide having elements of Ga, Sn, and oxygen, disposed between the first electrode and the second electrode. When voltage is applied to the first electrode with respect to the second electrode, the voltage being positive or negative, a current flows; when voltage of a data-set voltage value is applied, a state is transitioned from a high-resistance state to a low-resistance state; and when voltage of a data-reset voltage value that is of an opposite sign to that of the data-set voltage value is applied, the state is transitioned from a low-resistance state to a high-resistance state.

Memristor and neural network using same

Growing community of inventors

Kyoto, Japan

Yoshinori Miyamae