Pioneer Corporation

Pioneer Electronic Corporation

Rohm Co., Ltd.

Yoshinori Kimura

Mamoru Miyachi

Hiroyuki Ota

Atsushi Watanabe

Hirokazu Takahashi

Kiyofumi Chikuma

Atsushi Onoe

Atsuya Ito

Toshiyuki Tanaka

Kiyoshi Tateishi

Isamu Akasaki

Hiroshi Amano

Masayuki Sonobe

Hitoshi Sato

Shuntaro Mori

Atushi Watanabe

Masaki Goma

A light detecting apparatus includes: a first photoelectric conversion element unit () and a second photoelectric conversion element unit () each of which converts input light to an electric current and output it; an optical current transducer unit () for outputting, as a detected current, a differential current between an electric current outputted by the first photoelectric conversion element unit and an electric current outputted by the second photoelectric conversion element unit; and a first current/voltage converting unit () for amplifying the detected current outputted from the optical current transducer unit, converting it to a voltage signal, and outputting the voltage signal.

Light detecting apparatus and fluid measuring apparatus

A bio-information measuring apparatus is provided, which suppresses pressure on a capillary vessel of body, stabilizes a measuring result of bio-information, and obtains a good S/N ratio. In an bio-information measuring apparatusin which a self-emission-type sensor devicefor optically measuring bio-information of specimenis attached to an attaching member, the attaching memberis composed of elastic material, and the attaching memberis arranged to be brought into contact with the specimenat the time of measuring the bio-information.

Bio-information measuring apparatus

A light-emitting sensor device is provided with a substrate (); an irradiating part (), disposed on the substrate, for applying light to a specimen; a light receiving part (), disposed on the substrate, for detecting light from the specimen caused by the applied light; a light scattering part, disposed at least one of between the irradiating part and the specimen and between the specimen and the light receiving part, for scattering at least one of light emitted from the irradiating part and the light from the specimen. The sensor device stably detects a predetermined type of information, such as a blood flow velocity, on the specimen.

Self-luminous sensor device

There is provided a biological information measuring apparatus, which permits to release constriction of capillary vessels a human body to provide stable measurement results of biological information and a proper S/N ratio. The biological information measuring apparatusincludes a beam-emitting type sensor deviceprovided on a mounting unitto optically measure biological information of a subject. The beam-emitting type sensor deviceis placed in a position so as to be in a non-contact state relative to the subjectwhen measuring the biological information.

Biological information measuring apparatus

An object is to provide a multi-wavelength integrated semiconductor laser device which can reduce variations in emission point distance, can be formed by simplified manufacturing processes, and can provide improve electric characteristics. A first semiconductor laser elementhaving an active layer ALfor emitting a laser beam of a first wavelength from its light-emitting point Xand a second semiconductor laser elementhaving an active layer ALfor emitting a laser beam of a second wavelength from its light-emitting point Xare bonded to each other via an adhesive layer MC made of metal. At least either one of the semiconductor laser elements has a ridge waveguide made of an n-type semiconductor. The semiconductor laser elementsandare bonded via the metal adhesive layer MC at the sides of their respective p-type semiconductors. A submount SUB is bonded to the first semiconductor laser elementvia metal at a side where its ridge waveguide is formed.

Method for manufacturing a multi-wavelength integrated semiconductor laser

This invention provides a semiconductor laser device and method of manufacture with a small interval between light emitting points of laser lights. A first light emitting element having a semiconductor substrate and a laser oscillation section, and a second light emitting element having a laser oscillation section, are brought together with a ridged waveguide of the laser oscillation section facing the ridged waveguide of the laser oscillation section, and then bonded together by virtue of SOGs having a small thickness. A conductive wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, and a wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, are arranged to extend until the insulating layer on the semiconductor substrate. Further, the ohmic electrodes and are formed on the bottom surface of the semiconductor substrate and the top surface of the laser oscillation section, respectively.

Semiconductor laser device and method of manufacturing the same

An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layerof a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrateis provided on the grown layer. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

Semiconductor light-emitting device and fabrication method thereof

An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.

Integrated semiconductor light-emitting device and method for manufacturing same

The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.

Semiconductor light-emitting element and method of manufacturing the same

A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. The first laser part has a ridge waveguide, and is formed by stacking thin films of group-III nitride compound semiconductors (for example, GaN-based semiconductors). The second laser part has a ridge waveguide, and is formed by stacking thin films of group III&#x2013;V compound semiconductors (such as GaAs). The first laser part and the second laser part are integrally bonded to each other by the interposition of an adhesive metal layer which is formed between the ohmic electrode layers. This provides the semiconductor laser device with a small distance between the light-emitting spots of the laser parts.

An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III&#x2013;V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.

A III-V nitride semiconductor laser device demonstrates an excellent emission characteristic without an increase in production cost. The refractive index of a p-side optical guiding layer is larger than that of an n-side guide layer.

III-V nitride semiconductor laser device

A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa ) In N (0&lE;x&lE;1, 0&lE;y&lE;1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Al Ga In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Al Ga In N (0&lE;x&Prime;&lE;1, 0&lE;y&Prime;&lE;1) and deposited filling the aperture of the current constricting layer, and a clad layer made of Al Ga In N (0&lE;u&lE;1, 0&lE;v&lE;1) and deposited on the electrode-side guide layer.

Group III nitride compound semiconductor laser and manufacturing method thereof

A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (Al Ga ) .In N (0&lE;&times;&lE;1, 0&lE; &lE;1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor Al Ga N (0.7&lE;z&lE;1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.

Method for fabricating a group III nitride semiconductor device

The disclosure is a method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate. The method includes a step of forming a crystal layer made of a group-III nitride semiconductor (Al,Ga,),In,N (0&lE;x&lE;1, 0&lE;y&lE;1) having an added group II element over the substrate; a step of heating the crystal layer up to a predetermined temperature in a thermal treatment atmosphere and maintaining the predetermined temperature for a first time period; and a step of introducing a hydrocarbon gas into the thermal treatment atmosphere for at least a partial time period within the first time period. The method further includes a step of irradiating an electromagnetic wave or photons to the crystal layer in the at least a partial time period, wherein the electromagnetic wave or photons have an energy greater than an energy forbidden band width of the group III nitride semiconductor in the crystal layer.

Growing community of inventors

Tsurugashima, Japan

Yoshinori Kimura