Toagosei Company, Ltd.

Yoshinori Kimata

Hiroshi Suzuki

Koji Ishikawa

The objective of the present invention is to provide a method for obtaining a high purity disilicon hexachloride by removing a silanol with good efficiency from a disilicon hexachloride material containing the silanol as an impurity. The purification method for disilicon hexachloride of the present invention comprises a process for contacting a disilicon hexachloride material containing disilicon hexachloride and a silanol as an impurity with an adsorbent material such as activated carbon to remove the silanol. The method may further comprise a distillation process. The above processes are preferably performed in an atmosphere of an inert gas.

Method for purification of disilicon hexachloride and high purity disilicon hexachloride

The removal of intra-cell moisture can be performed within a short period of time by the use of pressure cell. In particular, a method of measuring the concentration of silanol groups characterized in that in the measurement of the concentration of silanol groups in a silicon compound according to infrared absorption spectroscopy, a step of maintaining an intra-cell pressure at 20 Pa or below and a step of maintaining the same at 0.2 to 1 MPa are repeated at least twice before charging the cell with a silicon compound, thereafter a silicon compound is introduced in the cell and cell for measurement thereof is carried out to thereby identify the concentration of silanol groups in the silicon compound. For this method, there is provided a cell for infrared absorption spectroscopy measurement thereof is carried out to thereby identify the concentration of silanol groups in the silicon compound. For this method, there is provided a cell for infrared absorption spectroscopy measurement which can withstand a vacuum of 20 Pa or below and also can withstand a pressurization of 0.2 to 1 MPa.

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Minato-ku, Japan

Yoshinori Kimata