Shin-etsu Chemical Co., Ltd.

Yoshinori Hirano

Hideyoshi Yanagisawa

Hideto Kato

Satoshi Asai

Tomoyoshi Furihata

Katsuya Takemura

Kazunori Kondo

Masashi Iio

Hiroshi Kanbara

Michihiro Sugo

Masahiro Furuya

Hiromasa Yamaguchi

Toshihiko Fujii

Kazuhiro Nishikawa

Takahiro Goi

A photosensitive resin composition comprising a polymer containing a silphenylene skeleton and a fluorene skeleton and having a crosslinkable site in the molecule, a phenol compound having a Mw of 300-10,000, a photoacid generator, and a benzotriazole or imidazole compound has improved film properties. Even from a thick film, a fine size pattern can be formed.

Photosensitive resin composition, photosensitive dry film, and pattern forming process

A pattern is formed by (i) applying a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether onto a substrate to form a resist film thereon, (ii) exposing the resist film to radiation, and (iii) dry etching the resist film with an oxygen-containing gas for development. Using the chemically amplified positive resist composition, a positive pattern is formed via dry development without a need for silylation.

Pattern forming process

A chemically amplified positive resist composition is provided comprising (A) a polymer adapted to tarn soluble in alkaline aqueous solution under the action, of acid, (B) a photoacid generator, (C) a car boxy lie acid, and (D) a benzotriazole compound and/or an imidazole compound. When the resist composition is coated on a copper substrate as a thick film of 5-250 &#x3bc;m thick and lithographically processed into a pattern, a high resolution is available and the pattern is of rectangular profile.

Chemically amplified positive resist composition and pattern forming process

A laminate comprising a thermoplastic film and a positive resist film is provided, the positive resist film comprising (A) a novolak resin-naphthoquinone diazide (NQD) base resin composition, (B) a polyester, and (C) 3-30 wt % of an organic solvent. The resist film may be transferred to a stepped support without forming voids.

Positive resist film laminate and pattern forming process

A chemically amplified positive resist composition is provided comprising a specific alkali-soluble polymer adapted to turn soluble in alkaline aqueous solution under the action of acid as base resin, an alkali-soluble polymer, and a photoacid generator in an organic solvent. The composition forms a resist film which can be briefly developed to form a pattern at a high sensitivity without generating dimples in pattern sidewalls.

Chemically amplified positive resist composition and patterning process

A laminate comprising a thermoplastic film and a chemically amplified positive resist film thereon is provided, the resist film comprising (A) a base polymer having a hydroxyphenyl group and a protective group, the polymer turning alkali soluble as a result of the protective group being eliminated under the action of acid, (B) a photoacid generator, (C) an organic solvent, and (D) a polymer having an ester bond in its backbone. The resist film may be transferred to a stepped support without forming voids.

Chemically amplified positive resist film laminate and pattern forming process

A chemically amplified positive resist dry film to be formed on a support film contains 5-40 wt % of a component having a boiling point of 55-250&#xb0; C. under atmospheric pressure. The resist dry film having flexibility and dimensional stability can be prepared through simple steps. The resist dry film can be efficiently and briefly laid on an article and processed to form a pattern.

Chemically amplified positive resist dry film, dry film laminate and method of preparing laminate

A modified novolak phenolic resin is obtained by reacting a novolak phenolic resin containing at least 50 wt % of p-cresol with a crosslinker. This method increases the molecular weight of the existing novolak phenolic resin containing at least 50 wt % of p-cresol to such a level that the resulting modified novolak phenolic resin has heat resistance enough for the photoresist application.

Modified novolak phenolic resin, making method, and resist composition

A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.

Method for manufacturing micro-structure

A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin.

Method for manufacturing micro-structure and optically patternable sacrificial film-forming composition

A chemically amplified positive resist composition is provided comprising a substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, a poly(meth)acrylate polymer having Mw of 1,000-500,000, and an acid generator in a solvent. The composition forms on a substrate a resist film of 5-100 &#x3bc;m thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.

A positive resist composition comprising an organosiloxane-modified novolak resin, a photosensitive agent, and an organic solvent is provided, the resin comprising structural units having formula (1) wherein Ris an organosiloxy group, and Ris hydrogen or alkyl. The composition is photosensitive, turns alkali soluble in the exposed region, eliminates any film thickness loss after development, and displays improved resistance to electrolytic plating and Odry etching. 

Positive resist composition and pattern forming process

An organosiloxane-modified novolak resin comprising structural units having formula (1) wherein Ris an organosiloxy group having a monovalent C-Chydrocarbon group bonded to silicon, and Ris H or C-Calkyl or alkoxy. The resin has high heat resistance and high strength inherent to novolak resins and low stress inherent to organosilicon compounds. 

Organosiloxane-modified novolak resin and making method

A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, an epoxy compound, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 80-250&#xb0; C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm. At the end of step (F), the sacrificial film has a sidewall angle of 80&#xb0;-90&#xb0; relative to the substrate.

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Annaka, Japan

Yoshinori Hirano