Sanyo Electric Co., Ltd.

Yoshinori Hino

Naoei Takeishi

Toshimitsu Taniguchi

Yoshitaka Haraguchi

A semiconductor forming transistors on a semiconductor substrate includes a low concentration source/drain region formed in the semiconductor substrate, a high concentration source/drain region formed in the source/drain region, a gate electrode formed on the substrate through gate oxide film, a P type body region formed under the gate electrode and placed between the source/drain regions and, plug contact portions contacting the source/drain region and arranged in plural, and a source/drain electrode connecting to the source/drain region with contact through the contact portions.

Semiconductor device with parallel interconnects

Semiconductor device with smoothed pad portion

The semiconductor device of the invention includes transistors for a driver and dummy patterns formed to be adjacent to the end portion of each output bit group constituting a cathode driver, anode drivers and anode drivers.

Semiconductor device and pattern layout method thereof

In the driver for driving display having an anode driver, a cathode driver, and memory portions of a semiconductor device of the invention, anode driver regions connected to the memory portions are laid out equally in the chip, and SRAMs are arranged equally in the vicinity of each of anode driver regions so that drawing of wiring becomes easy and size of the chip is miniaturized.

Pattern layout method of semiconductor device

In the driver for driving display having an anode driver, a cathode driver, and memory portions of a semiconductor device of the invention, anode driver regions connected to the memory portions are laid out equally in the chip, and SRAMs and are arranged equally in the vicinity of each of anode driver regions so that drawing of wiring becomes easy and size of the chip is miniaturized.

Growing community of inventors

Gunma, Japan

Yoshinori Hino