Resonac Corporation

Showa Denko Materials Co., Ltd.

Hitachi Chemical Company, Ltd.

Yoshinori Ejiri

Hideo Nakako

Masahiro Kimura

Akio Takahashi

Yuki Kawana

Dai Ishikawa

Chie Sugama

Kazuhiko Kurafuchi

Motohiro Negishi

Masaya Toba

Shinichirou Sukata

Kunihiko Akai

Masayuki Miyaji

Kazuyuki Mitsukura

Toshimitsu Moriya

Motoki Yonekura

Katsuyuki Masuda

Kazunori Yamamoto

Yasushi Kumashiro

Kiyoshi Hasegawa

Michiko Natori

Yuuhei Okada

Yuichi Yanaka

Hiroshi Masuda

Shigeharu Arike

Keita Sone

Yoshiaki Tsubomatsu

Toshiaki Tanaka

Kenji Takai

Takahiro Suzuki

Junichi Kakehata

Takaaki Nohdoh

Maki Inada

Youichi Machii

Shuichi Hatakeyama

Manabu Ishii

Shunya Yokozawa

Kyoko Kuroda

Yoshiaki Kurihara

Ryuji Akebi

Hiroshi Yamamoto

Shunya Yokosawa

Masaru Fujita

Kosuke Urashima

Ryo Honna

Kohsuke Urashima

Satomi Yagi

Takehisa Sakurai

An aspect of the invention is a method for producing a substrate having through-silicon vias, the method including a preparation step of preparing a silicon substrate provided with through-holes, in which the through-holes communicate with both principal surfaces; a copper sintered body formation step of forming a copper sintered body having a porous structure such that the copper sintered body fills at least the through-holes; a resin impregnation step of impregnating the copper sintered body with a curable resin composition; and a resin curing step of curing the curable resin composition impregnated into the copper sintered body to form an electric conductor that includes the copper sintered body having pores filled with a resin cured product, and providing through-silicon vias in the through-holes.

Method for producing substrate having through-silicon vias, substrate having through-silicon vias, and copper paste for through-silicon via formation

A method for producing an anisotropic conductive film, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses; a transfer step wherein an insulating resin material is brought into contact with the recess opening side of the base material that includes the solder particles in the recesses, thereby obtaining a first resin layer on which the solder particles have been transferred; and a layering step wherein a second resin layer that is configured from an insulating resin material is formed on the surface of the first resin layer, on which the solder particles have been transferred, thereby obtaining an anisotropic conductive film.

Anisotropic conductive film and method for producing the anisotropic conductive film including a base material having recesses and solder particles formed inside the recesses

A solder bump forming member including: a base substrate having a plurality of recesses; and solder particles in the recesses, in which the solder particle has an average particle diameter of 1 to 35 μm and a C.V. value of 20% or less, and a part of the solder particle projects from the recess, or in cross-sectional view, when a depth of the recess is designated as H, and a height of the solder particle is designated as H, H<His established.

Solder bump forming member, method for manufacturing solder bump forming member, and method for manufacturing electrode substrate provided with solder bump

Provided is a copper paste for forming a wick of a heat pipe, the copper paste containing copper particles, thermally decomposable resin particles, a dispersion medium for dispersing the copper particles and the thermally decomposable resin particles, and a thermally decomposable resin that is soluble in the dispersion medium.

Copper paste, wick formation method, and heat pipe

The present invention relates to solder particles, each of which partially has a flat portion in the surface. By using these solder particles, electrodes facing each other are able to be appropriately connected, thereby achieving an anisotropic conductive material that exhibits excellent conduction reliability and excellent insulation reliability.

Solder particles

A connection structure including: a first circuit member having a plurality of first electrodes; a second circuit member having a plurality of second electrodes; and an intermediate layer having a plurality of bonding portions electrically connecting the first electrodes and the second electrodes, in which at least one of the first electrode and the second electrode that are connected by the bonding portion is a gold electrode, and 90% or more of the plurality of bonding portions include a first region containing a tin-gold alloy and connecting the first electrode and the second electrode and a second region containing bismuth and being in contact with the first region.

Connection structure and manufacturing method therefor

One aspect of the present invention is a method for manufacturing an electronic component, the method including: a first step of applying a metal paste containing metal particles onto a polymer compact in a prescribed pattern to form a metal paste layer; a second step of sintering the metal particles to form metal wiring; a third step of applying a solder paste containing solder particles and a resin component onto the metal wiring to form a solder paste layer; a fourth step of disposing an electronic element on the solder paste layer; and a fifth step of heating the solder paste layer so as to form a solder layer bonding the metal wiring and the electronic element, and so as to form a resin layer covering at least a portion of the solder layer.

Electronic component and method for manufacturing electronic component

An organic interposer includes: a first organic insulating layer including a groove; a first metal wire located in the groove; a barrier metal material covering the first metal wire; and a second metal wire located above the first metal wire, wherein the barrier metal material includes: a first barrier metal film interposed between the first metal wire and an inner surface of the groove; and a second barrier metal film located on the first metal wire, and wherein the second metal wire is in contact with both of the first barrier metal film and the second barrier metal film.

Substrate and method for manufacturing the same

An embodiment of the present invention provides a method for producing a bonded object. The method comprises a step for preparing a laminate in which a first member, a copper bonding paste, and a second member are laminated in order and a step for sintering the copper bonding paste under a pressure of 0.1-1 MPa. The copper bonding paste contains metal particles and a dispersion medium, wherein the content of metal particles is at 50 mass % or more with respect to the total mass of the copper bonding paste, and the metal particles contain 95 mass % or more of submicro copper particles with respect to the total mass of the metal particles.

Method for producing bonded object and semiconductor device and copper bonding paste

This member connection method includes a printing step. In the printing step, a coating film-formed region in which the coating film is formed, and a coating film non-formed region in which the coating film is not formed are formed in the print pattern, and the coating film-formed region is divided into a plurality of concentric regions and a plurality of radial regions by means of a plurality of line-shaped regions provided so as to connect various points, which are separated apart from one another in the marginal part of the connection region.

Member connection method

A method for manufacturing a thermoelectric conversion module of the present invention is a method for manufacturing a thermoelectric conversion module including a thermoelectric semiconductor part in which a plurality of p-type semiconductors and a plurality of n-type semiconductors are alternately arranged, and a high temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a high temperature heat source side and a low temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a low temperature heat source side, which electrically connect the p-type semiconductor and the n-type semiconductor adjacent to each other in series, and includes a binding step of binding at least one of the high temperature side electrode and the low temperature side electrode, and the p-type semiconductor and the n-type semiconductor together, by sintering a binding layer containing metal particles, which is provided between the electrode and the semiconductor.

Method for manufacturing thermoelectric conversion module, thermoelectric conversion module, and binder for thermoelectric conversion module

Organic interposer and method for manufacturing organic interposer

A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 &#x3bc;m and less than or equal to 0.8 &#x3bc;m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 &#x3bc;m and less than or equal to 50 &#x3bc;m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300&#xb0; C., and a content of the solvent having a boiling point of higher than or equal to 300&#xb0; C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Copper paste for pressureless bonding, bonded body and semiconductor device

Disclosed is a composition containing copper particles and organic solvents, in which the organic solvents include a first organic solvent having a vapor pressure at 20&#xb0; C. of 200 Pa or more and 20 kPa or less, and a second organic solvent having a vapor pressure at 20&#xb0; C. of 0.5 Pa or more and less than 200 Pa.

Composition containing organic solvents with different vapor pressures, conductor made from composition, method for manufacturing conductor, and structure comprising conductor

Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I):()/&#xd7;100&#x2265;1.0&#x2003;&#x2003;(I)[in Formula (I), Mrepresents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and Mrepresents a non-volatile content in the joining material.]

Method for producing joined body, and joining material

Growing community of inventors

Tokyo, Japan

Yoshinori Ejiri