Canon Kabushiki Kaisha

Yoshinobu Sekiguchi

Takao Yonehara

Toshitami Hara

Hidetoshi Nojiri

Seiichi Miyazawa

Akira Shimizu

Kenji Yamagata

Isao Hakamada

Naoki Nishimura

Tetsuya Takeuchi

Makoto Koto

Kojiro Nishi

Takeo Tsukamoto

Keisuke Yamamoto

Takashi Ikeda

Hisaaki Kawade

Masato Yamanobe

Sotomitsu Ikeda

Takeo Ono

Yasuhiro Hamamoto

Mitsutoshi Hasegawa

Tatsuro Uchida

Fumihiro Inui

Takeshi Uchida

Noboru Koumura

Tetsuya Shimada

Kota Kiyama

Masahiro Okuda

Tadahiko Hirai

Katsuhiko Takano

Shoji Kanemura

Noriyuki Chino

Junji Yasuda

Takeshi Yoshioka

Toshimitsu Matsuu

Yuji Uramoto

A light source includes a control unit that controls currents injected into at least one light emitting region and a light emission spectrum conversion region. The at least one light emitting region includes a first light emitting region and a second light emitting region different from the first light emitting region, light that is emitted from the first light emitting region and passes through the light emission spectrum conversion region is combined with the light that is emitted from the first or second light emitting region and does not pass through the light emission spectrum conversion region. The control unit controls the currents injected into the light emission spectrum conversion region and the first light emitting region so that the current density of the light emission spectrum conversion region is smaller than the current density of the first light emitting region.

Light source and optical coherence tomography apparatus using the same

A surface emitting laser according to the present invention includes a lower reflector, a first spacer layer, an active layer, a second spacer layer composed of a semiconductor material, a gap section formed of at least one of vacuum and gas, and an upper reflector in the written order, and also includes a control mechanism that changes a distance between an interface between the second spacer layer and the gap section and an interface between the upper reflector and the gap section. An optical path length n&#xd7;d extending from an interface between the lower reflector and the first spacer layer to an interface between the second spacer layer and the gap section satisfies a predetermined relationship.

Surface emitting laser having a factor of equivalent refractive index constraint by scaled central wavelengths and optical coherence tomography apparatus equipped with such surface emitting laser

Provided is an LED device which is capable of reducing the emission size without changing the size of an LED and is capable of switching the emission size arbitrarily. The LED device includes, on a substrate, a carrier control layer, a lower current confinement layer, an active layer, and an upper current confinement layer. A p-type electrode is provided on the upper current confinement layer. Two n-type electrodes are arranged on the carrier control layer so as to dispose the p-type electrode between the two n-type electrodes in an in-plane direction of the substrate.

LED device, LED device array, and method of driving the LED device array

A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (), a compound semiconductor multilayer film (), an insulating film (), and a semiconductor substrate () on a compound semiconductor substrate (), and having a first groove () which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove () which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

Semiconductor member, semiconductor article manufacturing method, and LED array using the manufacturing method

A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other.

Surface emitting laser with current constriction layer and multiple active regions

An image forming apparatus capable of enhancing the accuracy of the scanning position of a laser beam to thereby obtain a more precise image. Optical sensors detect reflected light from a surface of a photosensitive drum. During image formation, the apparatus detects the scanning speed of the laser beam in a main scanning direction based on detection signals from the respective optical sensors in each of divisional sections of an image forming area in the main scanning direction. The apparatus corrects magnification of the image in the main scanning direction, based on results of detection of the scanning speed of the laser beam in the main scanning direction.

Image forming apparatus with scanning position corrected by non-imaging laser beam

To provide a surface emitting laser having a structure that can suppress the oscillation of a high-order transverse mode. In the surface emitting laser, a plurality of semiconductor layers including a lower DBR, an upper DBR, an active layer interposed therebetween, and a current confinement layer for confining a current injected to the active layer are stacked on a substrate, and a barrier structure limits the migration of a majority carrier, that has passed through a current unconfining portion, in an electric field application direction; the barrier structure is provided between the current confinement layer and the active layer so that an oscillation of a high-order transverse mode is suppressed by the barrier structure promoting the diffusion of the majority carrier in an in-plane direction of the barrier structure.

Surface emitting laser, surface emitting laser array, and image formation apparatus

Provided is a surface emitting laser which can maintain a fundamental transverse mode to obtain higher power while higher-order transverse mode oscillations are suppressed, and a method of manufacturing the surface emitting laser. The surface emitting laser includes: an aperture portion to be a path for injecting a current to an active layer; a current confinement region provided in the vicinity of the aperture portion; and a current injection region which is provided on an opposite side to a light output side with respect to the active layer therebetween, in which a current injection path in the current injection region has a smaller diameter than the aperture portion.

Surface emitting laser and method of manufacturing the same

A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.

Light-emitting element array and image forming apparatus

A solid-state image sensing apparatus having a three-dimensional structure whose manufacturing process can be simplified is provided. A solid-state image sensing apparatus formed by bonding a first member and a second member is provided. The first member has a first surface on the side of the bonding interface between the first member and the second member and a second surface on the opposite side of the bonding interface. The second member has a third surface on the bonding interface side and a fourth surface on the opposite side of the bonding interface. The first member includes photoelectric conversion elements which are formed on the first surface before the first member is bonded to the second member. The second member includes circuit elements which are formed on the third surface before bonding.

Method of manufacturing an image sensing apparatus in which two members are bonded together

An object of the present invention is to provide a method of forming a light-emitting element at a lower cost than a conventional cost with suppressing the deterioration of the substrate due to thermal distortion in comparison with a conventional method of recycling a substrate and further having an effect equal to that of the method of recycling a substrate. The method of forming a light-emitting element by growing a separation layer and a light-emitting layer in this order on a first substrate, bonding the light-emitting layer onto a second substrate, and removing the separation layer to form the light-emitting layer on the second substrate, includes growing a plurality of groups each containing the separation layer and light-emitting layer on the first substrate; patterning the light-emitting layer existing as a uppermost layer into an island shape, and then bonding the light-emitting layer onto the second substrate, and etching the separation layer adjacent to the light-emitting layer patterned into the island shape to form the light-emitting layer patterned into the island shape on the second substrate.

Method of forming light-emitting element

A magnetization reversal method is disclosed in which an external magnetic field is applied to a magnetoresistive film requiring a strong magnetic film for reversal. A weak magnetic field is applied when magnetically coupled perpendicular magnetic films are used in which the magnetoresistive film has a structure wherein a nonmagnetic film is placed between magnetic films with an easy axis of magnetization along a perpendicular direction to a film plane, and in which said external magnetic field is comprised of magnetic fields from a plurality of directions including a direction of easy magnetization of the magnetic films.

Magnetization reversal method for applying a multi-directional external magnetic field to a perpendicular magnetoresistive film

This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer () on a seed substrate (), a semiconductor film forming step of forming a semiconductor film () on the separation layer (), and a separation step of separating, by using the separation layer (), the semiconductor film () from a composite member (Ia) formed in the semiconductor film forming step.

Growing community of inventors

Machida, Japan

Yoshinobu Sekiguchi