Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Other

Renesas Technology Corp.

Hitachi Device Engineering Co., Ltd.

Hitachi Ulsi Engineering Corp.

Renesas Electronics Corporation

Hitachi Microcomputer System, Ltd.

Rising Silicon, Inc.

Vlsi Engineering Corporation

Hitachi, Ltd., Hitachi Vlsi Engineering Corporation

Yoshinobu Nakagome

Masashi Horiguchi

Masakazu Aoki

Kiyoo Itoh

Hitoshi Tanaka

Kazuhiko Kajigaya

Jun Etoh

Takeshi Sakata

Yuichi Okuda

Kan Takeuchi

Hideharu Yahata

Masaru Kokubo

Masayuki Nakamura

Hiroki Miyashita

Sadayuki Ohkuma

Kazuo Yano

Takashi Hashimoto

Yoji Nishio

Tomoyuki Ishii

Koichi Seki

Hiroyuki Mizuno

Takao Watanabe

Takahiro Nagano

Shinichi Ikenaga

Seiji Funaba

Eiji Kume

Ryoichi Hori

Katsuhiro Shimohigashi

Kazushige Ayukawa

Yasushi Kawase

Takesada Akiba

Shin'ichi Ikenaga

Takaaki Noda

Norio Miyake

Yoshiki Kawajiri

Eiji Yamasaki

Takayuki Kawahara

Katsutaka Kimura

Goro Kitsukawa

Masaharu Kubo

Osamu Nagashima

Toshiaki Masuhara

Yasushi Watanabe

Masamichi Ishihara

Hidetoshi Iwai

Tetsuya Nakagawa

Masanori Isoda

Sadayuki Morita

Kazuya Ito

Takahiro Sonoda

Takashi Sato

Katsumi Matsuno

Tatsumi Uchigiri

Koji Kawamoto

Haruko Tadokoro

Wataru Arakawa

Koichiro Ishibashi

Toshihiro Tanaka

Kazumasa Yanagisawa

Hitoshi Kume

Digh Hisamoto

Kunio Uchiyama

Toshio Sasaki

Masataka Kato

Tokuo Kure

Shinichiro Kimura

Masayuki M Nakamura

Susumu Narita

Hideo Nakamura

Takeshi Sakai

Shinichi Miyatake

Keiichi Yoshida

Shinichi Yoshioka

Ikuya Kawasaki

Osamu Minato

Yoshifumi Kawamoto

Kanji Oishi

Toru Kaga

Makoto Hanawa

Atsushi Kiuchi

Tetsuro Matsumoto

Hisayuki Higuchi

Masaya Muranaka

Yukihide Suzuki

Toshiyuki Sakuta

Yoshikazu Saitoh

Eiji Takeda

Yasuhiro Kasama

Toshifumi Ozaki

Toshikazu Tachibana

Takashi Nishida

Kazuo Ishikura

Suguru Tachibana

Hiromi Matsuura

Ryuji Shibata

Shimpei Iijima

Saneaki Tamaki

Toshinobu Shinbo

Noriyuki Hamma

Hiromi Tukada

A clock-generating circuit for forming internal clock signals by comparing a signal obtained by delaying, through a variable delay circuit, an input clock signal input through an external terminal with the input clock signal through a phase comparator circuit, and so controlling the delay time of the variable delay circuit that they are brought into agreement with each other, wherein the clock-generating circuit and an internal circuit to be operated by the clock signals formed thereby are formed on a common semiconductor substrate, and an element-forming region in which the clock-generating circuit is formed is electrically isolated from an element-forming region in which the digital circuit is constituted on the semiconductor substrate relying upon the element-isolation technology. The power-source passages, too, are formed independently of other digital circuits.

Semiconductor integrated circuit device

A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode.

Semiconductor device with improved power supply control for a plurality of memory arrays

Semiconductor device with improved power supply arrangement

A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

Semiconductor element and semiconductor memory device using the same

Semiconductor device with power down arrangement for reduce power consumption

A semiconductor integrated circuit is provided having first and second logic circuits coupled to first and second sub-power supply lines, respectively. First and second switching transistors are also provided to connect the first and second sub-power supply lines to a main power supply line. The first and second switching transistors are kept off in an operation stop state of the first and second logic circuits, and are kept on in operable state of the first and second logic circuits.

Semiconductor integrated circuit including first and second switching transistors having operation states corresponding to operation states of first and second logic circuits

A semiconductor integrated circuit includes a logic circuit which is formed of p-channel MIS transistors and n-channel MIS transistors, a first oscillation circuit of variable oscillation frequency which is formed of p-channel MIS transistors and n-channel MIS transistors, a control circuit which produces a control signal for controlling the threshold voltage of the p-channel and n-channel MIS transistors, and a second oscillation circuit which produces multiple reference clock signals of different frequencies depending on the operation mode. The control circuit receives a reference clock signal and controls first oscillation circuit with the control signal so that the oscillation frequency of the first oscillation circuit corresponds to the frequency of the reference clock signal.

Semiconductor integrated circuit device and microcomputer

Semiconductor device having a power down mode

Growing community of inventors

Hamura, Japan

Yoshinobu Nakagome