Mitsubishi Materials Corporation

Sumco Corporation

Sumitomo Mitsubishi Silicon Corporation

Mitsubishi Materials Silicon Corporation

Nippon Silicon Kabushiki Kaisha

Yoshinobu Nakada

Saburo Wakita

Hiroyuki Shiraki

Takeshi Hasegawa

Akira Mitsuhashi

Masahito Komasaki

Takaaki Shiota

Junichi Sasaki

Yuji Ishiwari

Jun-ichi Sasaki

Yuhji Ishiwari

Yoshiyuki Nagatomo

Hideo Tanaka

Toshiyuki Nagase

Kazuhiro Akiyama

Hisashi Furuya

Kenichi Kaneko

Koya Arai

Yoshihisa Nonogaki

Hiroshi Koya

Jun Furukawa

Etsuro Morita

Fumitake Kikuchi

So Ik Bae

Yuji Nakata

Hisaaki Suga

Shunji Ishibashi

Naoki Rikita

The present invention provides a fine silicon powder and the like including fine silicon particles having a microscopically measured particle diameter of 1 μm or more and an average circularity determined in accordance with Formula (1) of 0.93 or more, in which an average particle diameter based on volume, which is measured by a laser diffraction scattering method, is in a range of 0.8 μm or more and 8.0 μm or less, an average particle diameter based on number, which is measured by the laser diffraction scattering method, is in a range of 0.100 μm or more and 0.150 μm or less, and a specific surface area, which is measured by a BET method, is in a range of 4.0 m/g or more and 10 m/g or less. Circularity=(4×π×projected area of particle)/peripheral length of particle (1).

Fine silicon particles and production method thereof

A thermoelectric conversion material formed of a sintered body containing magnesium silicide as a main component contains 0.5 mass % or more and 10 mass % or less of aluminum oxide. The aluminum oxide is distributed at a crystal grain boundary of the magnesium silicide.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and method for manufacturing thermoelectric conversion material

A magnesium-based thermoelectric conversion material includes a first layer formed of MgSi and a second layer formed of MgSiSn(here, x is equal to or greater than 0 and less than 1), in which the first layer and the second layer are directly joined to each other, and within a junction surface with the first layer and in the vicinity of the junction surface, the second layer has a tin concentration transition region in which a tin concentration increases as a distance from the junction surface increases. The junction layer is regarded as a site in which a tin concentration is found to be equal to or lower than a detection limit by the measurement performed using EDX.

Magnesium-based thermoelectric conversion material, magnesium-based thermoelectric conversion element, thermoelectric conversion device, and method for manufacturing magnesium-based thermoelectric conversion material

A magnesium-based thermoelectric conversion material made of a sintered compact of a magnesium compound, in which, in a cross section of the sintered compact, a Si-rich metallic phase having a higher Si concentration than in magnesium compound grains is unevenly distributed in a crystal grain boundary between the magnesium compound grains, an area ratio of the Si-rich metallic phase is in a range of 2.5% or more and 10% or less, and a number density of the Si-rich metallic phase having an area of 1 &#x3bc;mor more is in a range of 1,800/mmor more and 14,000/mmor less.

Magnesium-based thermoelectric conversion material, magnesium-based thermoelectric conversion element, and method for producing magnesium-based thermoelectric conversion material

A thermoelectric conversion material consists of a non-doped sintered body of a magnesium-based compound, in which an electric resistance value is 1.0&#xd7;10&#x3a9;&#xb7;m or less. The magnesium-based compound is preferably one or more selected from a MgSi-based compound, a MgSn-based compound, a MgSiSn-based compound, and a MgSiGe-based compound.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and method for manufacturing thermoelectric conversion

A thermoelectric conversion element includes an element body formed of a thermoelectric conversion material of a silicide-based compound, and electrodes each formed on one surface of the element body and the other surface opposite the one surface. The electrodes are formed of a sintered body of a copper silicide, and the electrodes and the element body are directly joined.

Thermoelectric conversion element

Provided is a thermoelectric conversion module, in which n-type thermoelectric conversion elements and p-type thermoelectric conversion elements are formed of materials having different thermal expansion coefficients, one surface sides of the n-type thermoelectric conversion elements and one surface sides of the p-type thermoelectric conversion elements are aligned and joined on one surface side of an insulating substrate, and thermal conductive members are formed on other surface sides of the n-type thermoelectric conversion elements and other surface side of the p-type thermoelectric conversion elements, respectively.

Thermoelectric conversion module

A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon memberincludes a coating layerthat coats a surface of the silicon memberwherein the coating layeris composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.

Silicon member and method of producing the same

A thermoelectric conversion module in which a plurality of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements, which are combined in pairs, are connected in series between a pair of opposing wiring substrates via the wiring substrates: electrode parts to which the thermoelectric conversion elements are connected, are formed on surfaces of ceramic substrates of the wiring substrates: among the thermoelectric conversion elements, the thermoelectric conversion element having a larger thermal expansion coefficient has the length, in a direction in which the wiring substrates face each other, that is smaller than the length, in a direction in which the wiring substrates face each other, of the thermoelectric conversion element having a smaller thermal expansion coefficient: an electrically conductive spacer is interposed between at least one of the two ends of the thermoelectric conversion element having a larger thermal expansion coefficient and the ceramic substrate of the wiring substrate.

Thermoelectric conversion module and thermoelectric conversion device

A method for manufacturing a magnesium-based thermoelectric conversion material of the present invention includes a raw material-forming step of forming a raw material for sintering by adding silicon oxide in an amount within a range equal to or greater than 0.5 mol % and equal to or smaller than 13.0 mol % to a magnesium-based compound, and a sintering step of heating the raw material for sintering at a temperature within a range equal to or higher than 750&#xb0; C. and equal to or lower than 950&#xb0; C. while applying pressure equal to or higher than 10 MPa to the raw material for sintering so as to form a sintered substance.

Method for manufacturing magnesium-based thermoelectric conversion material, method for manufacturing magnesium-based thermoelectric conversion element, magnesium-based thermoelectric conversion material, magnesium-based thermoelectric conversion element, and thermoelectric conversion device

A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.

Silicon member for semiconductor apparatus and method of producing the same

The present invention relates to a silicon part and a method of producing the silicon part. The silicon part is not worn quickly and particle formation is suppressed even if it is positioned in the reaction chamber of a plasma etching apparatus. The silicon part for the plasma etching apparatus is made of any one selected from a group consisting of poly-crystalline silicon, mono-like silicon, and single-crystalline silicon. Also, the silicon part includes boron as a dopant in a range from 1&#xd7;10atoms/cc or higher to 1&#xd7;10atoms/cc or lower.

Silicon part for plasma etching apparatus and method of producing the same

In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120&#xb0; with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.

Heat treatment jig and heat treatment method for silicon wafer

A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of Nso that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.

Growing community of inventors

Ageo, Japan

Yoshinobu Nakada