Hitachi, Ltd.

Advanced Lcd Technologies Development Center Co., Ltd.

Hitachi-High-Technologies Corporation

Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center

Renesas Electronics Corporation

Sharp Kabushiki Kaisha Corporation

Renesas Technology Corp.

Hitachi High-Tech Corporation

Yoshino Kogyosho Co., Ltd.

Teijin Pharma Limited

Gakken Co., Ltd.

Yoshinobu Kimura

Masakiyo Matsumura

Masayuki Jyumonji

Mikihiko Nishitani

Yukio Taniguchi

Masato Hiramatsu

Hirotaka Yamaguchi

Susumu Tsujikawa

Makoto Ohkura

Natsuki Tsuno

Hironobu Abe

Hiroyuki Ogawa

Mutsuko Hatano

Yoshitaka Yamamoto

Nobuyuki Sugii

Shinya Yamaguchi

Seong-Kee Park

Fumiki Nakano

Kiyoshi Ogata

Takuo Tamura

Yoichi Takahara

Hironaru Yamaguchi

Masakazu Saitou

Hideyuki Kazumi

Takeo Shiba

Toshihiko Itoga

Kazuhiko Horikoshi

Masao Kondo

Takashi Ogawa

Ryuta Tsuchiya

Takafumi Miwa

Renichi Yamada

Digh Hisamoto

Yoshiyuki Kaneko

Hiroyuki Shinada

Hajime Kawano

Shinichi Saito

Kazuo Takeda

Hiroya Ohta

Osamu Komuro

Yukio Takasaki

Yuki Mori

Junichi Sakano

Zhaohui Cheng

Tomoya Kato

Takahiro Kamo

Masakazu Saito

Toshiyuki Ohno

Hikaru Koyama

Kazuki Tani

Junichiro Tomizawa

Hiroshi Suzuki

Motoyasu Terao

Yoichi Ose

Hideyuki Matsuoka

Naomasa Suzuki

Yoshitaka Sasago

Norikatsu Takaura

Toshihide Agemura

Akio Shima

Toshiyuki Yokosuka

Masanobu Miyao

Masaharu Kinoshita

Mitsuharu Tai

Hirotaka Hamamura

Kimihisa Furukawa

Eiko Nakazawa

Kiyokazu Nakagawa

Mami Konomi

Shoji Hotta

Takatoshi Saito

Shunya Watanabe

Yusuke Morita

Takeshi Ogashiwa

Michiko Takahashi

Shigeo Shimomura

Yuzuru Mochizuki

Hiroyuki Okino

Hideo Koseki

Takuya Maruizumi

Shinichi Tao

Satoshi Inomoto

Katsuhiko Itasaka

Chisaburo Kimoto

Ryu Tanaka

A temperature abnormality of the power module is accurately detected. A power conversion device including a power semiconductor module with a switching element, includes: a gate driver circuit configured to drive a switching element and transmitting a response signal upon a switching operation of the switching element; a control unit device configured to output to a gate driver circuit an instruction signal for switching; a temperature detection unit configured to calculate a bonding temperature of the switching element based on a response signal to the instruction signal; and a calculation unit configured to determine a state of a power semiconductor module according to a bonding temperature calculated by the temperature detection unit and the response signal.

Power conversion device, motor control system, and diagnosis method for power conversion device

A diagnostic system for a power conversion apparatus including a semiconductor device and performing a switching operation for carrying and interrupting a main current to a main current is disclosed. This system includes a trigger circuit that acquires reference time for the switching operation; and a delay time calculation circuit that acquires first time at which the main current takes a first main current set value and second time at which the main current takes a second main current set value, and that detects numerical data about a difference between the first time and the reference time and numerical data about a difference between the second time and the reference time.

Diagnosis system for power conversion device, diagnosis method for semiconductor module, and power conversion device

A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

Scanning electron microscope and sample observation method

There is provided a charged particle beam apparatus capable of obtaining a high SN ratio with a small electron irradiation amount. The charged particle beam apparatus includes a charged particle detection device. The charged particle detection device detects an analog pulse waveform signal () in a detection of emitted electrons (1 event) when one primary electron enters a sample, converts the analog pulse waveform signal () into a digital signal (), perform a wave height discrimination () with the use of a unit peak corresponding electron, and outputs the digital signal () as a multilevel count value.

Charged particle bean device and information-processing device

A power converter is provided with a power semiconductor module having a switching element. The power converter includes a gate drive circuit, a first detection unit, a second detection unit, a time measuring unit, and an abnormality diagnostic unit. The gate drive circuit drives the switching element and outputs a feedback signal based on a switching operation of the switching element. The first detection unit detects a change in a feedback signal of an upper arm of the power converter. The second detection unit detects a change in a feedback signal of a lower arm of the power converter. The time measuring unit measures a difference between detection timings of a signal change by the first detection unit and a signal change by the second detection unit. The abnormality diagnostic unit performs diagnosis of the power converter based on a measurement result by the time measuring unit.

Power converter and diagnostic system thereof

An object of the present invention is to realize both of the accuracy of measuring the amount of secondary electron emissions and the stability of a charged particle beam image in a charged particle beam device. In a charged particle beam device, extraction of detected signals is started by a first trigger signal, the extraction of the detected signals is completed by a second trigger signal, the detected signals are sampled N times using N (N is a natural number) third trigger signals that equally divide an interval time T between the first trigger signal and the second trigger signal, secondary charged particles are measured by integrating and averaging the signals sampled in respective division times &#x394;T obtained by equally dividing the interval time T, and the division time &#x394;T is controlled in such a manner that the measured number of secondary charged particles becomes larger than the minimum number of charged particles satisfying ergodicity.

Charged particle beam device and charged particle beam measurement method

A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

Semiconductor inspection device including a counter electrode with adjustable potentials used to obtain images for detection of defects, and inspection method using charged particle beam

A charged particle beam apparatus makes it possible to acquire information in the cross-sectional direction (depth direction) of a sample having an internal structure in a nondestructive manner with reduced damage. Further, the apparatus makes it possible to analyze the depth and/or dimensions in the depth direction of the internal structure. The charged particle beam apparatus includes: a means for providing a time base for control signals; a means for applying a charged particle beam to a sample in synchronization with the time base and controlling an irradiation position; a means for analyzing the emission characteristics of an emission electron from the sample from a detection signal of the emission electron; and a means for analyzing the electrical characteristics or cross-sectional morphological characteristics of the sample based on the emission characteristics.

Charged particle beam apparatus and inspection method using the same

In a semiconductor inspection method using a semiconductor inspection device, by selecting an incident energy and a negative potential and scanning an inspection surface of a wafer with primary electrons to detect secondary electrons, a first inspection image is acquired, and a macro defect, stacking faults, a basal plane dislocation and a threading dislocation contained in the first inspection image are discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance. Moreover, by selecting the incident energy and a positive potential and scanning the inspection surface of the wafer with primary electrons to detect the secondary electrons, a second inspection image is acquired, and a threading screw dislocation of a dot-shaped figure contained in the second inspection image is discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance.

Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element

An automatic setting method of an observation condition to facilitate analysis of an image and a sample observation method by automatic setting in an observation method of a structure of a sample by the electronic microscope and an electronic microscope having an automatic setting function are provided. The method includes a step of irradiating a fixed position in an observation region with an intermittent pulsed electron beam; a step of detecting a time change of an emission electron from the sample by the intermittent electron beam; and a step of setting the observation condition of the electronic microscope from the time change of the emission electron.

Electronic microscope, setting method of observation condition of electronic microscope, and observation method using electronic microscope

The electrical charging by a primary electronic is inhibited to produce a clear edge contrast from an observation specimen (i.e., a specimen to be observed), whereby the shape of the surface of a sample can be measured with high accuracy. An observation specimen in which a liquid medium comprising an ionic liquid is formed in a thin-film-like or a webbing-film-like form on a sample is used. An electron microscopy using the observation specimen comprises: a step of measuring the thickness of a liquid medium comprising an ionic liquid on a sample; a step of controlling the conditions for irradiation with a primary electron on the basis of the thickness of the liquid medium comprising the ionic liquid; and a step of irradiating the sample with the primary electron under the above-mentioned primary electron irradiation conditions to form an image of the shape of the sample.

Observation specimen for use in electron microscopy, electron microscopy, electron microscope, and device for producing observation specimen

The present invention is characterized by an electron microscope which intermittently applies an electron beam to a sample and detects a secondary electron signal, wherein an arbitrarily defined detection time (T) shorter than the pulse width (Tp) of the applied electron beam is selected, and a secondary electron image is formed using the secondary electron signal acquired during the detection time. Consequently, it is possible to reflect necessary sample information including the internal structure and laminated interface of the sample in the contrast of an image and prevent unnecessary information from being superimposed on the image, thereby making it possible to obtain the secondary electron image with improved sample information selectivity and image quality.

Electron microscope and image capturing method using electron beam

There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus

It is an object of the present invention to provide a method of manufacturing an SOI wafer at low cost and with high yield. It is another object of the present invention to provide a semiconductor device including also bulk type MISFETs used as high voltage regions and a method of manufacturing the same without using complicated processes and increasing the size of a semiconductor chip. The method of manufacturing a semiconductor device comprises selectively epitaxially growing a single-crystal Si layer and continuously performing the epitaxial growth without bringing a substrate temperature increased during the growth to room temperature even once. An epitaxially grown surface is then etched and planarized. The substrate temperature is then cooled down to the room temperature.

Manufacturing method of semiconductor device

Growing community of inventors

Tokyo, Japan

Yoshinobu Kimura