Nippon Telegraph and Telephone Corporation

Tokyo Electron Limited

Nippon Telephone and Telegraph Corporation

Yoshinobu Arita

Nobuyoshi Awaya

Masaaki Sato

Koichi Ikeda

Masahiro Ogasawara

Hiromu Ishii

Masahiko Maeda

Takao Amazawa

Hiromitsu Kanbara

Kunio Saito

Hidenori Satoh

Toshihiko Kosugi

Kazuhito Sakuma

An object to be etched is loaded in a low-pressure vapor phase processing chamber, and then an etching gas obtained by adding a small amount of additive gas of oxygen or additive gas at least containing oxygen to a reaction gas used for etching is fed to the low-pressure vapor phase processing chamber so as to suppress a reaction between the wall of the low-pressure vapor phase processing chamber and the reaction gas. In this state, the object to be etched is dry-etched with the etching gas.

Dry etching method

According to a semiconductor substrate treatment method, a surface or vicinity of a semiconductor substrate is deactivated by exposing the semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited. A treatment is performed on the deactivated substrate surface. The treated substrate surface is activated by heating the semiconductor substrate.

Semiconductor substrate treatment method

Gold or copper is grown on a substrate by a chemical vapor deposition method using a .beta.-ketonato type metal complex of gold or copper as a starting material and introducing the starting material to the substrate using as a carrier gas a mixed gas composed of hydrogen and a substance which can bond to the starting material in a state where electron is donated from the substance to the starting material to form a molecular compound.

Apparatus for growing a thin metallic film

A chemical vapor deposition process for growing a thin metallic film of copper or gold on a substrate includes providing a starting material composed of a .beta.-ketonato type metal complex of gold or copper in a heated container; preparing a carrier gas for the starting material which is composed of hydrogen as a reducing agent and at least one electron donating substance which bonds to and forms a molecular compound with the starting material by donating an electron to the starting material; passing a flow of the carrier gas through the heated container containing the starting material to form the molecular compound in situ and provide a flow of a gas mixture; introducing the flow of the gas mixture into a reaction chamber in which a substrate is positioned; and growing gold or copper on the substrate by thermally decomposing the molecular compound and any remaining starting material under temperature conditions effective therefor.

Process for growing a thin metallic film

A selected chemical vapor deposition method includes the steps of arranging a substrate having a silicon surface and an insulator surface in a reaction chamber, supplying a gas consisting of a silicon hydride in said reaction chamber to reduce and remove a native oxide film on said silicon surface by said gas, and supplying a source gas in said reaction chamber to selectively form a film on only said silicon surface.

Selective chemical vapor deposition of a metallic film on the silicon

A thin film formation method includes the steps of holding a substrate in a reduced-pressure vapor phase reaction chamber having means for irradiating light in visible and ultraviolet ranges, supplying an organo-titanium compound containing a tri-azo group, and vapor-depositing a titanium nitride film on a surface of the substrate by an excitation reaction caused by light.

Tin thin film formation method

A process for growing a thin metallic film of gold or copper selectively on a predetermined area of a substrate. An organic complex or organometallic compound of gold or copper as a starting material is heated to evaporate the same, while a substrate having on the surface thereof a metal or a metallic silicide as a first material and an oxide or a nitride as a second material is heated at a temperature equal to or higher than the decomposition temperature, on the first material, of a vapor of the starting material. The vapor of the evaporated starting material is fed together with a reducing gas onto the heated substrate to selectively grow a thin metallic film of gold or copper only on the surface of the first material.

Process for selectively growing thin metallic film of copper or gold

A plasma etching apparatus a first cathode electrode, an anode electrode, an annular second cathode electrode, a magnetic field applying unit and high-frequency power sources. An object to be etched is placed on the first cathode electrode. The anode electrode is arranged opposite to the first cathode electrode so as to be separated therefrom and connected to a constant potential source. The second cathode electrode is located between the first cathode electrode and the anode electrode and substantially surrounds the first cathode electrode in an insulated state. The magnetic field applying unit includes coils which generate lines of magnetic force passing through the annular second cathode electrode substantially parallel to a surface of the first cathode electrode on which the object to be etched is placed. The high-frequency power sources are respectively connected to the first and second cathode electrodes to generate a plasma by gas discharge, thereby generating ions near the first and second cathode electrodes.

Plasma etching apparatus

A substrate structure utilized to fabricate a semiconductor device is constituted by a silicon substrate; an element region selectively formed on the silicon substrate and a relatively thick field oxide region formed adjacent to the element region; an element isolating region formed between the element region and the field oxide region, the element isolating region being in direct contact with the field oxide region; the element isolating region being provided with a relatively deep groove formed in the silicon substrate and having a relatively small width; a silicon oxide insulating film formed on the inner wall of the groove; and a silicon nitride insulating film disposed on the silicon oxide insulating film. The surfaces of the element region, the element isolating region and the field oxide region on the silicon substrate are formed substantially flat.

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Kanagawa, Japan

Yoshinobu Arita