Riken Corporation

National Institute for Materials Science

Other

Fuji Yakuhin Co., Ltd

Riken & Sii Nanotechnology Inc.

Yoshinobu Aoyagi

Hideki Hirayama

Hideki Miyazaki

Kazuhito Tsukagoshi

Kanna Aoki

Sohachi Iwai

Koji Matsumoto

Satoru Tanaka

Toshiaki Fujii

Koji Ishibashi

Seiichi Kobashi

Naoki Ashizawa

Masao Abe

Kunji Shigeto

Hiroshige Kato

Minuru Kawamura

Alekber Yu Kasumov

Misaichi Takeuchi

Akinobu Kanda

Ryuko Tokuyama

Hisao Miyazaki

Takuo Sugano

Syunsuke Odaka

Koichi Ishida

Souhachi Iwai

It is intended to provide a novel bisphosphonic acid compound or a salt thereof which shows a remarkable inhibitory effect on ectopic calcification, and a pharmaceutical composition comprising the same. The present invention provides a bisphosphonic acid compound represented by the following formula (1) or a pharmaceutically acceptable salt thereof: whereinrepresents a single bond or a double bond; A represents a saturated cyclic hydrocarbon or a saturated heterocyclic ring comprising a sulfur atom or an oxygen atom; and Rand Reach independently represent an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryloxy group, a haloalkoxy group, a haloalkyl group, a halogen atom or a hydrogen atom.

Bisphosphonic acid compound

Provided is a novel electronic device that comprises graphite, graphene or the like. An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.

Electronic device and method for producing electronic device

An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.

Ultraviolet light-emitting device in which p-type semiconductor is used

For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.

InAlGaN emitting light in ultraviolet short-wavelength region and process for preparing the same as well as ultraviolet light-emitting device using the same

A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.

Charged particle beam apparatus and method of forming electrodes having narrow gap therebetween by using the same

The present invention provides a practically effective three-dimensional photonic crystal, and a process for the production thereof as well as a probe used therefor wherein a three-dimensional photonic crystal comprises a plurality of two-dimensional photonic crystal plates each provided with through holes and different types of two-dimensional photonic crystals; a plurality of positioning members to be located in the above-described through holes in the plurality of the two-dimensional photonic crystal plates; and the above-described positioning members being located in the through holes in the two-dimensional photonic crystal plates adjacent to each other among the pluralities of two-dimensional photonic crystal plates to be laminated in such that the pluralities of the two-dimensional photonic crystal plates obtain a periodic structure in response to wavelengths of light.

Process for production of three-dimensional photonic crystal as well as probe used therefor

Three-dimensional photonic crystal

A method for the formation of a semiconductor layer by which a defect density of structural defects, particularly a dislocation density of threading dislocations in the resulting semiconductor layer can be remarkably reduced, so that hours of work can be shortened as well as a manufacturing cost can be reduced without requiring any complicated process comprises supplying a structural defect suppressing material for suppressing structural defects in the semiconductor layer onto a surface of the layer of a material from which the semiconductor layer is to be formed.

Method for the formation of semiconductor layer

A single-flux-quantum digital device includes a first superconducting line extended in a large ring, a second superconducting line connected to the first superconducting line, a superconducting single electron transistor for regulating a supercurrent flowing through the second superconducting line, and a small tunnel junction device for detecting a change in the supercurrent flowing through the first superconducting line. The first superconducting line is extended in a large ring. The second superconducting line divides the large ring into two small rings which are substantially the same in shape and area. The small tunnel junction device is connected to a point where the first and the second superconducting line are joined.

Single-flux-quantum digital device

Growing community of inventors

Wako, Japan

Yoshinobu Aoyagi