Kanto Denka Kogyo Co., Ltd.

Mitsubishi Electric Corporation

Taiyo Yuden Co., Ltd.

Yoshinao Takahashi

Korehito Kato

Yoshihiko Iketani

Katsuya Fukae

Tetsuya Fukasawa

Katsuyuki Horie

Yasuo Watanabe

Yukinobu Shibusawa

Hiroki Takizawa

Nobuhiro Sasaki

Mitsuharu Shimoda

Hideki Miyahara

Sho Kikuchi

Shinichi Kawaguchi

Yoshimasa Sakurai

Kazuhiro Sasaki

Takehiro Kato

Taiki Morikura

An elevator device includes a guide rail (), a car (), and a guide device (). The car () is movable in a horizontal direction at a specific height. The guide device () includes a supporting member () and a guide member (). The guide member () is displaceable to a first position for restricting movement of the car () in the horizontal direction and guiding up-down movement of the car () and a second position where the guide member () does not come into contact with the guide rail () when the car () moves in the horizontal direction.

Elevator device

Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Dry etching method or dry cleaning method

This invention provides a cleaning method that uses a cleaning gas composition for a semiconductor manufacturing device, including a monofluorohalogen compound represented by XF (in which X is Cl, Br or I) as the main component, and provides a method for removing unwanted film, such as a Si-containing deposit, attached to the interior of the processing room or processing vessel after a processing operation without damaging the interior of the processing room or processing vessel using such monofluorohalogen compound.

Cleaning method of semiconductor manufacturing device

Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiOor SiN, or a composite material of SiOand SiN over a mask material as well as processing into satisfactorily vertical processed shapes. It is possible, for example, to enhance selectivity over a mask material or other materials excluding an etching target, to reduce damage on sidewalls, and to suppress etching in the lateral direction by generating a plasma of a gas compound having a thioether skeleton represented by general formula (1) or a mixed gas thereof and etching a film consisting of a composite material or a single material, such as SiOor SiN, thereby depositing a protective film that contains sulfur atoms and has a lower content of fluorine atoms than the cases of using common hydrofluorocarbon gases:general formula (1): Rf&#x2014;S&#x2014;Rf&#x2003;&#x2003;(1)where Rfis a monovalent organic group represented by CHFand Rfis a monovalent organic group represented by CHF.

Plasma etching method using gas molecule containing sulfur atom

A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf&#x2014;COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or &#x2014;COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).

Atomic layer etching using acid halide

A chlorine fluoride feeding device and feeding process are provided that can stably generate industrially applicable chlorine fluoride (ClF), control flow rate, and provide continual feed. The feeding process of chlorine fluoride of this invention is a feeding process to feed chlorine fluoride generated by loading a gas that contains fluorine atoms and a gas that contains chlorine atoms to a flow-type heat reactor or a plasma reactor, and it can stably generate and safely feed chlorine fluoride for a long time by reacting chlorine fluoride that is difficult to pack at a high pressure, such that an amount that can be packed in a gas container such as a gas cylinder is limited, with two or more types of gas materials that can be packed safely in a gas container by liquefaction, or with such gas material and a solid material.

Feeding process of chlorine fluoride

A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z&#x2264;2x and y&#x2264;z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.

Gas composition for dry etching and dry etching method

Provided are an etching gas composition and an etching method which enable an object, such as a substrate to be etched, to be efficiently precision processed during thin film formation, and which enable efficient removal of an accumulated or adhered silicon-based compound, other than the object such as the substrate to be etched, by means of plasma etching. The etching gas composition is characterized by containing: (1) a fluorinated halogen compound represented by XF (X is Cl, Br or I) as a primary component; (2) F; (3) a fluorinated halogen compound represented by XF(X is Cl, Br or I, and n is an integer of 3 or higher); (4) HF; (5) O; and (6) at least one type of halogen gas molecule selected from among Cl, Brand I.

Etching gas composition for silicon compound, and etching method

In an elevator refurbishing method in which a hydraulic elevator in which a hydraulic jack is installed in an equipment installation zone is refurbished into a machine-roomless elevator that uses a two-to-one (2:1) roping method, the equipment installation zone being a region inside a hoistway on either a left side or a right side of a car when viewed from directly above, at least one guide rail from a pair of counterweight guide rails is installed in the equipment installation zone while leaving the hydraulic jack in position, the hydraulic jack is removed from the hoistway, the hoisting machine is installed in a lower portion of the equipment installation zone using a space that is created by removal of the hydraulic jack, and a car return sheave and a counterweight return sheave are installed on an upper portion of the counterweight guide rails.

Elevator refurbishing method

The dielectric ceramic composition is composed of a sintered body of ceramic particles containing Ba,Ti,O,as a major component. The ceramic particles may contain Ag in the form of solid solution at the rate of 0.2% to 3.0% by mole. the ceramic particles may further contain Ba,TiSi,O,so the BaTi,O,/Ba,TiSi,O,ratio is 1.5 to 9 BaTi,O,to 1 Ba,TiSi,O,. The dielectric ceramic composition can be sintered at a low enough temperature to enable a highly conductive metal such as Ag, Cu or the like to be burned and sintered integrally.

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Tokyo, Japan

Yoshinao Takahashi