Nec Corporation

Nec Corportion

Yoshinao Miura

Koichi Ishida

Shinji Fujieda

Youichiro Numasawa

In a semiconductor device that uses a low-resistance ohmic contact and which is suitable for high-speed operation, the ohmic contacts are formed by a single-crystal CoSi film that is formed on the (100) surface of a silicon substrate.

Semiconductor device and method for manufacturing same

A fabrication method of a semiconductor device that realizes a simplified contact formation process is provided. After a single-crystal silicon substrate having a main surface is provided, a dielectric film having a contact hole uncovering the main surface of the substrate is formed on the main surface of the substrate. Next, a silicon nitride film is formed on the main surface of the substrate in the contact hole of the dielectric film. Then, a metal film is formed on the dielectric film to be contacted with the silicon nitride film in the contact hole of the dielectric film. The metal film has a property that an atom of the metal film serves as diffusion species in a solid-phase silicidation reaction. The metal film, the silicon nitride film, the dielectric film, and the substrate are heat-treated to thereby form a metal silicide film due to a solid-phase silicidation reaction between the metal film and the substrate. The metal silicide film thus formed is contacted with the main surface of the substrate in the contact hole of the dielectric film. The metal silicide film has a single-crystal structure. Finally, an electrically conductive film is formed on the dielectric film to be electrically contacted with the main surface of the substrate through the metal silicide film in the contact hole of the dielectric film.

Semiconductor device with silicide contact structure and fabrication method thereof

A field effect transistor available for 1 giga-bit dynamic random access memory device has a two-layer gate structure consisting of a lower layer of nitrogen-containing silicon and an upper layer of refractory metal, and the nitrogen-containing silicon effectively prevents the gate oxide layer from alkaline metals diffused from the refractory metal.

Growing community of inventors

Tokyo, Japan

Yoshinao Miura