Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Other

Hitachi Ulsi Engineering Corp.

Yoshinao Kawasaki

Minoru Soraoka

Ken Yoshioka

Hironobu Kawahara

Ryooji Fukuyama

Yoshiaki Sato

Kazuo Nojiri

Hiromichi Enami

Hideo Aoki

Isamu Asano

Tsuyoshi Tamaru

Masakazu Sagawa

Nobuo Owada

Osamu Tsuchiya

Toru Kaga

Fumio Ootsuka

Kazuyoshi Torii

Mitsuaki Horiuchi

Jun Sugiura

Osamu Kasahara

Hidetsugu Ogishi

Makoto Ogasawara

Keisuke Funatsu

Yoshimi Torii

Masatoshi Tsuneoka

Takayoshi Kogano

Seiichirou Shirai

Atsushi Wakahara

Hiroyuki Akimori

Sinichi Suzuki

Nobuhiro Otsuka

Yoshihiro Ikeda

Tomotsugu Shimmyo

Tunehiko Tubone

Ken Tsugane

Seiichi Watanabe

Masayuki Kojima

Tetsunori Kaji

Takashi Yamada

Kazuyuki Suko

Michimasa Hunabashi

Keizo Kuroiwa

Saburo Kanai

Makoto Nawata

Yutaka Kakehi

Kazuaki Ichihashi

Katsuyoshi Kudo

Motohiko Yoshigai

Takashi Fujii

Masaharu Nishiumi

Tsunehiko Tsubone

Keizo Suzuki

Yoshifumi Ogawa

Minolu Soraoka

Shinichi Tachi

Shoji Ikuhara

Kazunori Tsujimoto

Muneo Furuse

Keiji Tada

Kado Hirobe

Saadyuki Okudaira

A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Vacuum processing apparatus and semiconductor manufacturing line using the same

Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Method and apparatus for processing samples

Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM

Apparatus for processing samples

Growing community of inventors

Yamaguchi, Japan

Yoshinao Kawasaki