Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Yoshinao Harada

Masaaki Niwa

Akihiro Yamamoto

Isao Miyanaga

Hiroaki Nakaoka

Shigenori Hayashi

Kazuichiro Itonaga

Nobuo Aoi

Ken Idota

Teruhito Oonishi

A semiconductor device includes: an active region located in an upper portion of a semiconductor substrate; a through-hole electrode penetrating the substrate, and made of a conductor having a thermal expansion coefficient larger than that of a material for the substrate; and a stress buffer region located in the upper portion of the substrate and sandwiched between the through-hole electrode and the active region. The stress buffer region does not penetrate the substrate and includes a stress buffer part made of a material having a thermal expansion coefficient larger than that of the material for the substrate and an untreated region where the stress buffer part is not present. The stress buffer part is located in at least two locations sandwiching the untreated region in a cross section perpendicular to a surface of the substrate and passing through the through-hole electrode and the active region.

Semiconductor device

In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same

A gate electrode is formed on a substrate via a gate insulating film. The gate insulating film includes a high dielectric constant film containing a metal, oxygen and hydrogen, and a lower barrier film formed below the high dielectric constant film and containing a metal, oxygen, silicon and nitrogen.

Semiconductor device and method for producing the same

With keeping an atmosphere including oxygen within a chamber and with a wafer kept at a low temperature, plasma generated within the chamber is biased toward the wafer, and the wafer is subjected to the plasma. A semiconductor layer exposed on the wafer is oxidized into an oxide film. Thus, an oxide film can be formed even at room temperature differently from thermal oxidation. This oxidation is applicable to recovery of an implantation protection insulating film having been etched in cleaning a photoresist film, relaxation of a step formed between polysilicon films, relaxation of a step formed within a trench and the like. Also, before removing a photoresist film used for forming a gate electrode including a metal, a contamination protection film can be formed by this oxidation with the photoresist film kept.

Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating film

With keeping an atmosphere including oxygen within a chamber and with a wafer kept at a low temperature, plasma generated within the chamber is biased toward the wafer, and the wafer is subjected to the plasma. A semiconductor layer exposed on the wafer is oxidized into an oxide film. Thus, an oxide film can be formed even at room temperature differently from thermal oxidation. This oxidation is applicable to recovery of an implantation protection insulating film having been etched in cleaning a photoresist film, relaxation of a step formed between polysilicon films, relaxation of a step formed within trench and the like. Also, before removing a photoresist film used for forming a gate electrode including a metal, a contamination protection film can be formed by this oxidation with the photoresist film kept.

Method of forming insulating film and method of fabricating semiconductor device

METHOD OF FORMING A SILICON-CONTAINING METAL-OXIDE GATE DIELECTRIC BY DEPOSITING A HIGH DIELECTRIC CONSTANT FILM ON A SILICON SUBSTRATE AND DIFFUSING SILICON FROM THE SUBSTRATE INTO THE HIGH DIELECTRIC CONSTANT FILM

There is disclosed a semiconductor device cleaning method involving placing a cleaning solution containing 24 wt. % sulfuric acid, 5 wt. % hydrogen peroxide, 0.02 wt. % hydrogen fluoride, 0.075 wt. % n-dodecylbenzenesulfonic acid, and water into a quartz processing vessel and heating to no more than 100&deg; C. A silicon wafer is immersed into the cleaning solution for 10 minutes and then washed by demineralized water for about 7 minutes. The surfaces of foreign particles on the wafer are etched by hydrogen fluoride, and n-dodecylbenzenesulfonic acid combines with the etched surfaces by sulfate ester bonding. The apparent diameter of the foreign particles increases and the repulsive force caused by zeta potential etc. increases, so that the foreign particles are unlikely to adhere to the surface of the silicon wafer permitting the foreign particles to be easily washed away in a water cleaning step.

Growing community of inventors

Kyoto, Japan

Yoshinao Harada