Fujitsu Corporation

Yoshimori Asai

Junichi Mitani

The semiconductor device comprises a first conductive pattern, a second conductive patternformed adjacent to the first conductive pattern, a first conductor plugformed below a prescribed region of the first conductive pattern, a second conductor plugformed over a prescribed region of the first conductive pattern, a third conductor plugformed below a prescribed region of the second conductive pattern, which is adjacent to a prescribed region of the first conductive pattern, a fourth conductor plugformed over a prescribed region of the second conductive pattern, a third conductive patternformed above the first conductive patternand connected to the second conductor plug, and a fourth conductive patternformed above the second conductive patternand connected to the fourth conductor plug. The fourth conductor plugis arranged a position which is offset from the second conductor plug. The conductor plugsare offset each other in the longitudinal direction of the interconnections, whereby the parts of the interconnections having an increased width can be distanced from each other. Thus, the interconnections can be arranged at a small pitch without using an ArF exposure system and a half tone phase shift mask, which are expensive. Accordingly, the semiconductor device of high integration is provided at low costs while ensuring high fabrication yields.

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Kawasaki, Japan

Yoshimori Asai