Hitachi Automotive Systems, Ltd.

Hitachi, Ltd.

Hitachi-high-technologies Corporation

Ps4 Luxco S.a.r.l.

Elpida Memory, Inc.

Hitachi High-tech Corporation

Other

Hitachi Astemo Ltd.

Yoshimitsu Yanagawa

Akira Kotabe

Masahiro Matsumoto

Hiroshi Nakano

Tomonori Sekiguchi

Riichiro Takemura

Takayuki Kawahara

Takamasa Suzuki

Naoshi Itabashi

Kazuo Ono

Itaru Yanagi

Kazuhiko Kajigaya

Yusuke Goto

Satoshi Asano

Yasuo Onose

Takahide Yokoi

Kenichi Takeda

Satoru Akiyama

Masahiko Ando

Takashi Anazawa

Kazumichi Imai

Kyoko Imai

Tatsuo Nakagawa

Ryo Imai

Makoto Saen

Shinichi Takayama

Kenta Imai

Toshiro Saito

Michiru Fujioka

Soichiro Yoshida

Kazuma Matsui

Tomomi Takahashi

Kiyoto Ito

Takenori Sato

Makiko Yoshida

Takamichi Muramatsu

Sonoko Migitaka

Yoshikazu Nara

Saaya Shimizu

A first modulation voltage is applied to a thin film. An amount of a change in the phase of a current carried through the thin film with respect to the phase of the first modulation voltage is compared with a threshold. Upon detecting that the amount of the change in the phase exceeds the threshold is detected, the application of the first modulation voltage is stopped. Thus, a nanopore is formed on the thin film at high speed.

Nanopore-forming method, nanopore-forming device and biomolecule measurement device

An object of the present invention is to provide a biomolecule measuring device that can decrease the influence of crosstalk between chambers. A biomolecule measuring device according to the present invention supplies, to electrodes equipped on chambers, voltages modulated differently to each other.

Biomolecule measuring device

The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a Si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film. The sensor device is also provided with a detection element that detects the temperature of the insulating film above the hollow section, the detection element is provided with a first silicon element and a second silicon element, and the first silicon element and the second silicon element are doped with different impurities, respectively.

Sensor device

In a protective circuit of a conventional electronic device, surge resistance is low and it is difficult to connect an external connection terminal of an integrated circuit directly to an external connection terminal of the electronic device or the like. A protective circuit of an electronic device according to the present embodiment includes an external connection terminalwhich is connected to an external signal; a wiring layerwhich connects the external connection terminaland a protective resistor; a protective resistorwhich protects an internal circuit from surges or noises input from the external connection terminal; slits which divide the protective resistor; current distribution resistors which are constituted by dividing the protective resistorby the slits; and MOS transistors which are connected to the current distribution resistors.

Electronic device having semiconductor device with protective resistor

To provide a gas sensor device having improved measurement accuracy. This gas sensor device is provided with: a sensor element that detects the concentration of a gas by means of heat dissipation from a heat generating body; and a cover with which the sensor element is covered. The cover has a plurality of ventilation sections, which are disposed by being separated with each other in the direction perpendicular to the flowing direction of the gas, and the sensor element is disposed between the ventilation sections.

Gas sensor device

Even when a positive/negative surge is applied to a power-supply line, occurrence of malfunction in a semiconductor device is lessened. In an in-vehicle semiconductor device, regulators convert an externally-supplied voltage to generate voltages. A voltage monitoring unit includes a voltage monitoring circuit and a switch, and monitors first to third voltages. An internal circuit has a processor operated by the voltage, and an oscillator operated by the voltage and generating a clock signal to be provided the processor. The voltage monitoring unit stops providing the clock signal to the processor when the voltage level of at least any one of the first to third voltages is below a set value. The voltage monitoring unit provides the clock signal to the processor when the voltage levels of all the first to third voltages exceed the set value.

In-vehicle semiconductor device

A resistance circuit is configured such that a P-type resistance section and an N-type resistance section are electrically connected in series, the P-type resistance section is configured with P-type diffusion layer resistance elements that are disposed to form a right angle with respect to each other and that are electrically connected in series, and the N-type resistance section is configured with N-type diffusion layer resistance elements that are disposed to form the right angle with respect to each other and that are electrically connected in series. Furthermore, the P-type diffusion layer resistance element is disposed along a &#x3c;100&#x3e; orientation direction of a semiconductor substrate, and the N-type diffusion layer resistance element is disposed along a &#x3c;110&#x3e; orientation direction of the semiconductor substrate. It is thereby possible to provide the resistance circuit, an oscillation circuit, and an in-vehicle sensor apparatus that reduce stress-induced characteristic fluctuations.

Resistance circuit, oscillation circuit, and in-vehicle sensor apparatus

In a sensor deviceaccording to the present invention, power is supplied from a control deviceto a power supply terminaland a ground terminalof the sensor devicevia a power supply line Vcc and a ground line Gnd, respectively, and a sensor output voltage is sent from a sensor output terminalto the control devicevia a sensor output line Vout. The control devicehas disposed therein a constant voltage sourcethat supplies a constant voltage to the sensor device, and a pull-up resistorconnected between the sensor output line Vout and the constant voltage source. The sensor devicecomprises: a physical quantity detection unitthat varies a voltage Vsen in accordance with a measured physical quantity; a regulatorthat generates a low voltage from a power supply voltage supplied from the power supply terminal; an open-collector operational amplifierthat operates with the low voltage supplied from the regulatorto control a voltage for the sensor output terminal; and resistor elementsthat together form a voltage divider circuit for subjecting the voltage for the sensor output terminalto voltage division.

A semiconductor chip having a pad, a protective element, and an internal circuit for providing a semiconductor chip having a protective circuit with high noise resistance, wherein the semiconductor chip is characterized in that the resistance value of metal wiring on a path reaching the pad and the protective element is higher than the resistance value of the protective element.

Semiconductor chip having on-chip noise protection circuit

To a biomolecule measuring apparatus, a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent is set. The semiconductor sensor has a plurality of cells which are arranged on a semiconductor substrate, and each of which detects ions, and a plurality of readout wires. Each of the plurality of cells has an ISFET which has a floating gate and which detects ions, a first MOSFET Mfor amplifying an output from the ISFET, and a second MOSFET Mwhich selectively transmits an output from the first MOSFET to a corresponding readout wire R. Each of the plurality of cells is provided with a third MOSFET Mwhich generates hot electrons in the ISFET and which injects a charge to the floating gate of the ISFET. Here, the second MOSFET and the third MOSFET are separately controlled.

Provided is a biomolecule measuring device capable of effectively reducing measurement noise occurring when measuring a biomolecule sample using a semiconductor sensor. This biomolecule measuring device generates a trigger to react a sample with a reagent after starting to send the reagent onto the semiconductor sensor that detects ion concentration (see FIG.).

Provided is a sensor device wherein malfunction due to a negative surge is suppressed. This sensor device is provided with: a sensor element wherein electrical characteristics change corresponding to physical quantities; a signal processing circuit that processes output signals of the sensor element; a first transistor element that supplies currents to the sensor element and the signal processing circuit; a control circuit that controls a base current of the first transistor element; a power supply terminal; and a ground terminal. The sensor device is characterized in that the control circuit is provided with a limiting section that limits a current flowing from the ground terminal toward a base terminal of the first transistor element.

Provided is an electronic device which can easily measure a standby current of an internal circuit of an electronic device after burn-in. The electronic device includes: a power source terminal; a regulator that generates a predetermined voltage from a voltage of the power source terminal; an internal circuit that is operated by an output voltage of the regulator; and a standby terminal through which the regulator and the internal circuit are set to a low power consumption state.

Electronic device that measures a standby current of a circuit after burn-in

In conventional sensor devices, it has been difficult to achieve both EMC resistance and ESD resistance, which are required at the output terminals of an automobile sensor device. A sensor deviceof the present embodiment comprises: a power supply terminalthat supplies power; a ground terminal; a sensor element, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuitthat processes an output signal output from the sensor element; and an output terminal that outputs the output signal processed by the signal processing integrated circuit. In addition, the signal processing integrated circuitcomprises: a signal processing circuitthat processes the output signal output from the sensor element; a resistance elementthat is connected between the output terminaland the signal processing circuit, and that is disposed on an insulating film; diode elementsthat are connected between the output terminaland the ground terminal, and that are serially connected with each other in opposite directions; and a capacitance elementthat is connected between the ground terminaland the signal processing circuitside of the resistance element

Sensor device including diode elements connected in series in opposite directions to each other

In the field of the next generation DNA sequencer, a method for integrating very high sensitive FET sensors having side gates and nanopores as devices used for identifying four kinds of base and for mapping the base sequence of DNA without using reagents, and a semiconductor device having selection transistors and amplifier transistors respectively corresponding to the FET sensors having side gates and nanopores respectively so as to be able to read the variation of a detection current based on the differences among the charges of the four kinds of base without deteriorating the detection sensitivity of the FET sensor, are presented.

Growing community of inventors

Tokyo, Japan

Yoshimitsu Yanagawa