Nippon Pillar Packing Co., Ltd.

Yoshimitsu Yamada

Kichiya Tanino

Toshihisa Maeda

The present invention provides relates to silicon carbide single-crystals and in particular to silicon carbide single-crystals produced by supplying superfine silicon dioxide particles and superfine carbon particles to nucleating silicon carbide crystals and reducing the silicon dioxide by the carbon. The silicon carbide single-crystals according to the present invention comprise silicon carbide single-crystals grown on nucleating silicon carbide crystals, which are prepared by supplying and sticking superfine silicon dioxide particles and superfine carbon particles onto the surface of nucleating silicon carbide crystals kept in a heated state in an inert gas atmosphere and reducing the silicon dioxide by the carbon on the surface of the nucleating silicon carbide crystals thereby allowing silicon carbide single-crystals to grow on the nucleating silicon carbide crystals.

Silicon carbide single-crystals

In single crystal SiC , growing single crystal SiC is integrally formed on a surface of a single crystal hexagonal (6H type) &agr;-SiC substrate used as a seed crystal. The number of micropipes A of the growing single crystal SiC is less than that of the micropipes B of the single crystal &agr;-SiC substrate , and the thickness t thereof is less than the thickness t of the single crystal &agr;-SiC substrate , thereby making it possible to obtain the high quality-single crystal SiC wherein the number of the micropipes per unit area is less, thereby decreasing the distortion in the neighborhood of the micropipes. This can provide the high-quality single crystal SiC which can be practically used as a substrate wafer for fabricating a semiconductor device.

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Osaka, Japan

Yoshimitsu Yamada