Murata Manufacturing Co., Ltd.

Yoshimitsu Ushimi

Hajime Yamada

Daisuke Nakamura

Hiroyuki Fujino

Tadashi Nomura

Hideki Kawamura

Masaki Takeuchi

Yukio Yoshino

Takayuki Tange

Ken-ichi Uesaka

Takashi Hayashi

Kenji Nishiyama

Keiichi Umeda

Koshi Himeda

Tetsuzo Hara

Naoko Aizawa

Masashi Kubota

A package board that includes an inductor layer having: a first magnetic layer including first magnetic particles and a resin; an inductor wiring that functions as an inductor in the first magnetic layer; and a second magnetic layer on at least one surface of the first magnetic layer, including second magnetic particles that are higher in average flatness than the first magnetic particles and a resin, the second magnetic particles having a shape where the dimension in a direction along the main surface of the second magnetic layer is longer than the dimension in the thickness direction of the second magnetic layer.

Package board

A module includes a substrate, metal layers and insulating layers laminated on the substrate, a bottom winding made of a metal directly contacting a first metal layer or a second metal layer, a first insulating layer on the bottom winding, a core on the first insulating layer, a second insulating layer on the core, a top winding made of the metal that is located on the core and a portion of the second insulating layer and that directly contacts the first metal layer or the second metal layer, and a third insulating layer on the top winding, electronic components that are located on the third insulating layer, where primary and secondary windings of the transformer are defined by portions of the bottom winding and the top winding and are located on opposite sides of the core from each other.

Integrated transformer module

A transformer includes a silicon substrate, a plurality of metal layers and a plurality of insulating layers laminated on the silicon substrate, a bottom winding of a metal contacting a first metal layer and a second metal layer of the plurality of metal layers, a first insulating layer on the bottom winding, a core on the first insulating layer, a second insulating layer on the core, a top winding of the metal that extends around the core and a portion of the second insulating layer, and a third insulating layer on the top winding. At least one of the top winding and the bottom winding is thicker than each of the plurality of metal layers.

Silicon transformer integrated chip

A magnetic sensor includes a substrate, and a magneto-resistive element portion which is provided on the substrate and has a predetermined magneto-sensitive direction, and in which a bias magnetic field is applied in a direction orthogonal or substantially orthogonal to the magneto-sensitive direction. The magneto-resistive element portion includes a magnetic layer having a negative magneto-striction constant, and stress-induced anisotropy of the magnetic layer develops in a direction parallel or substantially parallel to the direction of the bias magnetic field in response to a tensile stress act on the substrate in a direction parallel or substantially parallel to the magneto-sensitive direction.

Magnetic sensor and current sensor

An infrared sensor includes a first substrate made of a thermoelectric conversion material and a second substrate. The first substrate is supported by posts made of an electrode material while being spaced apart from the second substrate. A sensing electrode and lead portions connected thereto are provided on the first substrate. The sensing electrode and the lead portions are covered with an infrared-absorbing film. The posts are connected to the lead portions, and external terminal connection electrodes are connected to the posts.

Infrared sensor and method for producing same

A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiOand AlO, respectively, AlOhaving oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.

Method for manufacturing a piezoelectric resonator

An insulating film including an aluminum nitride film is provided on a support substrate to be supported thereby. Then, a lower electrode, a piezoelectric thin film, and an upper electrode are provided in that order on the aluminum nitride film. The piezoelectric film is disposed between the lower electrode and the upper electrode which oppose each other. Furthermore, the aluminum nitride film is subjected to a plasma treatment in an oxygen-containing atmosphere to form an oxide layer on the aluminum nitride film, the oxide layer being made smoother than the aluminum nitride film.

Growing community of inventors

Omihachiman, Japan

Yoshimitsu Ushimi