Hitachi, Ltd.

Yoshimitsu Sasaki

Satoshi Nakamura

Naoki Chinone

Takashi Kajimura

Michiharu Nakamura

Ichiro Ikushima

Katuaki Chiba

Ryoichi Ito

In a semiconductor laser device of the type which includes at least one laminate of a first dielectric layer and a second dielectric layer on at least one of the two facets of a resonator and in which the refractive index of the first dielectric layer is lower than that of the second dielectric layer, the improvement wherein the second dielectric layer consists of an amorphous material containing silicon and hydrogen at its essential constituent elements.

Semiconductor laser device having facets provided with dielectric layers

A mount for a light emitting device, which includes a first silicon substrate provided with first holding grooves of trapezoidal cross-section for mounting optical parts arranged in the vicinity of the light emitting plane of a light emitting element and a positioning groove for the light emitting element on the surface thereof, a second silicon substrate provided with second holding grooves having a trapezoidal cross-section similar to that of the first grooves for holding the optical parts and a hole portion for inserting the light emitting element, and a covering member for air tightly covering the hole portion, whereby the optical parts and the light emitting element of the light emitting device are tightly sealed by the above-stated means. The first and second holding grooves have the silicon crystal plane of (111) as both the side surfaces of their trapezoidal cross sections, and extend in the silicon crystal orientation of &lt;110&gt;.

Mount for a light emitting device

Growing community of inventors

Tokyo, Japan

Yoshimitsu Sasaki