Sharp Kabushiki Kaisha Corporation

National Institute of Advanced Industrial Science and Technology

Yoshimitsu Nakashima

Hitoshi Aoki

Yasushi Nagamune

Toshio Yoshida

Toshitaka Ota

Toshihisa Gotoh

Kohji Kobayashi

Toshio Fukai

Yoshinobu Kanazawa

Takashi Tokizaki

A light detecting device includes: an optical filter () that transmits a first wavelength light having a wavelength in a first wavelength range, a second wavelength light having a wavelength in a second wavelength range, . . . , and an n-th wavelength light having a wavelength in an n-th wavelength range (n is an integer); an optical sensor () that detects at least one of a first wavelength light intensity of the first wavelength light, a second wavelength light intensity of the second wavelength light, . . . , and an n-th wavelength light intensity of the n-th wavelength light; and an analysis unit () that estimates a light intensity of light having a wavelength in a wavelength range other than at least one of the first wavelength range, the second wavelength range, . . . , and the n-th wavelength range based on at least one of the first wavelength light intensity, the second wavelength light intensity, . . . , and the n-th wavelength light intensity. A correlative relationship exists between a light intensity of light having a wavelength in the at least one wavelength range and the light intensity of the light having the wavelength in the wavelength range other than the at least one wavelength range.

Light detecting device, solid-state image capturing apparatus, and method for manufacturing the same

A solid-state image capturing apparatus has a plurality of light receiving sections for performing photoelectric conversion on incident light to generate a signal charge, a charge transfer section provided along a light receiving section arranged in a column direction among the plurality of light receiving sections, for transferring signal charges generated in the light receiving section arranged in the column direction to a predetermined direction, and at least two layers of charge transfer electrodes provided on the charge transfer section via an insulation film, where a plane view width readable from the light receiving section is 50% to the whole edge of the edge of the light receiving section on the charge transfer section side.

Solid-state image capturing apparatus

A method for manufacturing a solid-state image capturing device according to the present invention, in which from a plurality of light receiving sections for photoelectrically converting incident light into signal electric charge, the signal electric charge is read to an electric charge detection section through transfer sections located under respective reading gate electrodes, each electric charge detection being shared by each of the plurality of light receiving sections, the method including: transfer section impurity region forming step of performing an ion implantation process from an ion implantation direction wherein the location of an edge surface of an impurity region of the transfer section and the location of an edge surface of the reading gate electrode corresponding to the impurity region match each other at each reading gate electrode.

Solid-state image capturing device, manufacturing method for the same and electronic information device

A solid-state imaging device includes a semiconductor substrate, a light shielding section having an aperture for partially shielding light incident on a surface of the semiconductor substrate, a light reception section for converting the light which is incident on the surface of the semiconductor substrate through the aperture to an electric charge, and a passivation section having a substantially flat top surface and overlying the light shielding section, the light reception section and the aperture.

Solid-state imaging device and method for producing the same

Growing community of inventors

Nara, Japan

Yoshimitsu Nakashima