Kobe Steel, Ltd.

Yoshimitsu Ikari

Hiroshi Tamagaki

Toshimitsu Kohara

Naoki Ohba

Takeshi Sakurai

A glass film transfer apparatus includes a wind-off section that winds off the glass film from a roll around which the glass film is wound, a long interleaf being laminated on the glass film; a glass film transfer section that transfers the glass film which is wound off from the wind-off section and is separated from the interleaf; a take-up section that takes up the glass film transferred by the glass film transfer section in the form of roll, while laminating the long interleaf on the glass film; and an interleaf transfer section that carries out the interleaf separated from the glass film which is wound off from the wind-off section, and carries in the interleaf toward the take-up section. Furthermore, the glass film transfer apparatus includes a take-up adjusting mechanism that adjusts a take-up state of the interleaf and the glass film in the take-up section.

Glass film transfer apparatus

In forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, film formation is carried out intermittently in a plurality of substeps while restricting a thickness of the film formed in each substep to at most 5 nm. A turntable is disposed to face a direction of sputtering of the aluminum metal target and the substrates are fixed to the turntable.

Method of producing &#x3b1; crystal structure-based alumina films

The present invention provides a process for producing an alumina coating comprised mainly of &#x3b1; crystal structure on a base material.

Process for producing alumina coating composed mainly of &#x3b1;-type crystal structure

The present invention provides a method for reactive sputtering in which a reactive sputtering apparatus including a sputtering vaporization sourceprovided with a metal target disposed in a vacuum chamber, a sputtering power sourceto drive the sputtering vaporization source, and an introduction mechanismto introduce an inert gas for sputtering and a reaction gas for forming a compound with sputtered metal into the vacuum chamberis used, and reactive sputtering film formation is performed on a substratedisposed in the above-described vacuum chamber, wherein the method includes the steps of performing constant-voltage control to control the voltage of the above-described sputtering power sourceat a target voltage Vs and, in addition, performing target voltage control at a control speed lower than the speed of the above-described constant-voltage control, the target voltage control operating the above-described target voltage Vs in order that the spectrum of plasma emission generated forward of the above-described sputtering vaporization sourcebecomes a target value.

Reactive sputtering method and device

For forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, a method of producing &#x3b1; crystal structure-based alumina films efficiently includes as an early film formation, forming films under conditions suited for formation of &#x3b1; crystal structure alumina. For example the forming forms films of &#x3b1;crystal structure alumina in a poisoning mode discharge condition only in an early stage of film formation.

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Hyogo, Japan

Yoshimitsu Ikari