Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Yoshimi Tanaka

Hirotsugu Hattori

Kazuo Fujimoto

Eiiti Kosoegawa

Yuichiro Takayama

A method of manufacturing semiconductor devices is provided which comprises the steps of depositing a coating of platinum on the surface of a silicon substrate prior to the formation of a plated nickel layer thereon, plating a layer of nickel on the silicon substrate coated with platinum, and then subjecting the structure to the process of heat treatment to thereby cause the platinum to diffuse into the silicon substrate, whereby the platinum acts to increase the adhesion strength of the plated nickel layer on the silicon substrate and further the platinum element diffused into the silicon substrate serves as a lifetime killer of carriers to thereby improve the switching characteristic of the semiconductor device.

Method of manufacturing semiconductor devices

A cathodic protection, anticorrosive circuit comprises a diode connection of a transistor or a Schotkky diode interconnected between a buried structure to be protected and a galvanic anode or the like so that even when the difference in potential between them is relatively low, an effective forward or anticorrosion current may flow while positively preventing the reverse current which causes the corrosion of the buried structure.

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Kyoto, Japan

Yoshimi Tanaka