Mitsubishi Denki Kabushiki Kaisha

Yoshimi Kinoshita

Masao Oda

Kazuo Yoshida

Katsuhisa Kitano

Hiroshi Ohnishi

Takeshi Iwamoto

Shigeo Sasaki

Yoshihiko Kusakabe

Kouichirou Tsutahara

Nobuyuki Kosaka

Toshiyuki Kobayashi

Toshihiko Noguchi

Kenichiro Yamanishi

Taizo Eshima

Tomoyuki Kanda

Hideki Komori

Toru Takahama

Hiroshi Koizumi

Kenji Yoshizawa

Masahiro Hayama

Yoshiyuki Goto

Masao Koshinaka

Hidenobu Murakami

Tatsuya Iwasa

Hiroaki Tobuse

Yasushi Hisaoka

Yoshio Yamane

Takashi Ishii

Toyomi Osige

It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer (1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.

Semiconductor producing apparatus, and wafer vacuum chucking device, gas

It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer(1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.

Semiconductor producing apparatus comprising wafer vacuum chucking device

An inspection method and an inspection apparatus for the component members of the cathode-ray tube are disclosed. An inspection apparatus composed of normal members other than an object of inspection is prepared at the time of inspecting the phosphor screen of the screen panel, the electron gun or the shadow-mask constituting the cathode-ray tube. In advanced to assembling the cathode-ray tube, the object of inspection is mounted on the inspection apparatus, so that the conformance or rejection of the object of inspection is decided from the illuminated condition of the phosphor screen by irradiating electron beams thereon.

Method of inspection for cathode-ray tube component members and

A semiconductor film production apparatus includes a reaction vessel for containing a substrate and including a gas supply port for supplying a reaction gas to the vessel, a gas discharge port for discharging the reaction gas from the vessel after reaction, and a light-transmitting glass window; a light source disposed outside the reaction vessel for irradiating a substrate in the reaction vessel through the light-transmitting glass window to heat the substrate; a cylindrical substrate holder disposed in the reaction vessel for holding the substrate with a first surface facing the light source and a second surface, opposed to the first surface, exposed to the reaction gas; a ring plate having a central opening with an area smaller than the substrate and an outside diameter dividing the reaction vessel into two compartments, the ring plate contacting the first surface of the substrate; a carrier gas supply port for introducing a carrier gas between the substrate and the light-transmitting glass window; and a reaction gas supply nozzle disposed in the substrate holder connected to said gas supply port and opposing the second surface of the substrate.

Apparatus for producing semiconductor film

An apparatus for forming a thin film on a substrate by bringing a first gas and a second gas into reaction with each other in a reaction chamber near the surface of the substrate in the reaction chamber. The apparatus has a plasma generating chamber disposed adjacent to the reaction chamber for generating a plasma of the first gas in a predetermined direction. A first gas inlet is provided at the boundary between the plasma generating chamber and the reaction chamber and formed to extend in the predetermined direction, while a second gas inlet is provided in the vicinity of the first gas inlet and extended in the predetermined direction. The apparatus further has a first gas supplying device for introducing the first gas into the plasma generating chamber and for introducing the first gas activated by a plasma in the plasma generating chamber into the reaction chamber through the first gas inlet, and second gas supplying device for supplying the second gas into the reaction chamber through the second gas inlet. A first flow settling device having plates disposed transverse to the flow of the first gas is positioned between the first gas inlet and plasma chamber. A second flow settling device may be located between the second gas supplying device and second gas inlet.

Thin film forming apparatus having a gas flow settling device

Apparatus for forming a thin film on a substrate surface by a CVD (Chemical Vapor Deposition) method which includes diffusing pipes for diffusing and supplying a first reactive gas, and uniformizing plates for supplying uniformly an active species formed through excitation of a second reactive gas. The first reactive gas and the active species are mixed uniformly with each other, and the resultant uniform mixture is supplied uniformly to the substrate surface, whereby a uniform film deposition rate is obtained in a reaction zone in which the thin film is formed, and a uniform thin film is formed over the entire substrate surface even when the area of the substrate surface is large.

Apparatus for forming thin film

Semiconductor producing apparatus

Growing community of inventors

Amagasaki, Japan

Yoshimi Kinoshita