Hitachi, Ltd.

Fujitsu Hitachi Plasma Display Limited

Hitachi-high-technologies Corporation

Hitachi High-tech Science Corporation

Other

Hitachi High-tech Corporation

Fujitsu Corporation

Hitachi Consumer Electronics Co., Ltd.

Hitachi Plasma Patent Licensing Co., Ltd.

Yoshimi Kawanami

Kaoru Umemura

Satoshi Tomimatsu

Yuichi Madokoro

Yasunori Doi

Shinichi Matsubara

Masayuki Shibata

Hiroyasu Shichi

Yasuhiko Kunii

Tohru Ishitani

Fumihiro Namiki

Nobuyuki Hori

Hiroyuki Muto

Atsuo Ohsawa

Osamu Toyoda

Toshiyuki Nanto

Koji Ohira

Yuuichi Madokoro

Yusuke Yajima

Keizo Suzuki

Tsuyoshi Ohnishi

Kazunori Ishizuka

Hironori Moritani

Akihiro Fujinaga

Yoichi Ose

Hiroshi Kajiyama

Tomihiro Hashizume

Tadayoshi Kosaka

Norihiro Uemura

Tatsutoshi Kanae

Yoshimi Shirakawa

Kazuhide Iwasaki

Michinobu Mizumura

Akira Shimase

Nobuyuki Takahashi

Hifumi Tamura

Fumikazu Itoh

Junzou Azuma

Kenichi Yamamoto

Takashi Kamimura

Yuuichi Hamamura

Ikuo Ozaki

Masahiro Sawa

Tadashi Otaka

Ryohei Satoh

Noriaki Arai

Akio Yoneyama

Shinji Kanagu

Akihiro Fujimoto

Yasuhiro Wakabayashi

Atsushi Yokoyama

Yoko Nakajima

Hideo Todokoro

Hisashi Takano

Hiroyuki Tanaka

Masaaki Futamoto

Tomokatsu Kishi

Kenetsu Yokogawa

Yasunobu Hashimoto

Akira Nakazawa

Yukio Honda

Hitoshi Hirakawa

Norihide Saho

Masahiko Hiratani

Kazumasa Takagi

Shigeyuki Hosoki

Tatsumi Mizutani

Toshiyuki Aida

Masaji Ishigaki

Tokuumi Fukazawa

Tomokazu Kozakai

Tetsuya Sakamoto

Hideki Harada

Hiroshi Oba

Hiroyasu Kaga

Naoki Itokawa

Katsuki Miyauchi

Hiroyuki Nakahara

Takashi Shiizaki

Takahiro Takamori

Michifumi Kawai

Shirun Ho

Kunio Takayama

Masahiro Yamaoka

Takayuki Kobayashi

Tomohiko Murase

Tadashi Furukawa

Hiroyuki Mutoh

Shoichi Iwanaga

Ken-ichi Yamamoto

Tooru Habu

Atsushi Kobaru

A method of manufacturing an emitter is disclosed. The method enables a crystal structure of the tip of the front end of the emitter to return to its original state with high reproducibility by rearranging atoms in a treatment, and enables a long lasting emitter to be attained by suppressing extraction voltage rise after the treatment. As a method of manufacturing an emitter having a sharpened needle-shape, the method includes: performing an electropolishing process for the front end of an emitter material having conductivity to taper toward the front end; and performing an etching to make the number of atoms constituting the tip of the front end be a predetermined number or less by further sharpening the front end through an electric field-induced gas etching having constantly applied voltage, while observing the crystal structure of the front end, by a field ion microscope, in a sharp portion having the front end at its apex.

Method of manufacturing emitter, emitter, and focused ion beam apparatus

An Hion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The Hion can be obtained by use of a probe current within a voltage rangearound a second peakoccurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.

Field ionization source, ion beam apparatus, and beam irradiation method

An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode. A pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein.

Ion beam device and cleaning method for gas field ion source

The focused ion beam apparatus includes: a vacuum container; an emitter tip disposed in the vacuum container and having a pointed front end; a gas field ion source; a focusing lens; a first deflector; a first aperture; an objective lens focusing the ion beam passing through the first deflector; and a sample stage. A signal generator responding to the ion beam in a point-shaped area is formed between the sample stage and an optical system including at least the focusing lens, the first aperture, the first deflector, and the objective lens, and a scanning field ion microscope image of the emitter tip is produced by matching a signal output from the signal generator and scanning of the ion beam by the first deflector with each other.

Focused ion beam apparatus

Disclosed is a method of manufacturing an emitter in which the tip of the emitter can be formed into a desired shape even when various materials are used for the emitter. The method includes performing an electrolytic polishing process of polishing a front end of a conductive emitter material so that a diameter of the front end is gradually reduced toward a tip; performing a first etching process by irradiating a processing portion of the emitter material processed by the electrolytic polishing process with a charged particle beam; performing a sputtering process by irradiating the pointed portion formed by the first etching process with a focused ion beam; and performing a secondary etching process of further sharpening the tip by an electric field induced gas etching processing while observing a crystal structure of the tip of the pointed portion processed by the sputtering process using a field ion microscope.

Method of manufacturing emitter

According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including Hions and an operation mode of performing irradiation with an ion beam most including ions heavier than the H.

Ion beam apparatus

In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

Ion beam device

In this invention, vibrations generated by a freezer from a cooling mechanism for cooling an ion source emitter tip are prevented from being transmitted to the emitter tip as much as possible, while the cooling capability of the cooling mechanism is improved widely. The ion beam device () is equipped with: an ion source housing () provided with an emitter tip () and defining an ion source chamber () supplied with an ionization gas or gas molecules; a gas pot () provided in the ion source chamber () so as to be thermally connected to the emitter tip () and accommodated so as to have no direct physical contact with a cooling stage () of a freezer (); and a spacer () provided on the peripheral surface of the cooling stage () housed by the gas pot () and maintaining a given interval or greater between the peripheral surface of the cooling stage () and the internal peripheral surface of the gas pot ().

A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.

Ion beam apparatus and ion beam irradiation method

Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation.

Ion beam system

The objective of the present invention is to provide an ion beam device capable of forming a nanopyramid stably having one atom at the front end of an emitter tip even when the cooling temperature is lowered in order to observe a sample with a high signal-to-noise ratio. In the present invention, the ion beam device, wherein an ion beam generated from an electric field-ionized gas ion source is irradiated onto the sample to observe or process the sample, holds the temperature of the emitter tip at a second temperature higher than a first temperature for generating the ion beam and lower than room temperature, sets the extraction voltage to a second voltage higher than the first voltage used when generating the ion beam, and causes field evaporation of atoms at the front end of the emitter tip, when forming the nanopyramid having one atom at the front end of the emitter tip.

Ion beam device and emitter tip adjustment method

Provided is a charged particle beam microscope which has a small mechanical vibration amplitude of a distal end of an emitter tip, is capable of obtaining an ultra-high resolution sample observation image and removing shaking or the like of the sample observation image. A gas field ion source includes: an emitter tip configured to generate ions; an emitter-base mount configured to support the emitter tip; a mechanism configured to heat the emitter tip; an extraction electrode installed to face the emitter tip; and a mechanism configured to supply a gas to the vicinity of the emitter tip, wherein the emitter tip heating mechanism is a mechanism of heating the emitter tip by electrically conducting a filament connecting at least two terminals, the terminals are connected by a V-shaped filament, an angle of the V shape is an obtuse angle, and the emitter tip is connected to a substantial center of the filament.

Ion source and ion beam device using same

Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode () and the temperature of a gas injection port part () of a gas supply unit.

Gas field ionization ion source and ion beam device

The ionized gas supplied to the emitter tip of a gas field ionization ion source is cooled and purified to enable supplying a reliable and stable ion beam. Impurities contained in the ionized gas destabilize the field ionization ion source. The invention is configured to include a first heat exchanger thermally connected to a part of the field ionization ion source, a cryocooler capable of cooling a second gas line and a cold head, the second gas line being connected to the first heat exchanger and circulating a refrigerant, and a second heat exchanger that cools the first and second gas lines and is connected to the cold head.

Charged particle microscope

Growing community of inventors

Kokubunji, Japan

Yoshimi Kawanami