Kokusai Electric Corporation

Yoshimasa Nagatomi

Hirohisa Yamazaki

Kenichi Suzaki

Masakazu Shimada

Yukinao Kaga

Takuya Joda

Takeshi Kasai

Atsushi Morikawa

Toru Kagaya

Kazuki Nonomura

Madoka Tanaka

Described herein is a technique capable of improving characteristics of a film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times.

Non-transitory computer-readable recording medium, substrate processing apparatus and substrate processing method

There is provided a technique that includes a process container where a plurality of substrates to be processed is arranged in an inside of the process container; and a gas injector including a pipe extending along a direction in which the plurality of substrates is arranged, and configured to supply a gas into the process container, wherein the gas injector includes at least one first injection hole installed along a longitudinal direction of the pipe in a section where the plurality of substrates is arranged, and configured to supply the gas, and a plurality of second injection holes having an area smaller than a flow path cross-sectional area of the pipe, and installed to be opened obliquely to the longitudinal direction at a tip of the pipe.

Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and gas injector

According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: forming an oxide film containing a predetermined element on a surface of a substrate provided with a pattern formed thereon by repeatedly performing a cycle including: (a) forming a first layer containing the predetermined element by supplying a source gas containing the predetermined element from an outer periphery of the substrate toward the surface; and (b) forming an oxide layer containing the predetermined element by supplying an oxidizing gas from the outer periphery toward the surface, wherein (a) and (b) are performed non-simultaneously. A supply time of the oxidizing gas is selected such that a thickness distribution of the oxide film becomes a predetermined distribution.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Method of manufacturing semiconductor device, non-transitory computer-readable recording medium, substrate processing apparatus and substrate processing method

A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Vaporizer, substrate processing apparatus and method for manufacturing semiconductor device

Gas injector for substrate processing apparatus

Substrate processing apparatus, method for manufacturing semiconductor device and vaporizer

By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus

Growing community of inventors

Toyama, Japan

Yoshimasa Nagatomi