Kabushiki Kaisha Toshiba

Yoshimasa Kudo

Shinjiro Kojima

A semiconductor device comprises a semiconductor element having a PN junction, a first connector having a first connection surface rising in an embossing manner, connected to a first surface of the semiconductor element via a solder layer at the first connection surface, a second connector having a second connection surface rising in an embossing manner, connected to a second surface of the semiconductor element via a solder layer at the second connection surface.

Mold-type semiconductor device

A resin sealing type semiconductor apparatus includes semiconductor devices having electrodes. A plurality of leads include inner leads and outer leads, the former connected to the electrodes of the semiconductor devices by thin metal wires. A sealing resin layer covers at least the semiconductor devices and the inner leads. The outer leads, which are led out in one direction from the sealing resin layer, have two different types or more of pitches, the number of the pitches of each type being two or greater.

Growing community of inventors

Yokohama, Japan

Yoshimasa Kudo