Jx Nippon Mining Metals Corporation

Jx Metals Corporation

Yoshimasa Koido

Kazuyuki Satoh

Hideyuki Takahashi

Yasushi Morii

An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 μm or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 μm or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.

Sb—Te-based alloy sintered compact sputtering target

A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.

Sputtering target and production method therefor

Sb&#x2014;Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at %, a Te content of 20 to 60 at %, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 &#x3bc;m or less. An object of this invention is to improve the texture of the Sb&#x2014;Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.

Sputtering target of sintered Sb&#x2014;Te-based alloy

A sputtering target containing 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr, and remainder being Al, wherein a structure of the sputtering target is comprise of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase and a Zr phase. The present invention aims to provide an Al&#x2014;Te&#x2014;Cu&#x2014;Zr-based alloy sputtering target capable of effectively suppressing the degradation of properties caused by compositional deviation, as well as a method of manufacturing the same.

Sputtering target comprising Al&#x2014;Te&#x2014;Cu&#x2014;Zr-based alloy and method of manufacturing same

An Al&#x2014;Te&#x2014;Cu&#x2014;Zr alloy sputtering target, comprising 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr and the remainder of Al, wherein a Te phase, a Cu phase and a CuTe phase are not present in a structure of the target. An object of the present invention is to provide an Al&#x2014;Te&#x2014;Cu&#x2014;Zr alloy sputtering target capable of effectively reducing particle generation, nodule formation and the like upon sputtering and further capable of reducing oxygen contained in the target.

Sputtering target comprising Al&#x2014;Te&#x2014;Cu&#x2014;Zr alloy, and method for producing same

A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu&#x2014;Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency.

Sputtering target-backing plate assembly, and its production method

A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm/mper 24 h at 1 atm or less and a moisture vapor transmission rate of 0.1 g/mper 24 h or less, and, after charging the target and the powder, the vacuum pack is subject to vacuum suction and sealing for storage. This invention aims to provide technology for enabling the long-term storage of a sputtering target in a usable state by devising the method of storing a target made of an oxide of lanthanum as a rare earth metal, and thereby inhibiting the pulverization phenomenon of the target caused by the hydration (hydroxylation) of such target due to residual air or the inclusion of air, and the pulverization phenomenon caused by the formation of carbonate.

Method of storing lanthanum oxide target, and vacuum-sealed lanthanum oxide target

Provided is a hybrid silicon wafer comprising a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer. Also provided is a method for manufacturing a hybrid silicon wafer having a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer, wherein a part of the sintered polysilicon is hollowed, a single crystal ingot is inserted into the hollowed portion, these are mutually bonded through thermal diffusion bonding based on HIP to prepare a complex of the sintered polysilicon and the single-crystal silicon ingot, and the complex is sliced. Thereby provided are a hybrid silicon wafer comprising functions of both the polysilicon wafer and the single-crystal wafer, and a method for manufacturing such a hybrid silicon wafer.

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Ibaraki, Japan

Yoshimasa Koido