Kabushiki Kaisha Toshiba

Yoshimasa Kawase

Kyoichi Suguro

Hiroshi Itokawa

Haruko Akutsu

Takeshi Shibata

Atsushi Murakoshi

Toshihiko Iinuma

Hisato Oyamatsu

Osamu Fujii

Katsumi Rikimaru

Tatsuya Shima

A measuring device measures a gate length of a plurality of gate electrodes formed on a wafer. A calculation device calculates data of an ion implantation dosage for making uniform a threshold voltage in a wafer surface on the basis of distribution of the gate length in a wafer surface measured by the measuring device. The ion implantation device implants ions into the wafer on the basis of the data of the ion implantation dosage calculated by the calculation device.

Manufacturing system for semiconductor device capable of controlling variation in electrical property of element in wafer surface and method for manufacturing the semiconductor device

A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.

Method of manufacture of semiconductor device

A method of manufacturing a semiconductor device using a wafer emissivity calculated from a wafer reflectivity to calculate a wafer temperature and to calculate target values for heat source optical intensities provided to a plurality of heat sources which heat the wafer and a substrate peripheral structure.

Method and apparatus for manufacturing a semiconductor device

An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

Ion implanter and method of manufacturing semiconductor device

An apparatus for evaluating semiconductor material having a pump laser configured to irradiate a pump beam modulated at a modulation frequency on a semiconductor wafer, a probe laser configured to irradiate a probe beam on the semiconductor wafer, and a detector configured to detect a reflection of the probe beam from the semiconductor wafer.

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Yokohama, Japan

Yoshimasa Kawase