Matsushita Electric Industrial Co., Ltd.

Adv Antest Corporation

Kobe Steel, Ltd.

Other

Mitsubishi Jukogyo Kabushiki Kaisha

Osaka Gas Company Limited

Takenaka Corporation

Avantest Corporation

Yoshimasa Ito

Mutsuaki Murakami

Sohji Tsuchiya

Atsushi Omote

Yukihiro Saito

Katsuhiko Namiki

Akio Yamashita

Akira Fujishima

Kazuhito Hashimoto

Toshio Saito

Hiroshi Sakata

Kenji Akami

Shiro Asakawa

Takatoshi Ogawa

Nobuyuki Nagai

Eiichiro Takemasa

Takashi Daikoku

Tatsuya Yasunaga

Soji Tsuchiya

Sadashi Higuchi

Sadatoshi Ohno

Shoji Ueda

Atsuyuki Doi

Yorimasa Takeda

Yasuo Moriguchi

Fumio Kamikubo

Shirow Asakawa

Akira Hiromoto

Toshihiro Ichihashi

Shoji Shimizu

Atsumichi Kushibe

Takashi Kato

Kouichi Shiroyama

An apparatus comprises: an engagement shaft able to engage with a bottom surface of a DSA and held linear movably; an air cylinder supplying a drive force for linearly moving the engagement shaft; and a link mechanism interposed between the air cylinder and the engagement shaft and transmitting the drive force input from the actuator to the engagement shaft, and the link mechanism transmits the drive force input from the air cylinder by rotary motion.

Attachment apparatus, test head, and electronic device test system

The present invention provides an apparatus for testing a device with a high frequency signal, such as an RF signal. The apparatus delivers a high frequency signal directly to a loadboard with a coaxial cable. The coaxial cable can deliver the signal to a location at or near the device on the loadboard. The cable can connect to the loadboard through a threaded connection. The other end of the cable can connect to a testing module or another cable. The apparatus can further comprise a section or housing between the circuit board and the testing module to provide support for the cables and their respective connections. The apparatus can further provide connections for both high frequency testing and low frequency testing.

Apparatus for testing a device with a high frequency signal

A semiconductor test system includes a semiconductor test apparatus for providing a test signal to a device under test and performing a test on the device under test, a performance board for electrically coupling the semiconductor test apparatus and the device under test and a conveyance apparatus for conveying the device under test to electrically couple the device under test to the performance board. The conveyance apparatus includes a box for containing the performance board therein and a conveyance arm for conveying the device under test in order to press the device under test to the performance board and pressing the performance board to an inner face of the box via the device under test, so that a rear face of the performance board is pressed to the box, wherein the rear face corresponds to a position to which the device under test is pressed.

Semiconductor test system

The module-type connector according to the present invention defines the connectable connectors with a rigid supporting plate which extends along the connecting direction in order to make it easy to properly fit a male connector to a female connector. In the module-type connector, the contacting portions of the contacts that are shifted in the separation direction of the corresponding terminal with which the contacting portions contact are almost uniformly distributed. Further, the male connector that receives a preliminary load from different levels in the direction so that opposing elastic contacting portions are widened by engaging between the first end portion of each contact within a housing and the different levels of the housing, has at least a protruding portion that protrudes from the contacting surface of the plurality of contacts toward the contacting surface thereof and that is provided between contacts.

Modular connector assembly

A metal material having a photocatalytic activity which comprises an anodized layer and a thin layer containing titanium oxide powder which are heat treated are sequentially laminated on the surface of a substrate comprising metal material including titanium. By anodically oxidizing the metal material including titanium, an anodized layer is formed on the surface thereof. A thin layer containing titanium oxide powder is further coated on this surface, and heat treatment is carried out before and/or after forming this thin layer containing titanium oxide powder.

Metal material having photocatalytic activity and method of

Photosensitive materials which comprise, on a conductive support, a layer structure having at least one layer. The at least one film is made of a cured film of a dispersion of a photoconductor in a binder polymer which has recurring units of the following general formula ##STR1## wherein each m is individually from 0 to 4, but at least one m is not 0, X.sub.1 and X.sub.2 are bromine atoms and n is an integer. The photoconductor may be X-type metal-free phthalocyanine or .tau.-type metal-free phthalocyanine dispersed partially in a molecular state and partially in a particulate state. Alternatively, combinations of carrier generation and carrier transport agents may be used. The layer structure is either a single-layer structure or a double-layer structure.

Photosensitive material for electrophotography comprising organic

A photosensitive material for electrophotography, comprises a support and, provided thereon, an organic photoconductive layer of single-layer structure comprising a mixture of a metal-free phthalocyanine and a binder organic compound; said binder organic compound being comprised of an isocyanate in which the isocyanate terminal has been blocked with a blocking agent. The present photosensitive material can achieve good sensitivity and charge characteristics and is suited for the positive charge system.

Electrophotographic element with blocked isocyanate binder

An electrochromic display device comprises a pair of first and second, opposed insulative substrates, a layer of electrochromic substance sandwiched between the substrates, a transparent display electrode on the first substrate, and a counter electrode on the second substrate. A dielectric layer analogous in pattern to the display electrode is formed on the counter electrode to improve the device's life time and eliminate interference between adjacent display electrodes.

Electrochromic display having a dielectric layer

A selective gas-permeable film comprising a crosslinked copolymer product of a bifunctional polyorganosiloxane and a mixture of a styrene polymer having an aromatic ring at the side chain thereof, a phenolic polymer having an aromatic ring at the main chain thereof or an addition polymer of a phenolic compound and a phenyl ether compound joined through methylene groups and a polymer having functional end hydroxyl groups. Alternatively, the copolymer product may be of the bifunctional polyorganosiloxane and the addition polymer alone.

Selective gas-permeable films

A high-temperature furnace comprising a gas burner (2) for burning a mixture of air and fuel in a combustion chamber (1), and an oxygen enricher (4). The enricher comprises a plurality of cells (13a) each comprising a pair of spaced apart oxygen permeable membranes (14), and a suction fan (12) for drawing air through the spaces between the cells (13a). The cells (13a) are coupled by a manifold (13b) to a vacuum pump (18) which causes the oxygen molecules of the air to pass through the membranes to increase the oxygen content of the air in the cells (13a), the oxygen-enriched air being drawn by the suction pump (18) to the burner (2). Preferably, a heat exchanger (31) is provided for transferring thermal energy of the emissions from the combustion chamber (1) to the air drawn by the suction fan (12) to maintain the oxygen concentration constant for a given operating condition of the combustion chamber.

High-temperature furnace having selectively permeable membranes for

In a process for heat treating titanium alloys, and .alpha.+.beta. titanium alloy, heated and held in a temperature range above 500.degree. C. and below the .alpha.+.beta./.beta. transformation point, and then quenched, is further aged at a low temperature in the range between 50.degree. and 300.degree. C.

Heat treatment of titanium alloys

Growing community of inventors

Tokyo, Japan

Yoshimasa Ito