Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Yoshimasa Horii

Wensheng Wang

Kazuaki Takai

Masaki Kurasawa

Katsuyoshi Matsuura

Ko Nakamura

Jeffrey Scott Cross

Tomohiro Takamatsu

Junichi Watanabe

Mineharu Tsukada

Aki Dote

Kenji Nomura

Alexei L Gruverman

Angus Kingon

Naoyuki Sato

Fan Chu

Glen Richard Fox

Brian Lee Eastep

Naoya Sashida

Shan Sun

Osamu Matsuura

Hideyuki Noshiro

Shigeyoshi Umemiya

Satoru Mihara

Masaaki Nakabayashi

Mitsushi Fujiki

Takeyasu Saito

Naoyuki Satoh

George Hickert

Soichiro Ozawa

Kou Nakamura

Mari Tani

There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3&#xb0; or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5&#xb0; or less, and a capacitor upper electrode.

Manufacturing method of a semiconductor device

To realize miniaturization/high integration and increase in the amount of accumulated charges, and to give a memory structure having a high reliability. A 1 transistor 1 capacitor (1T1C) structure having 1 ferroelectric capacitor structure and 1 selection transistor every memory cell is adopted, and respective capacitor structures are disposed respectively in either one layer of interlayer insulating films of 2 layers having different heights from the surface of a semiconductor substrate.

Semiconductor device and its manufacturing method

The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.

Semiconductor device having ferroelectric capacitor

Methods of making a ferroelectric memory device having improved interfacial characteristics

The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases.

Semiconductor device and manufacturing method of a semiconductor device

A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device

Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip

There are provided a step of forming an insulating film over a semiconductor substrate, a step of exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded and then irradiating the plasma onto the insulating film, a step of forming a self-orientation layer made of substance having a self-orientation characteristic on the insulating film, and a step of forming a first conductive film made of conductive substance having the self-orientation characteristic on the self-orientation layer.

Manufacturing method of semiconductor device

Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film

A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600&#xb0; C.

Method for fabricating semiconductor device

A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.

Semiconductor device having a ferroelectric capacitor and a fabrication process thereof

A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric dielectric material. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Deposition of the electrically conductive top electrode layer is followed by annealing the layer of ferroelectric dielectric material and the top electrode layer with a second anneal. The first and the second anneal are performed by rapid thermal annealing.

Process for producing high quality PZT films for ferroelectric memory integrated circuits

Growing community of inventors

Kawasaki, Japan

Yoshimasa Horii