Sharp Kabushiki Kaisha Corporation

Other

Sharp Kabushiki Kiasha

Yoshimasa Chikama

Yoshihiro Izumi

Okifumi Nakagawa

Masahiko Suzuki

Yoshiyuki Harumoto

Yoshifumi Ohta

Takeshi Hara

Hirohiko Nishiki

Michiko Takei

Tetsuya Aita

Yuuji Mizuno

Yoshihito Hara

Tetsuya Yamashita

Yukinobu Nakata

Yoshinobu Miyamoto

Tohru Okabe

Hisao Ochi

Jun Nishimura

Tokuo Yoshida

Masamitsu Yamanaka

Satoshi Kawashima

Takaharu Hashimoto

Go Mori

Tetsuo Fujita

Yoshiharu Hirata

Hiromitsu Katsui

Kazuo Nakagawa

Masaaki Ishikawa

Itsuji Yoshikawa

Tsuyoshi Inoue

Hajime Imai

Yohsuke Kanzaki

Tetsuya Okamoto

Hideki Kitagawa

Tohru Daitoh

Isao Ogasawara

Masaki Maeda

Teruyuki Ueda

Tetsunori Tanaka

Wataru Nakamura

Tatsuya Kawasaki

Yoshiki Nakatani

Yuichi Saito

Kenichi Kitoh

Yudai Takanishi

Yoshifumi Ota

Iwao Suzuki

Yuuiji Mizuno

Yoshiyuki Miyajima

Ryuji Matsumoto

Hirokazu Furukawa

A first substrate of a liquid crystal display device includes a plurality of gate wiring lines, a plurality of source wiring lines, a thin film transistor (TFT) provided in each of the pixels, a pixel electrode formed of a transparent conductive material and electrically connected to the TFT, a reflective electrode including a portion positioned in a reflective region, and a terminal portion disposed in a non-display region. The pixel electrode is formed in an upper layer above the reflective electrode, and the reflective electrode is not in contact with the pixel electrode. The terminal portion includes at least one of a first conductive layer formed in a same layer as that of the gate wiring lines and a second conductive layer formed in a same layer as that of the source wiring lines, and a third conductive layer formed in a same layer as that of the pixel electrode, and does not include a conductive layer formed in a same layer as that of the reflective electrode.

Liquid crystal display device and method for manufacturing same

An active matrix substrate includes a first TFT and a second TFT, each of TFTs includes an oxide semiconductor layer and a gate electrode arranged on a part of the oxide semiconductor layer with a gate insulating layer therebetween, in which in the first TFT, the oxide semiconductor layer, in a first region covered with the gate electrode with the gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, has a layered structure including a lower oxide semiconductor film and an upper oxide semiconductor film throughout and a mobility of the upper oxide semiconductor film is higher than a mobility of the lower oxide semiconductor film, and in the second TFT, in at least a part of a first region of the oxide semiconductor layer, of the lower oxide semiconductor film and the upper oxide semiconductor film, one oxide semiconductor film is provided, and another oxide semiconductor film is not provided.

Active matrix substrate and method for manufacturing same

A curved display panel including a display surface curving at least around a curve axis and displaying an image, the curved display panel includes a first substrate; a second substrate spaced apart from, and facing, the first substrate; a plurality of pixels provided to the first substrate, and arranged in a matrix inside the display surface; a light shield provided to the second substrate, extending in a curve direction of the display surface, and dividing the pixels adjacent to each other in an orthogonal-to-curve direction extending along the display surface and orthogonal to the curve direction; and an indicator provided to the second substrate, and serving as a position indicator of each of the pixels in the curve direction.

Curved display panel

An active matrix substrate includes TFTs, an interlayer insulating layer, a common electrode, a first dielectric layer, pixel electrodes, a second dielectric layer, and touch wirings, in which each of the pixel electrodes at least partially overlaps the common electrode via the first dielectric layer, so that an auxiliary capacitance including each of the pixel electrodes, the common electrode, and the first dielectric layer is formed, the touch sensor electrodes include a first electrode, the touch wirings include a first wiring and a second wiring in the touch sensor electrodes, the second wiring extends to the other electrode across the first electrode when viewed from a normal direction, and a portion of the second wiring overlaps the first electrode via the first and the second dielectric layers, so that a touch wiring capacitance including the second wiring, the first electrode, the first and the second dielectric layers is formed.

Active matrix substrate, liquid crystal display device with touch sensor using active matrix substrate, and method for manufacturing active matrix substrate

Provided is a touch-panel-equipped display device that can achieve a desired touch detection performance even if it has a large-size high-definition panel. The touch-panel-equipped display device of the present invention includes an active matrix substrate (). The active matrix substrate () includes, on a substrate (), a plurality of pixel electrodes, a plurality of counter electrodes (), and an insulating film () provided between the pixel electrodes and the counter electrodes (). The active matrix substrate () further includes a plurality of signal lines () each of which is connected with any one of the counter electrodes (), a plurality of switching elements that are connected with the pixel electrodes, respectively, and an organic insulating film () that is provided between the pixel electrodes and the signal lines () as well as the switching elements. The signal lines () are in contact with the substrate ().

Touch-panel-equipped display device

A display panel displaying an image includes a first substrate, a second substrate disposed opposite the first substrate, electric optical substance sealed between the first substrate and the second substrate, a transistor disposed on the first substrate and supplying an electric signal to the electric optical substance and including an oxide semiconductor film as an activating layer, and a light blocking film disposed on the second substrate and blocking visible light from transmitting therethrough, the light blocking film having a hole in a position overlapping the transistor in a plan view.

Display panel and display device

A substrate of the present invention sequentially includes an insulating substrate, a lower layer, a first insulating film, a second insulating film, and an upper layer. The substrate is provided with a hole reaching at least one of the lower layer or the insulating substrate through at least the first insulating film and the second insulating film. The first insulating film includes in a region with the hole a protrusion that protrudes from an end portion in contact with the first insulating film of the second insulating film. The substrate includes a stepwise structure including the protrusion and the end portion. The upper layer coats the stepwise structure. An upper surface portion of the first insulating film in a region with the protrusion and an upper surface portion of the first insulating film in a region below the end portion of the second insulating film are coplanar.

Substrate and method for producing substrate

Provided is an active matrix substrate () that includes multiple inspection TFTs (Q) that are arranged in a non-display area (), and an inspection circuit () that includes multiple inspection TFTs (Q). At least one or more of the multiple inspection TFTs (Q) are arranged within a semiconductor chip mounting area (R) in which a semiconductor chip is mounted. Each of the multiple inspection TFTs (Q) includes a semiconductor layer, a lower gate electrode (FG) that is positioned on a side of the substrate of the semiconductor layer with a gate insulation layer in between, an upper gate electrode (BG) that is positioned on a side opposite to the side of the substrate of the semiconductor layer with an insulation layer including a first insulation layer in between, and a source electrode and a drain electrode that are connected to the semiconductor layer.

Active matrix substrate and display device provided with active matrix substrate

A display device according to an aspect of the present invention includes a plurality of connection terminals and a plurality of lead lines, and the plurality of lead lines includes first lead lines, second lead lines, and third lead lines. Signal-line-side first lead lines are formed of a first conductive layer, signal-line-side second lead lines are formed of a second conductive layer, and signal-line-side third lead lines are formed of a third conductive layer. A lowest conductive layer of each switching element is formed of the second conductive layer. Among the plurality of lead lines, the connection-terminal-side first lead lines, the connection-terminal-side second lead lines, and the connection-terminal-side third lead lines are formed of conductive layers that include at least the third conductive layer but do not include the first conductive layer.

Display device

An active matrix substrate includes: first to third lines formed in first to third line layers, respectively, a signal different from a signal supplied to the first lines and the second lines being supplied to the third lines; first connection linesthat connect the first lines or the second lines with the first terminals; and second connection linesthat connect the third lines with the second terminals. One of two adjacent ones of the first connection lines is at least partially formed in one of the first line layer and the second line layer, and the other is at least partially formed in the other line layer. In areas that are in the sealing area and where the first connection lines and the second connection lines are superposed, the two of the first connection lines are at least partially superposed when viewed in a plan view.

A touch-panel-equipped display device includes an active matrix substrate, TFTs; a first insulating filmformed on a liquid crystal layer side with respect to the TFT; pixel electrodesprovided on a liquid crystal layer side with respect to the first insulating film; a second insulating filmprovided on a liquid crystal layer side with respect to the pixel electrodes; counter electrodesthat are formed on a liquid crystal layer side with respect to the second insulating film, the counter electrodes and the pixel electrodes having electrostatic capacitances therebetween; a control unit that detects a touch position by supplying a touch driving signal to the counter electrodes; and signal linesfor supplying the touch driving signal from the control unit to the counter electrodes. The signal lines are formed between the first insulating film and the second insulating film.

Touch-panel-equipped display device and method for manufacturing touch-panel-equipped display device

The present invention provides a circuit board having excellent productivity, particularly a circuit board having excellent productivity with respect to a semiconductor layer and source layer forming step, a display device, and a process for producing a circuit board. The circuit board of the present invention is a circuit board including an oxide semiconductor layer and an electrode connected to the oxide semiconductor layer, wherein the electrode is formed by essentially laminating a layer made of a metal other than copper and a layer containing copper.

Circuit board, display device, and process for production of circuit board

The present invention provides a thin film transistor substrate and a display device that prevent peeling. The thin film transistor substrate includes: an insulating substrate; a thin film transistor; a first inorganic insulating layer; an organic insulating layer stacked on the first inorganic insulating layer; and a second inorganic insulating layer stacked on the organic insulating layer. The organic insulating layer includes a side covered with the second inorganic insulating layer. The first inorganic insulating layer may contain silicon oxide. The organic insulating layer may contain photosensitive resin. The second inorganic insulating layer may contain silicon nitride.

Thin film transistor substrate and display device

A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets.

Thin film forming apparatus and thin film forming method

An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines () extending in one of directions in which the pixels are aligned and in parallel to each other, a plurality of TFTs (), one for each of the pixels, a protective film () covering the TFTs (), a plurality of pixel electrodes () arranged in a matrix on the protective film () and connected to the respective corresponding TFTs (), and a plurality of auxiliary capacitors (), one for each of the pixels. Each of the auxiliary capacitors () includes the corresponding capacitor line (), the corresponding pixel electrode (), and the protective film () between the corresponding capacitor line () and the corresponding pixel electrode ().

Active matrix substrate and liquid crystal display panel including the same, and method for manufacturing active matrix substrate with gate insulating film not provided where auxiliary capacitor is provided

Growing community of inventors

Osaka, Japan

Yoshimasa Chikama