Hamamatsu-photonics K.k.

Yoshimaro Fujii

Naoki Uchiyama

Kenshi Fukumitsu

Fumitsugu Fukuyo

Akira Sakamoto

Kouji Okamoto

Terumasa Nagano

Kazuhisa Yamamura

Kenichi Sato

Tomoya Taguchi

Ryutaro Tsuchiya

Yoshitaka Ishikawa

Hiroshi Oguri

Seiichiro Mizuno

Takashi Suzuki

Mitsuhito Mase

Tatsumi Yamanaka

Tomohiro Yamazaki

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substratehaving a front faceformed with functional deviceswith laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear faceof the semiconductor substrateafter the step of forming the starting point region for cutting such that the semiconductor substrateattains a predetermined thickness.

Substrate dividing method

Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

Detector, PET system and X-ray CT system

A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substratehaving a front faceformed with functional deviceswith laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear faceof the semiconductor substrateafter the step of forming the starting point region for cutting such that the semiconductor substrateattains a predetermined thickness.

A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions.

Manufacturing method for edge illuminated type photodiode and semiconductor wafer

A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.

Semiconductor light detecting element having silicon substrate and conductor

Growing community of inventors

Hamamatsu, Japan

Yoshimaro Fujii