Nuflare Technology, Inc.

Nuflare Technology America, Inc.

Yoshikuni Goshima

Hiroshi Matsumoto

Hirofumi Morita

Kazuyuki Higashi

Rodney A Kendall

Yoshiaki Shimooka

Victor Katsap

Hiroshi Yamashita

Hitomi Yamaguchi

Seiichi Tsuchiya

Kazuhiro Chiba

Yoshimasa Sanmiya

Chising Lai

Shinsuke Nabeya

Kei Obara

Akira Noma

Shiro Okada

John William Kay

Kentaro Mori

Miyoko Shimada

A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

Semiconductor device, multi-charged-particle beam writing apparatus, and multi-charged-particle beam exposure apparatus

In one embodiment, a multi-beam blanking device includes a semiconductor substrate, an insulating film that is disposed on the semiconductor substrate, an antistatic film that is disposed on the insulating film, a plurality of cells each of which is related to a through-hole that penetrate the semiconductor substrate and the insulating film and each of which includes a blanking electrode and a ground electrode that are disposed on the insulating film, and a ground wiring line that is disposed in the insulating film. The antistatic film and the ground wiring line are connected to each other at a joint that extends through the insulating film on the ground wiring line.

Multi-beam blanking device and multi-charged-particle-beam writing apparatus

An individual beam detector for multiple beams includes a thin film in which a passage hole smaller than a pitch between beams of multiple beams and larger than the diameter of a beam is formed and through which the multiple beams can penetrate, a support base to support the thin film in which an opening is formed under the region including the passage hole, and the width size of the opening is formed to have a temperature of the periphery of the passage hole higher than an evaporation temperature of impurities adhering to the periphery in the case that the thin film is irradiated with the multiple beams, and a sensor arranged, at the position away from the thin film by a distance based on which a detection target beam having passed the passage hole can be detected by the sensor as a detection value with contrast discernible.

Individual beam detector for multiple beams, multi-beam irradiation apparatus, and individual beam detection method for multiple beams

A semiconductor device according to an embodiment includes a semiconductor chip including a region having through holes; a substrate having a first opening larger than the region, the substrate containing a resin or a ceramic; a spacer provided between the semiconductor chip and the substrate, the spacer having a second opening larger than the region; a first bond provided between the semiconductor chip and the spacer; and a second bond provided between the spacer and the substrate.

Semiconductor device

Reflected and scattered electrons generated by emitting an electron beam onto a substrate are detected by a detecting unit. The product of the area (S) and the irradiation time (t) of the Nth shot in a predetermined measurement unit obtained from writing data is computed by a computing unit. The value obtained by accumulating an instructed equivalent value in the predetermined measurement unit and the value obtained by integrating the signal (D) from the detecting unit in the predetermined measurement unit are compared and determined by a comparing unit to determine whether or not abnormality occurs in the irradiation amount of the electron beam.

Pattern writing system and method and abnormality diagnosing method

A pattern writing system includes a plurality of control units configured to use different communication standards; a pattern writing unit configured to be controlled by the plurality of control units and write a pattern on a target object by using a charged particle beam; a storage unit configured to receive parameter information from an external slave computer and stores the parameter information; a first interface information circuit group configured to output a received parameter information to at least one of the plurality of control units in conformity with a communication standard on the at least one of plurality of control units; a main computer; and a second interface circuit group configured to receive a request from the main computer, input parameter information been setting in the plurality of control units without passing through the storage unit, convert communication standards of the parameter information input into a communication standard used by the main computer, and output the parameter information whose each communication standard is converted to the main computer.

Pattern writing system and parameters monitoring method for pattern writing apparatus

A method for inspecting a settling time of a deflection amplifier includes setting a settling time, performing shooting a plurality of times alternately to project two patterns of different types which are shaped by making a charged particle beam pass through a first and a second apertures while deflecting the charged particle beam by a deflector controlled by an output of a deflection amplifier which is driven based on the settling time having been set, measuring beam currents of the shooting, calculating an integral current of the beam currents measured, and calculating a difference between the integral current calculated and a reference integral current to output the difference.

Method for inspecting settling time of deflection amplifier, and method for judging failure of deflection amplifier

A digital-to-analog converter (DAC)/amplifier testing system for use in an electron-beam (e-beam) mask writer, the e-beam mask writer including a plurality of DAC/amplifier circuits to output analog voltage signals, each DAC/amplifier circuit having a first output terminal and a second output terminal, the first output terminals of the plurality of DAC/amplifier circuits being respectively coupled to deflection plates of the e-beam mask writer to provide the output analog voltages as deflection voltages, is provided. The testing system including a summation circuit to sum voltage signals and to output a summation signal indicating the sum of the received analog voltage signals and an analyzer circuit to digitize the summation signal and to detect to compare the digitized summation signal with an error tolerance range to detect whether at least one of the DAC/amplifier circuits is experiencing an operating error.

Growing community of inventors

Yokohama, Japan

Yoshikuni Goshima