Kabushiki Kaisha Toshiba

Yoshiko Tsuji

Mitsushi Ikeda

Michio Sato

Toshihiro Maki

Yoshiharu Fukasawa

Yasuo Kohsaka

Hisao Toeda

Tomomasa Ueda

Makoto Shibusawa

Masahiko Akiyama

Toshiyuki Oka

Atsushi Sugahara

Yoshifumi Ogawa

Yujiro Hara

Masaru Nikaido

Masaki Atsuta

Shoichi Kurauchi

Yoko Fukunaga

Momoko Takemura

A Mo&#x2014;W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo&#x2014;W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo&#x2014;W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo&#x2014;W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo&#x2014;W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo&#x2014;W wiring thin film to be produced with high repeatability.

Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film

A Mo&mdash;W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo&mdash;W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo&mdash;W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo&mdash;W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo&mdash;W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo&mdash;W wiring thin film to be produced with high repeatability.

Mo-W material for formation of wiring, Mo-W target and method for

The present invention provides a liquid crystal display device including a plurality of address wiring lines formed of an Mo--W alloy, a plurality of data wiring lines intersecting the address wiring lines, with insulating films interposed at intersection portions of the data wiring lines and the address wiring lines, display regions having pixel electrodes arranged respectively for the intersection portions, and a plurality of switching elements provided adjacent to the intersection portions and having control electrodes connected electrically to the address wiring lines, first main electrodes connected electrically to the data wiring liens, and second main electrodes connected electrically to the pixel electrodes.

Liquid crystal display device

The present invention discloses an electrode wiring material including at least one main element selected from the group consisting of Mo and W and an additional element selected from the group consisting of Kr and Xe in an amount of 0.0003 atomic % to 3 atomic %. The present invention further discloses an electrode wiring substrate including an electrode wiring formed on a glass substrate, wherein the electrode wiring is formed of at least one metal selected from the group consisting of Mo and W and the lattice constant of the electrode wiring material is almost equal to the lattice constant of the electrode wiring material in a bulk state.

Electrode-wiring material and electrode-wiring substrate using the same

The present invention includes a substrate for a display device and a liquid crystal display device using the same having a functional layer at least partially made of an organic-inorganic hybrid glass. The present invention includes a method of manufacturing a substrate for a display device having the steps of forming a switching element on a substrate, forming a polysilane layer on the substrate, irradiating ultraviolet light to the polysilane layer, to form a latent image for a pattern, dipping the substrate into a dipping solution so that a material of the dipping solution soaks into the exposed portion, vitrificating the exposed portion by heating. According to the method, a pattern having different regions in characteristics (insulating, conductive, and coloring) can be formed easily by changing in composition of the dipping solution.

LCD having an organic-inorganic hybrid glass functional layer

An active matrix type liquid crystal display device having an array substrate for allowing parasitic capacitances formed between a pixel electrode and scan and signal lines disposed in the vicinity thereof to be remarkably decreased. An active matrix type liquid crystal display device is disclosed, which comprises a plurality of scan lines, a plurality of signal lines intersected with the plurality of scan lines, the plurality of scan lines being insulated from the plurality of signal lines, a thin film transistor element having a gate portion and a drain portion and disposed at each intersection of the plurality of scan lines and the plurality of signal lines, the gate portion being connected to a scan line at the intersection, the drain portion being connected to a signal line at the intersection, an array substrate formed in the intersection and having a pixel electrode, the pixel electrode being electrically connected to the source portion of the thin film transistor element, an opposite substrate having an opposite electrode opposed to the array substrate, a liquid crystal layer disposed between the array substrate and the opposite substrate, and a shield electrode disposed on the array substrate, the shield electrode being overlaid through an insulation layer with at least part of the pixel electrode and with at least part of at least either the scan line or signal line.

Active matrix liquid crystal display device

An active matrix type liquid crystal display device having a plurality of scan lines, a plurality of signal lines intersected with the plurality of scan lines, the plurality of scan lines being insulated from the plurality of signal lines, a thin film transistor element having a gate portion and a drain portion and disposed at each intersection of the plurality of scan lines and the plurality of signal lines, the gate portion being connected to a scan line at the intersection, the drain portion being connected to a signal line at the intersection, an array substrate formed in the intersection and having a pixel electrode, the pixel electrode being electrically connected to the source portion of the thin film transistor element, an opposite substrate having an opposite electrode opposed to the array substrate, a liquid crystal layer disposed between the array substrate and the opposite substrate, and a shield electrode disposed on the array substrate, the shield electrode being overlaid through an insulation layer with at least part of the pixel electrode and with at least part of at least either the scan line or signal line.

Growing community of inventors

Kawasaki, Japan

Yoshiko Tsuji