Mitsubishi Electric Corporation

Yoshiko Tamada

Yasushi Nakayama

Junichi Nakashima

Shota Morisaki

Yukimasa Hayashida

Yoshitaka Naka

Seiji Oka

Hiroyuki Takagi

Yoshihiro Yamaguchi

Keisuke Kimura

Yukio Nakashima

Takeshi Horiguchi

Takayoshi Miki

Daisuke Oya

Ryutaro Date

Kenichi Morokuma

Ryo Tsuda

Yasushige Mukunoki

Shoichi Orita

Tetsuo Motomiya

Junichiro Ishikawa

Tetsu Negishi

Kenta Uchida

Kazuhiro Otsu

Yukihiko Wada

Chihiro Kawahara

Tomonobu Mihara

Naohiko Mitomi

Shotaro Yamamoto

A classification circuit generates first information for classifying an operating state of a power semiconductor element into one of a plurality of predetermined operating regions. A selector circuit generates second information for selecting a plurality of modes with different switching speeds, based on a user input. A characteristic control circuit stores a drive adjustment signal in advance for each of combinations of the operating regions and the modes and outputs the drive adjustment signal in a combination of one operating region and one mode that is selected in accordance with the first information and the second information. A gate drive circuit charges/discharges a gate at a charge rate and a discharge rate variably set in accordance with the drive adjustment signal from the characteristic control circuit, at the time of on/off of the power semiconductor element.

Drive control device for power semiconductor element, and power module

A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.

Parallel driving device and power conversion device

An increased accuracy in detecting deterioration of a semiconductor device can be achieved. A first metal pattern and a second metal pattern are connected to a controller. A bonding wire connects the first metal pattern and an emitter electrode. A linear conductor is connected between a first electrode pad and a second electrode pad. First bonding wires connect the first electrode pad and the second metal pattern. Second bonding wires connect the second electrode pad and the second metal pattern. The controller detects the deterioration of the semiconductor device when a potential difference between the first metal pattern and the second metal pattern is above a threshold.

Semiconductor device

An emitter interconnection connecting the emitter of a semiconductor switching element to a negative electrode is different in one or both of length and width from an emitter interconnection connecting the emitter of a semiconductor switching element to the negative electrode. At the time of switching, an induced electromotive force is generated at a gate control wire, or at a gate pattern, or at an emitter wire, by at least one of a current flowing through a positive electrode and a current flowing through the negative electrode, so as to reduce the difference between the emitter potential of the semiconductor switching element and the emitter potential of the semiconductor switching element caused by the difference.

Semiconductor module and power conversion apparatus

A short-circuit protection circuit for a self-arc-extinguishing type semiconductor element includes a first protection circuit and a second protection circuit. The first protection circuit is configured to reduce a voltage between a control electrode and a first main electrode of the self-arc-extinguishing type semiconductor element when detecting overcurrent flowing between the first main electrode and a second main electrode. The second protection circuit is configured to: detect current flowing in an interconnection adapted to supply the drive voltage; determine, based on the detected current, whether the first protection circuit is in an operating state; and change the drive voltage to turn off the self-arc-extinguishing type semiconductor element when the first protection circuit is in the operating state.

Short-circuit protection circuit for self-arc-extinguishing type semiconductor element

Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.

Semiconductor module and power conversion device

Gates of semiconductor switching elements are connected to a gate control wiring pattern. The gate control wiring pattern is further connected to a gate control terminal and a filter terminal which are connected by an element for forming a filter outside a housing. The filter terminal and the gate control terminal are connected to the gate control wiring pattern in such a manner that a section electrically connecting the filter terminal and the gate control terminal overlaps with at least a part of a section electrically connecting the gates of the semiconductor switching elements on the gate control wiring pattern.

Power semiconductor module and power semiconductor device

A power switching apparatus includes a plurality of semiconductor switching devices connected in parallel with each other and a plurality of balance resistor units. The plurality of balance resistor units each have one end connected to a control electrode of an associated semiconductor switching device and the other end to which a common control signal is input. Each balance resistor unit is configured to have a resistance value switched between different values depending on whether the plurality of semiconductor switching devices are turned on or turned off in accordance with the control signal.

Power switching apparatus

It is an object to provide a pressure-contact power semiconductor device and a power semiconductor core module which are capable of properly reducing their sizes. Each power semiconductor core module includes the following: a plurality of power semiconductor chips including a plurality of self-turn-off semiconductor elements and a plurality of diodes adjacent to each other in plan view; and a plurality of first springs disposed between an upper metal plate and a conductive cover plate. The plurality of self-turn-off semiconductor elements of each power semiconductor core module are arranged along any one of an L-shaped line, a cross-shaped line, and a T-shaped line in plan view.

Power semiconductor device and power semiconductor core module

A power semiconductor module including a positive-side switching device and a positive-side diode device which are mounted on a positive-side conductive pattern, and a negative-side switching device and a negative-side diode device which are mounted on an output-side conductive pattern. When an insulating substrate is viewed in plan view, the positive-side diode device and the negative-side diode device are disposed between the positive-side switching device and the negative-side switching device, and the negative-side diode device is disposed closer to the positive-side switching device than the positive-side diode device is.

Power semiconductor module

A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.

Power semiconductor element driving circuit

A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements and that are connected at a connection point between the self-arc-extinguishing type semiconductor elements; a positive-side DC electrode, a negative-side DC electrode, and an AC electrode that are connected to the positive arm and the negative arm; and a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side DC electrode, the negative-side DC electrode and the AC electrode. The positive-side DC electrode, the negative-side DC electrode, and the AC electrode are insulated from one another and arranged such that one of the electrodes faces each of the other two electrodes.

A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements, the positive arm and the negative arm being connected at a series connection point between the self-arc-extinguishing type semiconductor elements; a positive-side electrode, a negative-side electrode, and an AC electrode connected to the positive arm and the negative arm; and a substrate on which a plurality of wiring patterns are formed, the wiring patterns connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side electrode, the negative-side electrode, and the AC electrode. Respective directions of current flowing in adjacent wiring patterns are identical to each other, and one of the adjacent wiring patterns is arranged in mirror symmetry with the other of the adjacent wiring patterns.

A power semiconductor module includes a base plate as a metallic heat dissipating body, a first insulating layer on the base plate, and a first wiring pattern on the first insulating layer. On a predetermined region that is a part of the first wiring pattern, a second wiring pattern for a second layer is laminated via only a second insulating layer made of resin, thereby forming a pattern laminated region. A power semiconductor element is mounted in a region other than the pattern laminated region on the first wiring pattern. The base plate, the first insulating layer, the first wiring pattern, the second insulating layer, the second wiring pattern, and the power semiconductor element are integrally sealed with a transfer mold resin, thus obtaining the power semiconductor module.

Growing community of inventors

Chiyoda-ku, Japan

Yoshiko Tamada