Kabushiki Kaisha Toshiba

Yoshiko Kohanawa

Hisashi Kaneko

Masahiko Hasunuma

Atsuhito Sawabe

Shuichi Komatsu

Takashi Kawanoue

Satoru Murase

Keizo Shimamura

Hachio Shiraki

Shigeo Nakayama

The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.

Semiconductor device and method of manufacturing such semiconductor

Metal single crystal line having a particular crystal orientation

A composite member is prepared which comprises a core which will have a compound superconducting layer when heat-treated, and a stock for forming a stabilizing member made of copper and surrounding the core. The composite member is heat-treated in an oxidizing atmosphere, thus forming a copper-oxide thin layer on the surface of the stock. Thereafter, the composite member is heat-treated in a non-oxidizing atmosphere or in an atmosphere having an oxygen partial pressure which is too low to allow the forming of copper oxide. As a result, a compound superconducting wire is made which comprises a member including a compound superconductor, a diffusion-preventing layer made of oxide and surrounding the member, and a stabilizing member made of copper and surrounding the layer.

Compound superconducting wire and method of manufacturing the same

Growing community of inventors

Yokohama, Japan

Yoshiko Kohanawa