Kabushiki Kaisha Toshiba

Toshiba Energy Systems & Solutions Corporation

Kabuhsiki Kaisha Toshiba

Yoshiko Hiraoka

Mutsuki Yamazaki

Kazushige Yamamoto

Soichiro Shibasaki

Naoyuki Nakagawa

Yuya Honishi

Yukitami Mizuno

Sara Yoshio

Fumihiko Aiga

Reiko Yoshimura

Tsukasa Tada

Takashi Yoshida

Satoshi Itoh

Yasutaka Nishida

Naoharu Sugiyama

Tsutomu Tezuka

Kohei Nakayama

Atsushi Kurobe

Takeshi Niimoto

Miyuki Shiokawa

Seiji Imai

A solar cell according to an embodiment includes a first electrode being transparent, a first semiconductor layer on the first electrode, a second semiconductor layer on the first semiconductor layer, and a second electrode being transparent on the second semiconductor layer, wherein grooves exist regularly on a surface of the first semiconductor layer facing a side of the second semiconductor layer.

Solar cell, laminated body, multi-junction solar cell, solar cell module, and solar power generation system

A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and comprising a cuprous oxide, and an n-type layer comprising a first n-type layer, which is located between the p-type light-absorbing layer and the n-electrode and comprising a defined compound aiding in conversion efficiency. The n-type layer further comprises a second n-type layer which is located between the first n-type layer and the n-electrode and mainly contains another compound aiding in conversion efficiency.

Solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system

A solar cell of an embodiment includes a p-electrode; an n-electrode; a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide; and an n-type layer located between the first n-type layer and the n-electrode, the n-type layer including a first n-type layer and a second n-type layer or a first n-type region and a second n-type region; wherein the first n-type layer and the first n-type region is located on the p-type light-absorbing layer side, the second n-type layer and the second n-type region is located on the n-electrode side, the first n-type layer and the first n-type region mainly contain a compound represented by GaM1O, the M1 is one or more selected from the group consisting of Hf, Zr, In, Zn, Ti, Al, B, Sn, Si, and Ge, the x1, the x2, and the x3 are more than 0, and the x3 when a sum of the x1 and the x2 is 2 is 3.0 or more and 3.8 or less, the second n-type layer and the second n-type region mainly contain a compound represented by GaZnM2M3O, the M2 is one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Si, and Ge, the M3 is Sn or/and Mg, the y1, the y2, the y3, and the y4 are 0 or more, a sum of the y3 and the y4 is more than 0, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 is 2.2 or more and 3.6 or less.

A process for manufacturing a multilayered thin film, includes: forming a photovoltaic conversion layer, comprising CuO as a main component, on a first transparent electrode; and placing, under a first atmosphere at an oxygen level of from 5.0×10[g/L] to 5.0×10[g/L] for 1 h to 1600 h, a member having the photovoltaic conversion layer formed on the first transparent electrode.

Process for manufacturing multilayered thin film, method of manufacturing solar cell, and method for manufacturing solar cell module

A solar cell of an embodiment includes: a transparent substrate; a p-electrode on the substrate, the p-electrode including a first p-electrode containing an Sn-based metal oxide, a second p-electrode having an opening and consisting of a wiring containing a metal or graphene, and a third p-electrode containing an In-based metal oxide; a p-type light absorbing layer in direct contact with a surface of the first p-electrode on a side opposite to the second p-electrode side; an n-type layer provided on the p-type light absorbing layer; and an n-electrode provided on the n-type layer. The third p-electrode is provided to be present between the first p-electrode and the second p-electrode and to be in direct contact with an upper surface of the second p-electrode. An entire side surface of the second p-electrode is in direct contact with the first p-electrode.

A method for manufacturing a stacked thin film, includes forming a photoelectric conversion layer on a first transparent electrode by sputtering using a target mainly composed of copper in an oxygen containing atmosphere. An oxygen partial pressure of the sputtering is in a range of 0.01 [Pa] or more and 4.8 [Pa] or less, and 0.24&#xd7;d [Pa] or more and 2.4&#xd7;d [Pa] or less when a deposition rate is d [&#x3bc;m/min], in formation of the photoelectric conversion layer. A sputtering temperature is 300&#xb0; C. or more and 600&#xb0; C. or less, in formation of the photoelectric conversion layer.

Method for manufacturing stacked thin film, method for manufacturing solar cell, and method for manufacturing solar cell module

The photoelectric conversion layer of an embodiment is based on CuO, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.

Photoelectric conversion layer, solar cell, multi-junction solar cell, solar cell module, and photovoltaic power system

The solar cell of embodiments includes a transparent first electrode, a photoelectric conversion layer mainly containing cuprous oxide on the first electrode, an n-type layer on the photoelectric conversion layer, and a transparent second electrode on the n-type layer. A mixed region or/and a mixed layer are present on the n-type layer side of the photoelectric conversion layer, and the mixed region and the mixed layer contain elements belonging to a first group, a second group, and a third group. The first group is one or more elements selected from the group consisting of Zn and Sn, the second group is one or more elements selected from the group consisting of Y, Sc, V, Cr, Mn, Fe, Ni, Zr, B, Al, Ga, Nb, Mo, Ti, F, Cl, Br, and I, and the third group is one or more elements selected from the group consisting of Ge and Si.

Solar cell, multi-junction solar cell, solar cell module, and solar photovoltaic power generation system

A solar cell of an embodiment includes: a first electrode; a second electrode; a light-absorbing layer interposed between the first electrode and the second electrode; a dot region interposed between the first electrode and the light-absorbing layer, the dot region including dots.

Solar cell, multi-junction solar cell, solar cell module, and photovoltaic system

A solid catalyst having a close-packed structure has basic structural units present in the surface of the solid catalyst, the basic structural units including (i) a triangular lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the triangular lattice so that each atom of one of the elements adjoins atoms of the other elements or (ii) a rhombic lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the rhombic lattice in an atomic ratio of 1:2:1 so that each ruthenium atom directly adjoins a platinum atom and an atom of the additional element; and a fuel cell includes either of the solid catalyst as an anode-side electrode catalyst.

Solid catalysts and fuel cell employing the solid catalysts

A solid catalyst has a close-packed structure and has a first surface layer and a second surface layer, wherein the first surface layer includes platinum as a main component and the second surface layer contains PtX(wherein X is one element selected from the group consisting of Zr, Hf, Nb, Ta, Mo, and W; a+b=100; and 25&#x2266;b&#x2266;50); and a fuel cell includes the solid catalyst as an anode-side electrode catalyst.

A semiconductor device comprises a semiconductor substrate, a first semiconductor layer under compressive strain formed on the semiconductor substrate, a p-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in a predetermined region of the first semiconductor layer, a second semiconductor layer in a lattice-relaxation condition formed on the first semiconductor layer in a region other than the predetermined region with an insulating film lying therebetween, wherein the insulating film has an opening and the first and second semiconductor layers are connected through the opening, a third semiconductor layer under tensile strain formed on the second semiconductor layer, and an n-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in the third semiconductor layer.

Growing community of inventors

Kawasaki Kanagawa, Japan

Yoshiko Hiraoka