Sharp Kabushiki Kaisha Corporation

Yoshiki Nakatani

Yohsuke Kanzaki

Yudai Takanishi

Tetsuya Okamoto

Yuichi Kita

Takahiro Sasaki

Shigeru Aomori

Iori Aoyama

Kazutaka Hanaoka

Masao Moriguchi

Yuhichi Saitoh

Tsuyoshi Inoue

Kenji Nakanishi

Yoshihisa Takahashi

Yasuaki Iwase

Yoshimasa Chikama

Hisao Ochi

Mayuko Sakamoto

Akitsugu Hatano

Michiko Takei

Tetsuya Aita

Yuichi Saito

Takatsugu Kusumi

Takatomo Yoshioka

Tetsuo Fukaya

Kimihiko Yamada

Tomoko Maruyama

A liquid crystal display device () includes a first liquid crystal display panel () configured to be capable of taking a transparent displaying state and a second liquid crystal display panel (), such that the first liquid crystal display panel allows at least a portion of light going out of the second liquid crystal display panel to be transmitted in the transparent displaying state. The first liquid crystal display panel includes a first liquid crystal layer (L) interposed between a pair of substrates, and first and second polarizers (F,B) between which the first liquid crystal layer is interposed; the second liquid crystal display panel includes a second liquid crystal layer (L) interposed between a pair of substrates, and a third polarizer (F) placed on a side of the second liquid crystal layer that is closer to the first liquid crystal display panel; the second polarizer (B) of the first liquid crystal display panel is on a side closer to the second liquid crystal display panel; and a transmission axis of the second polarizer (B) and a transmission axis of the third polarizer (F) are not orthogonal.

Liquid crystal display device

A liquid crystal display device () includes a liquid crystal display panel () including a first substrate (), a second substrate (), and a liquid crystal layer (). The first substrate includes a first electrode () provided for each pixel, and a second electrode () for generating a lateral field across the liquid crystal layer in cooperation with the first electrode. The second substrate includes a third electrode () for generating a vertical field across the liquid crystal layer in cooperation with the first electrode and the second electrode. Each pixel is capable of switchably presenting a black displaying state where a vertical field is generated across the liquid crystal layer, a white displaying state where a lateral field is generated across the liquid crystal layer, and a transparent displaying state where a rear face side of the liquid crystal display panel is visible in a see-through manner with no voltage being applied to the liquid crystal layer. The first electrode includes a plurality of linear portions (), the plurality of linear portions being arranged so that at least one of the following exists in a plurality: the direction that the linear portions extend and the pitch of the linear portions.

A display device () includes: a display panel () capable of being in a transparent display state where a background scene is viewable through the display panel; a panel light source () that irradiates the display panel with colored light of a plurality of colors in a time division manner; a rear side light source () placed on a rear surface side of the display panel, the rear side light source being capable of emitting colored light of a plurality of colors in a time division manner; and a control circuit that controls emission timings of the colored light from the panel light source and from the rear side light source, wherein the panel light source and the rear side light source are synchronized by the control circuit such that colored light of different colors are not emitted at a same timing.

Display device

The present invention provides a circuit board having excellent productivity, particularly a circuit board having excellent productivity with respect to a semiconductor layer and source layer forming step, a display device, and a process for producing a circuit board. The circuit board of the present invention is a circuit board including an oxide semiconductor layer and an electrode connected to the oxide semiconductor layer, wherein the electrode is formed by essentially laminating a layer made of a metal other than copper and a layer containing copper.

Circuit board, display device, and process for production of circuit board

The present invention provides a liquid-crystal-driving method of driving liquid crystal by causing a potential difference between a pair of electrodes provided for one of upper and lower substrates, wherein a DC image sticking and a flicker are sufficiently reduced, and a liquid crystal display device driven by using the liquid-crystal-driving method. The present invention relates to a method of driving liquid crystal by causing a potential difference between a pair of electrodes provided for one of upper and lower substrates. In the liquid-crystal-driving method, a driving operation of driving liquid crystal by causing a potential between a pair of electrodes is executed. In the driving operation, the absolute value of a second offset voltage is larger than that of a first offset voltage.

Liquid-crystal-driving method and liquid crystal display device

A TFT substrate () includes a plurality of pixel electrodes () provided in a matrix, a plurality of TFTs () each provided for a corresponding one of the pixel electrodes (), and a plurality of auxiliary capacitors () each provided for a corresponding one of the pixel electrodes (). Each of the auxiliary capacitors () includes a capacitor line () made of a material identical to that of the gate electrode () of the TFT () and provided in a layer identical to that of the gate electrode () of the TFT (), the gate insulating film () provided so as to cover the capacitor line (), and a corresponding one of the pixel electrodes () provided on the gate insulating film () so as to overlap with the capacitor line () and being in conduction with a drain electrode ().

Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel

A TFTincludes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, a drain electrode, etc. The semiconductor layeris comprised of a metal oxide semiconductor (IGZO), and has a source portionthat contacts the source electrode, a drain electrodethat contacts the drain electrode, and a channel portionthat is located between the source and drain portions. A reduced regionis formed at least in the channel portionof the semiconductor layer, and the reduced regionhas a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer

Thin film transistor

Disclosed is a thin film transistor wherein an ON current is increased and a leak current is reduced. The channel layerof the TFTis formed of a crystalline silicon, and the lower surface of one end of the channel layeris electrically connected to the surface of an nsilicon layer, and the lower surface of the other end is electrically connected to the surface of an nsilicon layer. Furthermore, the side surface of said end of the channel layeris electrically connected to a source electrode, and the side surface of the other end is electrically connected to a drain electrode. Thus, a barrier that makes electrons, which act as carriers, not easily transferred is formed on the boundary between the source electrodeand the channel layer. As a result, the ON current that flows when the TFTis in the ON state can be increased, and the leak current that flows when the TFT is in the OFF state can be reduced.

Thin film transistor and display device

An auxiliary capacitor () includes a capacitor line (), a gate insulating film () provided so as to cover the capacitor line (), a semiconductor layer () provided on the gate insulating film () so as to overlap with the capacitor line (), and a drain electrode () provided on the semiconductor layer () and connected to a pixel electrode (). The semiconductor layer () made of an oxide semiconductor and the pixel electrode () made of an oxide conductor contact each other.

There is provided a display device capable of preventing a malfunction and a display defect due to an off-leak from occurring even when a circuit in a shift register is configured utilizing thin film transistors of relatively large off-leaks. In at least one embodiment, each of bistable circuits that constitute the shift register includes: a thin film transistor for increasing a potential of an output terminal based on a first clock; a thin film transistor for decreasing the potential of the output terminal; a thin film transistor for increasing a potential of a range netA connected to a gate terminal of the thin film transistor based on a start signal; thin film transistors for decreasing the potential of the range netA; a capacitor for increasing the potential of a range netB connected to a gate terminal of the thin film transistor; and a thin film transistor for decreasing the potential of the range netB.

Scanning signal line drive circuit, shift register and display device

The present invention aims at reducing an OFF current in a thin film transistor while maintaining an ON-state current. A TFT () includes a glass substrate () formed thereon with a source electrode () and a drain electrode () having their respective upper surfaces formed with n-type silicon layers () of microcrystalline silicon. Microcrystalline silicon regions () are formed respectively on the n-type silicon layers () while an amorphous silicon region () is formed on the glass substrate (), and these are covered by a microcrystalline silicon layer (). Therefore, ON-state current flows from the drain electrode (), through the microcrystalline silicon region (), the microcrystalline silicon layer () and the microcrystalline silicon region () in this order, and then to the source electrode (). Also, OFF current is limited by the amorphous silicon region ().

Thin film transistor and method for manufacturing the same

Substrate material processing equipment includes: a substrate material conveying section receiving a substrate material from a first line and conveying it to a second line; a first substrate material dividing section dividing the substrate material; a substrate material recovery section recovering the substrate material from its start edge formed by division; a substrate material supply section supplying a substrate material to an end edge of the substrate material which is formed by division; a first substrate material joining section joining the end edge of the substrate material to a start edge of the substrate material supplied from the substrate material supply section; a second substrate material dividing section provided between the substrate material supply section and the first substrate material joining section; a third substrate material dividing section provided between the first line and the substrate material recovery section; and a second substrate material joining section joining a start edge of the substrate material which is formed by division by the third substrate material dividing section to an end edge of the substrate material which is formed by division by the second substrate material dividing section.

Substrate material processing equipment and substrate material processing method using the same

A flexible substrate storage equipment of the present invention includes at least a pair of opposed members that constitute an outer frame of a storage equipment main body, wherein the pair of opposed members are disposed so as to maintain a predetermined interval to wedge a plurality of flexible substrates in between to hold them in a shape of a curve. As a result, a flexible substrate storage equipment for surely storing and holding a plastic substrate or other flexible substrate with a simple structure, and a storing method of such substrate can be realized.

Flexible substrate storage equipment and flexible substrate storing method

A thin film two-terminal element is formed by laminating a protruding portion of a second conductor layer on a first conductor layer via a nonlinear resistor layer. An insulator layer is positioned between the first conductor layer and the second conductor layer except a region to become the thin film two-terminal element. Therefore, the allowance of the relative position of the second conductor layer with respect to the first conductor layer and the nonlinear resistor layer is considerably large as compared with that of prior art, and it is possible to ensure a requisite alignment margin with respect to deformation of the substrate in the production process.

Liquid crystal display apparatus

A thin-film two-terminal element including first metal film functioning as a wiring layer and a first electrode, a first insulating film formed on the first electrode of the first metal film and having a non-linear resistance property, a second metal film formed on the first insulating film and functioning as a second electrode, and a third metal film formed in a wire layer portion of the first metal film and having a smaller stress and a smaller electrical resistance than the first metal film, and a thin-film two-terminal element including, on a resinous substrate as an insulative substrate, a first metal film functioning as a wiring layer and a first electrode, a first insulating film formed on the first electrode of the first metal film and having a non-linear resistance property, a second metal film formed on the first insulating film and functioning as a second electrode, and a second insulating film formed under the second metal film except on a portion thereof which electrically functions with the first electrode via the first insulating film.

Growing community of inventors

Osaka, Japan

Yoshiki Nakatani