Renesas Electronics Corporation

Yoshiki Maruyama

Kota Funayama

Masao Inoue

Keiichi Maekawa

Yasuhiro Takeda

Takumi Hasegawa

Kazutoshi Shiba

Hiroshi Uozaki

Shuichi Kudo

Akio Nishida

Tomoya Saito

Satoshi Iida

Yorinobu Kunimune

Shigeo Tokumitsu

Atsushi Yoshitomi

A method of manufacturing a semiconductor device includes: providing a substrate, forming a first opening, forming a first insulating layer, forming a second opening, embedding a conductive layer, forming a protective layer, and performing CMP. The substrate includes a semiconductor substrate and a semiconducting layer. The conductive layer is embedded in the second opening so that a gap along a thickness direction of the semiconducting layer is formed. The protective layer is formed in the second opening on at least a portion of a surfaces of the conductive layer. In the CMP step, a portion of the conductive layers formed outside the second opening is removed.

Semiconductor device and method of manufacturing the same

An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.

Method of manufacturing semiconductor device and semiconductor device

An improvement is achieved in the performance of a semiconductor device including a memory element. Over a semiconductor substrate, a gate electrode for the memory element is formed via an insulating film as a gate insulating film for the memory element. The insulating film includes first, second, third, fourth, and fifth insulating films in order of being apart from the substrate. The second insulating film has a charge storing function. The band gap of each of the first and third insulating films is larger than a band gap of the second insulating film. The band gap of the fourth insulating film is smaller than the band gap of the third insulating film. The band gap of the fifth insulating film is smaller than the band gap of the fourth insulating film.

Semiconductor memory incorporating insulating layers of progressively decreasing band gaps and method of manufacturing the same

To control a grain growth on laminated polysilicon films, a method of manufacturing a semiconductor device is provided. The method includes: forming a first polysilicon film () on a substrate (); forming an interlayer oxide layer () on a surface of the first polysilicon film (); forming a second polysilicon film () in contact with the interlayer oxide layer () above the first polysilicon film (); and performing annealing at a temperature higher than a film formation temperature of the first and second polysilicon films in a gas atmosphere containing nitrogen, after formation of the second polysilicon film ().

Semiconductor device and manufacturing method thereof

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Kanagawa, Japan

Yoshiki Maruyama