Fujifilm Corporation

The University of Tokyo

Yoshiki Maehara

Takashi Goto

Hideyuki Suzuki

Yoshihisa Usami

Yuichiro Itai

Seigo Nakamura

Junichi Takeya

Toshihiro Nakatani

Masayuki Hayashi

Daigo Sawaki

Takeshi Senga

Takehiro Kasahara

Takashi Komiyama

Kiyohiko Tsutsumi

Kyohei Ogawa

An organic thin film transistor comprises a base material, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode, and further comprises charge injection layers which are provided between the source electrode and a base material side layer of the source electrode and between the drain electrode and a base material side layer of the drain electrode and have a thickness that decreases in a direction opposite to a direction in which the source electrode and the drain electrode face each other on a side of the source electrode facing the drain electrode and a side of the drain electrode facing the source electrode, and is manufactured by scanning a metal layer with a laser so as to form the source electrode and the drain electrode, and dropwise-adding a solution which becomes the charge injection layers to a laser-scanned portion.

Organic thin film transistor and method for manufacturing organic thin film transistor

Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

Method of manufacturing film using alignment material

A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.

Manufacturing device of organic semiconductor film

A method of manufacturing an organic semiconductor film, including a step of moving a coating blade surface positioned to face a substrate surface in a first direction parallel to the substrate surface, while in contact with an organic semiconductor solution supplied to a portion between the blade surface and the substrate surface to form the organic semiconductor film in the first direction. The coating blade is disposed to have first and second gaps having different separation gap sizes with the substrate surface in a region where the blade surface and the organic semiconductor solution are in contact. The first gap is positioned on an upstream side of the first direction and the second gap, which is smaller than the first gap, is provided on a downstream side. A second gap size is a minimum distance between the substrate surface and the blade surface and is 40 &#x3bc;m or less.

Method of manufacturing organic semiconductor film

Provided are an air up type transistor which has high electrical connection reliability and high productivity, and is capable of exhibiting good transistor characteristics while achieving microfabrication, and a manufacturing method of a transistor. A semiconductor layer is formed on an upper surface of a support precursor layer which becomes a semiconductor layer support and then a part of the semiconductor layer is removed to form one or more opening portions from which the support precursor layer is exposed. Two etching protective layers are formed on the semiconductor layer such that the two etching protective layers are separated from each other and at least a part of the opening portion is positioned in a region between the two etching protective layers. A part of the support precursor layer is removed by bringing an etchant into contact with the support precursor layer through the plurality of opening portions, thereby forming a space at a position corresponding to a region between the two etching protective layers so as to form two semiconductor layer supports that are arranged with the space interposed therebetween.

Transistor and manufacturing method of transistor

A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 &#x3bc;m and an energy density of from 0.1 to 10 J/cmon the surface of the solution film before the solution film dries. An organic semiconductor film having good crystallinity can be formed by the method.

Method for forming organic semiconductor film

A photoelectric conversion element is provided and includes a photoelectric conversion portion which includes: a pair of electrodes including an electron-collecting electrode and a hole-collecting electrode; and a photoelectric conversion layer between the pair of electrodes. At least part of the photoelectric conversion layer includes a mixture layer of a p-type organic semiconductor and a fullerene, and a volume ratio of the fullerene to the p-type organic semiconductor in the photoelectric conversion layer is such that the volume ratio on a side of the electron-collecting electrode is smaller than the volume ratio on a side of the hole-collecting electrode.

P-type organic semiconductor/fullerene photoelectric conversion layer

A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.

Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope

A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.

Process of making a solid state imaging device

A solid state imaging device includes an array of pixels, each of the pixels includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; and a readout circuit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer have a difference of at least 1 eV, and the solid-state imaging device further includes a transparent partition wall between adjacent color filters of adjacent pixels of the array of pixels, the partition wall being made from a transparent material having a lower refractive index than a material forming the color filters.

Solid-state imaging device and process of making solid state imaging device

A photoelectric apparatus includes a substrate and an array of a plurality of pixels each having at least one photoelectric device including a lower electrode over the substrate, a photoelectric layer over the lower electrode, and an upper electrode over the photoelectric layer, the photoelectric apparatus further includes an electrically conductive partition between adjacent two of the pixels, the conductive partition being electrically connected with the upper electrode and a transparent insulating layer on the upper electrode, and the pixels is individually sealed in by the partition and the transparent insulating layer.

Photoelectric apparatus and imaging apparatus including the same

A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.

Photoelectric conversion element, solid-state image pickup device, and manufacturing method of the photoelectric conversion element

A solid state imaging device comprises: photoelectric conversion portions on or above a substrate; and color filters on or above the respective photoelectric conversion portions. Each of the photoelectric conversion portions comprises: a lower electrode on or above the substrate; a photoelectric conversion film on or above the lower electrode; and an upper electrode on or above the photoelectric conversion film. The device further comprises: a first inorganic material film that protects each of the photoelectric conversion portions, is formed by a first method and is above the upper electrode and below the color filters; a second inorganic material film that prevents characteristic deterioration of the photoelectric conversion portion caused by the first method, is formed by a second method and is between the upper electrode and the first inorganic material film; and a polymeric material film that enhances a function of the first inorganic material film and is on or above the first inorganic material film.

Solid state imaging device and fabrication method of solid state imaging device

A photoelectric conversion device including: a first electrode; a photoelectric conversion layer; and a second electrode, in this order, wherein the photoelectric conversion device further includes: a deterioration factor adsorptive and/or reactive layer which covers the first electrode, the photoelectric conversion layer and the second electrode and which has at least one of adsorptivity of adsorbing a deterioration factor and reactivity of reacting with the deterioration factor; and a passivation layer which covers the deterioration factor adsorptive and/or reactive layer to protect the first electrode, the photoelectric conversion layer and the second electrode.

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Kanagawa, Japan

Yoshiki Maehara