Kabushiki Kaisha Toshiba

Yoshiki Endo

Tatsuya Yamada

Kazuo Shimokawa

Osamu Usuda

Masahiro Urase

Ichiro Omura

Akio Nakagawa

Yusuke Kawaguchi

Koichi Nitta

Kenichi Matsushita

Kuniaki Konno

Yasuhiko Akaike

Takafumi Nakamura

Noriaki Yoshikawa

Taizo Tomioka

Eitaro Miyake

Katsufumi Kondo

Yasuhito Saito

Takashi Koyanagawa

Hiroshi Takei

Haruki Arai

Toshihisa Inoue

Morio Takahashi

Kazuhiko Kurahashi

Tomohiro Kawano

Taiki Miura

Masako Ooishi

Tomokazu Domon

Junichi Nakao

Hiroshi Fukuyoshi

An aspect of the present embodiment, there is provided a semiconductor device, including an insulating substrate, at least one semiconductor chip provided above the insulating substrate, a wiring terminal including a connection portion electrically connected to the semiconductor chip, a surrounding frame surrounding the semiconductor chip and the connection portion, an embedded material provided in the surrounding frame covering the semiconductor chip and the connection portion, and a pressing unit provided on a surface of the embedded material.

Semiconductor device

A semiconductor module comprises a mounting board. A plurality of power switching device chips are mounted on the mounting board by flip-chip bonding. The chip has an upper surface and a lower surface and is configured to face the upper surface toward the mounting board. A drive IC chip is mounted on the mounting board by flip-chip bonding. The drive IC chip is operative to drive gates of transistors formed in the plurality of power switching device chips. A plurality of heat sink members are located on the lower surfaces of the plurality of power switching device chips, respectively. A resinous member is provided to seal the plurality of power switching device chips and the drive IC chip in a single package.

Semiconductor module

For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

Semiconductor light emitting element having three side surfaces inclined to connect the top and bottom surfaces of the transparent substrate

Semiconductor light emitting device having angled side surface

A press-contact type semiconductor device comprises: a plurality of semiconductor elements each of which has a first main electrode and a control electrode and a second main electrode; a second common main power source plate having the semiconductor elements positioned on a front surface thereof and electrically connected to the second main electrodes; a first common main power source plate arranged on the front surfaces of the semiconductor elements and electrically connected to the first main electrodes; a common control signal/main current plate arranged between semiconductor elements and including at least control signal wiring layers and main current wiring layers; conductive connectors for electrically connecting at least the main current wiring layers and the first common maim power source plate; and conductive elastic members for electrically connecting the main current wiring layers or the first common main power source plate to the conductive connectors by elasticity.

Press-contact type semiconductor device

Growing community of inventors

Ibo-gun, Japan

Yoshiki Endo