Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Yoshiki Ebiko

Tomoyuki Hirano

Hideshi Abe

Yuki Miyanami

Kazufumi Watanabe

Yoshiaki Masuda

Tomoharu Ogita

Masanari Yamaguchi

Takuya Sano

Koji Neya

Fumihiko Koga

Sozo Yokogawa

Hayato Wakabayashi

Nobuhiro Kawai

Yuhi Yorikado

Suzunori Endo

Nobuo Nakamura

Atsuhiko Yamamoto

Takayuki Enomoto

Takeshi Yanagita

Harumi Ikeda

Itaru Oshiyama

Yasushi Tateshita

Nobuyuki Kuboi

Yoshio Goto

Hajime Yamagishi

Yusuke Moriyama

Hiromi Okazaki

Yusuke Takatsuka

Yutaro Komuro

The present technology relates to a light receiving element, a distance measurement module, and electronic equipment which are capable of reducing leakage of incident light to adjacent pixels. A light receiving element includes a semiconductor layer in which photodiodes performing photoelectric conversion of infrared rays are formed in units of pixels, and a wiring layer in which a transfer transistor reading charge generated by the photodiodes is formed, and an inter-pixel light shielding unit that shields the infrared rays is formed at a pixel boundary portion of the wiring layer. The present technology can be applied to, for example, a distance measurement module that measures a distance to a subject, and the like.

Light receiving element, distance measurement module, and electronic equipment

A light receiving element including: a semiconductor substrate; a photoelectric conversion unit (PD) in the semiconductor substrate that converts light into electric charges; a first electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; a first distribution gate on a front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the first electric charge accumulation unit; a second electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; and a second distribution gate on the front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the second electric charge accumulation unit, in which the first and second distribution gates each have a pair of buried gate portions.

Light receiving element and light receiving device

To provide a light receiving element including: a photoelectric conversion unit (PD) that is provided in a semiconductor substrate and converts light into a charge; a first charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit; a second charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit, in which each of the first and second charge accumulation units includes a stack of an electrode, a first insulating layer, and a semiconductor layer.

Light receiving element and light receiving apparatus

A first photodetector according to an embodiment of the present disclosure includes: a substrate having a first surface that serves as a light-receiving surface and a second surface opposed to the first surface, and including an uneven structure provided on the first surface and a light-receiving section that performs photoelectric conversion to generate electric charge corresponding to an amount of light reception for each pixel; a passivation film stacked on the first surface of the substrate; and a reflectance adjustment layer including a plurality of protrusions configuring the uneven structure and the passivation film embedded in a plurality of recesses configuring the uneven structure, and having a refractive index between the substrate and the passivation film.

Photodetector

Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Light receiving element, ranging module, and electronic apparatus

A distance measurement accuracy is improved. A solid-state imaging device according to an embodiment includes a pixel array part in which a plurality of pixels is arranged in a matrix, in which each of the pixels includes a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate a charge, a floating diffusion region that accumulates the charge, a plurality of transfer circuits that transfer the charge generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charge accumulated in the floating diffusion region to appear in a signal line.

Solid-state imaging device and distance measurement device

There is provided a solid-state imaging device that is capable of suppression of color mixing caused by a pixel for near-infrared light and securement of a saturation charge amount of a pixel for visible light where the pixels are formed in a same substrate. The solid-state imaging device includes: a substrate; first to third photoelectric conversion units; infrared absorbing filters; first to third color filters; a first element isolation unit between the first and second photoelectric conversion units; and a second element isolation unit disposed between the second and third photoelectric conversion units, in which a cross-sectional area of the first element isolation unit along a direction in which the first and second photoelectric conversion units are aligned is larger than a cross-sectional area of the second element isolation unit along a direction in which the second and third photoelectric conversion units are aligned.

Solid-state imaging device and electronic apparatus

In a light receiving device, a light receiving element includes a first photoelectric conversion unit (PD) that converts light into electric charges, a first electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, a first distribution gate, a second electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, and a second distribution gate, in which the first and second distribution gates are provided at positions axially symmetric to each other with respect to a first center axis extending so as to pass through the center of the first photoelectric conversion unit, in a direction intersecting the column direction at a predetermined angle, when viewed from above the semiconductor substrate.

Light receiving device

A sensor device according to the present technology includes a pixel that includes: a photoelectric conversion element that performs photoelectric conversion; a first charge holding unit and a second charge holding unit that hold charges accumulated in the photoelectric conversion element; a first transfer transistor that transfers the charges to the first charge holding unit; and a second transfer transistor that transfers the charges to the second charge holding unit. Each of the first and second transfer transistors includes a vertical transistor including a vertical gate electrode portion, and in each of the first and second transfer transistors, an oxide film thickness of an opposite side wall portion is made larger than an oxide film thickness of a transfer side wall portion, the opposite side wall portion being positioned on a side opposite to the transfer side wall portion that is a wall portion on a side facing a transfer path of the charges among side wall portions of the vertical gate electrode portion.

Sensor device

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Solid-state imaging device with uneven structures and method for manufacturing the same, and electronic apparatus

An enzyme sensor including a pair of electrodes, an electron transfer layer held between the pair of electrodes, and an electron generating capsule in which a membrane containing at least a substrate of an enzyme to be detected encloses at least one or more kinds of enzymes other than the enzyme to be detected, the electron generating capsule being in contact with the electron transfer layer.

Enzyme sensor and electronic device

The present technology relates to an imaging element and an imaging apparatus that can suppress color mixture. An imaging element includes a pixel array section including a plurality of pixels that photoelectrically converts incident light, the pixel including a first signal extraction section including an application electrode connected to a first drive line for application of voltage, and a suction electrode for detecting a signal carrier generated by the photoelectric conversion, and a second signal extraction section including an application electrode connected to a second drive line for application of voltage and a suction electrode, in which a distance from the first signal extraction section to the second signal extraction section shorter than a distance from the first signal extraction section of the predetermined pixel to the second signal extraction section of another pixel adjacent to the predetermined pixel. The present technology can be applied to an imaging apparatus.

Growing community of inventors

Kanagawa, Japan

Yoshiki Ebiko