Sharp Kabushiki Kaisha Corporation

Future Vision Inc.

Ishikawajima-harima Heavy Industries Co., Ltd.

Ishiwawajima-harima Heavy Industries Co., Ltd. & Sharp Kabushiki Kaisha

Yoshikazu Yoshimoto

Shigeo Nakajima

Tomonari Suzuki

Masaru Yoshida

Hiroshi Wada

Yoshiyuki Higashigaki

Toshio Inoguchi

Hideaki Tanaka

Yoshimitsu Tajima

Motoo Mohri

Michiyo Kasahara

Nobuhiro Yanagisawa

Yutaka Nagasawa

Yukihiro Iwasaki

Toshimitsu Hirai

Shinri Sakai

Atsushi Denda

Shoei Kataoka

Mitsuhiko Yoshikawa

Yoichi Noda

Eizo Ohno

The present invention provides a method for manufacturing a liquid crystal display device. In openings of a first light transmission type photosensitive resin formed on an insulating substrate, a gate electrode, a source line, and a pixel contact layer are prepared. On these components, a gate insulator, a semiconductor layer, an ohmic contact layer (n+ semiconductor layer) and a protective film are prepared. Further, in openings of a second light transmission type photosensitive resin, a source electrode, a drain electrode, and a pixel electrode are prepared. Also, the crossing portion connecting line formed at the opening of the second light transmission type photosensitive resin is, similarly to the source line or the gate line, made of baked silver produced by baking an ink containing silver fine particles plotted by ink jet process.

Method for manufacturing liquid crystal display device comprising a crossing portion connecting line and a light transmission type photosensitive resin having openings

The present invention provides a liquid crystal display device using a thin-film transistor, and the invention also provides a method for manufacturing the liquid crystal display device. In openings of a first light transmission type photosensitive resin formed on an insulating substrate, a gate electrode, a source line, and a pixel contact layer are prepared. On these components, a gate insulator, a semiconductor layer, an ohmic contact layer (n+ semiconductor layer) and a protective film are prepared. Further, in openings of a second light transmission type photosensitive resin, a source electrode, a drain electrode, and a pixel electrode are prepared. Also, the crossing portion connecting line formed at the opening of the second light transmission type photosensitive resin is, similarly to the source line or the gate line, made of baked silver produced by baking an ink containing silver fine particles plotted by ink jet process.

Liquid crystal display device comprising a crossing portion connecting line and a light transmission type photosensitive resin having openings

The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.

Liquid crystal display device and method for manufacturing the same

The present invention provides a technique, by which it is possible to obtain a liquid crystal display panel with high precision by forming very fine pattern of electroconductive film through linking of the areas with different widths, and it is also possible to reduce the number of processes. Like a wide-width electroconductive film and a narrow-width electroconductive film, most of the surface of an underlying film UW of a thin-film transistor substrate SUBis turned to lyophobic portion RA, and only the narrow-width gate electrode forming area is turned to lyophilic portion FA. An electroconductive ink is dropped evenly to the gate electrode forming area of the lyophilic portion FA, and a wide-width gate line is formed on the gate line forming area GLA of lyophobic portion RA by direct drawing of IJ. The film thickness of the ink films on the gate electrode forming area GTA and the gate line forming area GLA are controlled by adjusting a dropping amount of the ink on each area, and film thicknesses of these areas obtained on the liquid crystal display panel after baking are adjusted to be equal with each other.

Liquid crystal display panel manufacturing method and liquid crystal display panel

A method of manufacturing an active matrix substrate includes forming wiring lines each having a matrix pattern on a substrate such that a wiring line extending in any one of a first direction and a second direction is separated from another wiring line at an intersection; forming a laminated portion composed of an insulating layer and a semiconductor layer on a portion of the wiring line and the intersection; and forming a conductive layer electrically connecting the separated wiring line, and a pixel electrode electrically connected to the wiring line via the semiconductor layer on the laminated portion.

Method of manufacturing active matrix substrate, active matrix substrate, electro-optical device, and electronic apparatus

The object of the present invention is to provide an inspection apparatus for liquid crystal drive substrates that improves the inspection accuracy of liquid crystal drive substrates, judges defect type more accurately, and does not cause a decrease in throughput. In order to achieve this object, the present invention provides an inspection apparatus for liquid crystal drive substrates that discriminates defective pixels having an abnormal voltage and normal pixels having a normal voltage based on pixel voltage by arranging an electro-optical element plate in opposition to a liquid crystal drive substrate on which pixel electrodes are arranged in the form of a matrix, and calculating the actual voltage of each pixel electrode in the form of a pixel voltage based on the voltage image of the electro-optical element plate obtained by writing a prescribed voltage to the pixel electrodes, and on the electro-optical characteristics of the above electro-optical element plate, wherein the inspection apparatus comprises an image processing apparatus that an image processing apparatus that classifies pixel electrodes of defect candidates for each defect type by comparing said pixel voltage with a threshold value set for each defect type of pixel defect, and finally judges said pixel electrodes of defect candidates for each defect type as defective pixels of each defect type based on judgment conditions provided for each defect type.

Inspection apparatus for liquid crystal drive substrates

Inspection device for liquid crystal driving substrate

A method for preparing a graphite intercalation compound having a metal or a metal compound inserted between adjacent graphite layers, comprising simultaneously introducing a mixture of a vapor of both a hydrocarbon compound and an organo metallic compound together with a carrier gas into a reactor, and decomposing said hydrocarbon compound and said organo metallic compound on a single-crystalline substrate at a relatively low temperature.

Method for preparing a graphite intercalation compound having a metal or

A thermoelectric material is provided which consists of an oxide with a perovskite structure, wherein the oxide is of the formula (Ln.sub.1-x A.sub.x).sub.2 MO.sub.4 with 0.01.ltoreq.x.ltoreq.0.05, where Ln is a rare earth element, A is an alkali earth metal element, and M is a transition metal element. The thermoelectric material is particularly useful for Peltier cooling elements to produce low temperatures below room temperature.

Thermoelectric material

The disclosure is directed to a method for converting between heat energy and electric energy which is characterized in that a carbon intercalation compound is employed as a thermoelectric material by utilizing a temperature difference in a direction perpendicular to the structure of carbon layers, or a method for producing a light-heat converting material which is characterized in that a thin metallic layer like a translucent mirror is caused to adhere to the inner surface of a light transmissive hollow tube by pyrolytically decomposing at a temperature approximately below 1000.degree. C., with hydrocarbons being introduced into the hollow tube at the rate of a predetermined amount per hour.

Materials for thermoelectric and light-heat conversion

A method for preparing graphite intercalation compounds having metal or metal compounds. The method consists of the simultaneous thermal decomposition of two kinds of starting materials by a CVD (Chemical Vapor Deposition) method in which hydrocarbon as a source material for the host graphite and other organometal reagents or metal halides for guest metal species or metal compound are decomposed simultaneously in a reactor in order to intercalate the metal species or metal compound into carbon being deposited on the substrate.

Method for producing graphite intercalation compound

A graphite electrode includes a first step of a substrate a deposition layer of fine globular graphite particles on the substrate, and subsequently a metal film of an iron group element or an alloy thereof on the deposition layer, and then a graphite layer on the metal film to obtain the electrode.

Graphite electrode

A process for preparing a carbon electrode comprising the steps of subjecting a hydrocarbon to pyrolysis in vapor phase to form a pyrolytic carbon having a specific half-width in X-ray diffractogram, subjecting the pyrolytic carbon to be in lithium vapor to obtain a lithium-intercalated pyrolytic carbon and forming the carbon electrode by utilizing the lithium-intercalated pyrolytic carbon as an electrode material.

Process for preparing carbon electrode

A thermal CVD for the production of an electrode comprising a graphite composition as an active material is disclosed wherein the graphite composition is composed of high-crystalline graphite having interlayer spacings in the range of 0.3354 to 0.3400 nm and low-crystalline graphite having interlayer spacing in the range of 0.343 to 0.356 nm.

Growing community of inventors

Tenri, Japan

Yoshikazu Yoshimoto