Mitsui Chemicals, Inc.

Mitsui Petrochemical Industries, Ltd.

Yoshikazu Yamada

Tsuyoshi Fujimoto

Kiyofumi Muro

Atsushi Okubo

Yumi Naito

Satoru Okada

Shoji Ishizaka

Yasuo Oeda

Takeshi Koiso

Kouichi Igarashi

Yuji Yoshida

On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x&equals;0.07, thickness t&equals;2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t&equals;0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x&equals;0.40, t&equals;0.03 &mgr;m), an active layer (composed of an In Ga As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x&equals;0.40, t&equals;0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t&equals;0.49 &mgr;m), a p-type cladding layer (AlGaAs, x&equals;0.20, t&equals;1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

Semiconductor laser apparatus

Method of fabricating semiconductor laser using selective growth

Semiconductor laser device

To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6&lt;y&lt;1.0), and the carrier blocking layers are made of a material having a wider band gap and a lower refractive index than the material of the waveguide layers.

A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.

Semiconductor laser element and laser device using the same element

Growing community of inventors

Sodegaura, Japan

Yoshikazu Yamada