Fuji Electric Co., Ltd.

Oki Electric Industry Co., Ltd.

Japan Atomic Energy Research Institute

Zaidan Hojin Biseibutsu Kagaku Kenkyu Kai

Oki Semiconductor Co., Ltd.

Hitachi, Ltd.

Nec Corporation

Kyocera Corporation

The University of Tokyo

Sumitomo Electric Industries, Limited

The Furukawa Electric Co., Ltd.

Canon U.s.a., Inc.

Hitachi Microcomputer Engineering, Ltd.

Fuji Electric Systems Co. Ltd.

Sony Computer Entertainment Inc.

Yoshikazu Takahashi

Yoshinari Ikeda

Tomio Takeuchi

Masami Suzuki

Masaru Kimura

Akira Morozumi

Masataka Nishi

Toshinari Ando

Susumu Shimamoto

Shin Soyano

Eiji Mochizuki

Hiroshi Naganawa

Motohito Hori

Yoshitaka Nishimura

Katsuya Okumura

Kenji Suzuki

Masa Hamada

Hiromichi Gohara

Tsunehiro Nakajima

Takafumi Yamada

Yasuhiko Muraoka

Takashi Ohsumi

Kuniaki Tatsuta

Norihiro Nashida

Hamao Umezawa

Isao Takahashi

Hiroshi Tsuji

Nobuo Sasaki

Ryoichi Kato

Masatoshi Abe

Katsuzo Aihara

Shin Fukuda

Masaaki Ogino

Daishiro Ikeda

Shinichi Honda

Naofumi Tada

Takashi Toyoda

Tetsuya Inaba

Kaname Kobayashi

Kazunori Takenouchi

Katsuhiko Yanagawa

Tetsuo Akiyama

Kazuaki Yamazaki

Masafumi Matsuo

Takashi Saito

Munekazu Iinuma

Yuichi Yamada

Hamao Umezawa, Deceased

Yusuke Wataya

Kuniteru Mihara

Hye-Sook Kim

Ryoichi Matsuda

Kaoru Yamanoue

Eisuke Tada

Fumiaki Kirihata

Hideo Nakajima

Masataka Shiozuka

Kiyoshi Sato

Yoshiaki Nonomura

Atsushi Nishida

Hideaki Kakiki

Keita Nakamura

Makoto Takechi

Akira Wagatsuma

Toshinari Andoh

Akira Ishihara

Yoshihiko Shindoh

Ikuo Itoh

Kazunaga Ohnishi

Shohei Sakuda

Ikuko Kurata

Hiroomi Watabe

Tsuneo Itoh

Katuhiro Endo

A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

Semiconductor device and method of manufacturing semiconductor device

A MOS gate structure including a p base region, a p epitaxial layer, an nsource region, a pcontact region, an n inversion region, a gate insulating film, and a gate electrode and a front surface electrode are provided on the front surface of an epitaxial substrate obtained by depositing an nepitaxial layer on the front surface of a SiC substrate. A first metal film is provided on the front surface electrode so as to cover 10% or more, preferably, 60% to 90%, of an entire upper surface of the front surface electrode. The SiC-MOSFET is manufactured by forming a rear surface electrode, forming the first metal film on the surface of the front surface electrode, and annealing in a Natmosphere. According to this structure, it is possible to suppress a reduction in gate threshold voltage in a semiconductor device using a SiC semiconductor.

Semiconductor device and semiconductor device manufacturing method

A power semiconductor module includes a cooler; a plurality of power semiconductor units fixed on the cooler; and a bus bar unit connected electrically to the plurality of power semiconductor units. Each of the plurality of power semiconductor units includes a multilayered substrate including a circuit plate, an insulating plate, and a metal plate laminated in respective order; a semiconductor element fixed to the circuit plate; a wiring member having a printed circuit board and a plurality of conductive posts; external terminals connected electrically and mechanically to the circuit plate; and an insulating sealing material. The bus bar unit includes a plurality of bus bars mutually connecting the external terminals of the plurality of power semiconductor units.

Power semiconductor module

A semiconductor device manufacturing method, sequentially includes a semiconductor element preparation step of preparing a first semiconductor element on which is formed a plurality of metal electrodes, a step of covering a surface of the first semiconductor element on which the metal electrode is not formed with a first insulating member, and a step of forming a second metal layer that conductively connects the metal electrode of the first semiconductor element and a first metal layer on an insulated circuit substrate across the second insulating member.

Semiconductor device manufacturing method

A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit includes copper blocks, an insulating substrate with a conductive pattern, an IGBT chip, a diode chip, a collector terminal pin, implant pins fixed to the chips by solder, a printed circuit board having the implant pins fixed thereto, an emitter terminal pin, a control terminal pin, a collector terminal pin, and a resin case having the above-mentioned components sealed therein. The copper blocks make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units can be combined with an inter-unit wiring board to form any circuit.

Unit for semiconductor device

Provided are a semiconductor device manufacturing method and semiconductor device such that manufacturing can be simplified and the thickness of the semiconductor device can be reduced. The semiconductor device includes an insulated circuit substrate having on one main surface thereof a first metal layer and a second metal layer, a metal plate conductively connected to the first metal layer, a first semiconductor element including on front and rear surfaces thereof a plurality of metal electrodes, a first insulating member disposed on a side surface of the first semiconductor element, a second insulating member disposed on the first insulating member and on the first semiconductor element, and a third metal layer, in which at least one portion thereof is disposed on the second insulating member and which conductively connects the metal electrode of the first semiconductor element and the second metal layer on the insulated circuit substrate.

In a semiconductor device, an insulated substrate is bonded with a cooling body with lowered thermal resistance without a holding unit. The semiconductor device includes an insulated substrate where a wiring pattern copper plate unit for forming a plurality of wiring patterns is disposed on one side of an insulating plate unit, and a heat radiation copper plate unit disposed on the other side of the insulating plate unit; a semiconductor chip mounted on the wiring pattern copper plate unit; a cooling body contacted with the heat radiation copper plate unit; and a wiring conductor plate connected between the semiconductor chip and the wiring pattern copper plate unit. The heat radiation copper plate unit and the cooling body are bonded with a metal sintered material, and thicknesses of the wiring pattern copper plate unit and the heat radiation copper plate unit are set to such thermal stress is relaxed.

Semiconductor device

A method for generating custom postscript printer description files, the method including obtaining paper type information, obtaining an original postscript printer description file, converting the paper type information into a postscript printer description format, inserting the converted paper type information into the original postscript printer description file to create a custom postscript printer description file, and storing the custom postscript printer definition file.

Custom paper information converter

A readthrough inducing agent for inducing readthrough of a premature stop codon generated by nonsense mutations, the readthrough inducing agent comprising a compound having a structure expressed by the following Structural Formula (A), and a drug for treating a genetic disease caused by nonsense mutations, the drug comprising the readthrough inducing agent. 

Readthrough inducing agent and drug for treating genetic disease caused by nonsense mutation

A method for producing a semiconductor device includes solder-connecting a semiconductor chip, onto an insulating substrate including a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder; warping a radiating base such that a surface of the radiating base on a side opposite to the insulating substrate is convex; and solder-connecting the insulating substrate onto the warped radiating base with the lead-free solder so as to provide a substantially flat solder-connected radiating base.

Method for producing semiconductor device

A power semiconductor module is equipped with: a frame made of an insulator; a first electrode plate made of a metal and fixed to a bottom opening of the frame; semiconductor chips electrically and physically connected to the first electrode plate; a multilayer substrate fixed to a principal surface of the first electrode plate; wiring members that electrically connect front surface electrodes of the semiconductor chips and a circuit plate of the multilayer substrate; a second electrode plate fixed to a top opening of the frame; and a metal block that has a first surface having a projected portion and a second surface disposed on a side opposite to the first surface and that is tapered from the first surface to the second surface, the projected portion being electrically and physically connected to the circuit plate of the multilayer substrate and the second surface being electrically and physically connected to the second electrode plate.

A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.

A quarantine network systemquarantines terminalsandconnected to a network via a wireless communication. The quarantine network systemis provided with an access pointfor a business NW used for connection to a business network, an access pointfor a quarantine NW which is used for connection to a network for quarantining and restricts the number of terminals connectable thereto, and an NW switching performance servertransmitting to the terminal a command which makes the terminal switch SSID of an access point which the terminal uses for wireless communication, in accordance with the situation.

Quarantine network system, server apparatus, and program

A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit () includes copper blocks (), an insulating substrate () with a conductive pattern, an IGBT chip (), a diode chip (), a collector terminal pin (), implant pins () fixed to the chips () by solder (), a printed circuit board () having the implant pins () fixed thereto, an emitter terminal pin (), a control terminal pin (), a collector terminal pin (), and a resin case () having the above-mentioned components sealed therein. The copper blocks () make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units () can be combined with an inter-unit wiring board to form any circuit.

Unit for semiconductor device and semiconductor device

A switching hub, system and method for restricting a communication between terminals within a second network isolated form a first network. The terminals are connected to the first network or the second network, wherein a terminal with sufficient security level is connected to the first network and a terminal with insufficient security level is connected to the second network. And a communication between the terminals within the second network is restricted.

Switching hub, a system, a method of the switching hub and a program thereof

Growing community of inventors

Tokyo, Japan

Yoshikazu Takahashi