Tohoku University

Yoshikazu Takahashi

Tetsuo Endoh

Shuji Katoh

A power semiconductor device includes a power semiconductor chip and a fourth electrode. The power semiconductor chip has a first surface and a second surface opposite to each other and includes a first electrode and a second electrode on the first surface thereof, and a third electrode on the second surface thereof. The first electrode is provided in a main cell area of the first surface. The fourth electrode is provided on the first surface of the power semiconductor chip, is electrically connected to the first electrode, and has an overhanging portion that extends outwardly from an outer edge of the power semiconductor chip.

Power semiconductor device and power semiconductor module each having electrodes on opposing surfaces of power semiconductor chip

The present invention provides an electric power conversion device and an electric power generation system which are capable of suppressing ripples in a detected voltage and detection delay.

Growing community of inventors

Miyagi, Japan

Yoshikazu Takahashi